JPS6293970A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6293970A
JPS6293970A JP60234817A JP23481785A JPS6293970A JP S6293970 A JPS6293970 A JP S6293970A JP 60234817 A JP60234817 A JP 60234817A JP 23481785 A JP23481785 A JP 23481785A JP S6293970 A JPS6293970 A JP S6293970A
Authority
JP
Japan
Prior art keywords
electrode wiring
wiring layer
contact
region
convex portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60234817A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0255953B2 (enrdf_load_stackoverflow
Inventor
Hirobumi Mishiro
三代　博文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60234817A priority Critical patent/JPS6293970A/ja
Publication of JPS6293970A publication Critical patent/JPS6293970A/ja
Publication of JPH0255953B2 publication Critical patent/JPH0255953B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP60234817A 1985-10-21 1985-10-21 半導体装置 Granted JPS6293970A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60234817A JPS6293970A (ja) 1985-10-21 1985-10-21 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60234817A JPS6293970A (ja) 1985-10-21 1985-10-21 半導体装置

Publications (2)

Publication Number Publication Date
JPS6293970A true JPS6293970A (ja) 1987-04-30
JPH0255953B2 JPH0255953B2 (enrdf_load_stackoverflow) 1990-11-28

Family

ID=16976847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60234817A Granted JPS6293970A (ja) 1985-10-21 1985-10-21 半導体装置

Country Status (1)

Country Link
JP (1) JPS6293970A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008527704A (ja) * 2005-01-06 2008-07-24 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 薄膜トランジスタアレイデバイス
JP2009016686A (ja) * 2007-07-06 2009-01-22 Toshiba Corp 高周波用トランジスタ
WO2009022509A1 (ja) * 2007-08-10 2009-02-19 Mitsumi Electric Co., Ltd. Ｍｏｓトランジスタ及びこれを用いた半導体集積回路装置
WO2010070824A1 (ja) * 2008-12-19 2010-06-24 株式会社アドバンテスト 半導体装置、半導体装置の製造方法およびスイッチ回路

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008527704A (ja) * 2005-01-06 2008-07-24 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 薄膜トランジスタアレイデバイス
JP2009016686A (ja) * 2007-07-06 2009-01-22 Toshiba Corp 高周波用トランジスタ
WO2009022509A1 (ja) * 2007-08-10 2009-02-19 Mitsumi Electric Co., Ltd. Ｍｏｓトランジスタ及びこれを用いた半導体集積回路装置
JP2009044085A (ja) * 2007-08-10 2009-02-26 Mitsumi Electric Co Ltd Ｍｏｓトランジスタ及びこれを用いた半導体集積回路装置
WO2010070824A1 (ja) * 2008-12-19 2010-06-24 株式会社アドバンテスト 半導体装置、半導体装置の製造方法およびスイッチ回路
US8466566B2 (en) 2008-12-19 2013-06-18 Advantest Corporation Semiconductor device, method for manufacturing of semiconductor device, and switching circuit
TWI416704B (zh) * 2008-12-19 2013-11-21 Advantest Corp 半導體裝置、半導體裝置的製造方法以及切換電路
JP5656644B2 (ja) * 2008-12-19 2015-01-21 株式会社アドバンテスト 半導体装置、半導体装置の製造方法およびスイッチ回路

Also Published As

Publication number Publication date
JPH0255953B2 (enrdf_load_stackoverflow) 1990-11-28

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