JPS6278829A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS6278829A JPS6278829A JP21938685A JP21938685A JPS6278829A JP S6278829 A JPS6278829 A JP S6278829A JP 21938685 A JP21938685 A JP 21938685A JP 21938685 A JP21938685 A JP 21938685A JP S6278829 A JPS6278829 A JP S6278829A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating film
- semiconductor substrate
- epitaxial growth
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000010410 layer Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 9
- 239000002344 surface layer Substances 0.000 claims abstract description 6
- 238000005498 polishing Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 241000238557 Decapoda Species 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Landscapes
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21938685A JPS6278829A (ja) | 1985-09-30 | 1985-09-30 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21938685A JPS6278829A (ja) | 1985-09-30 | 1985-09-30 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6278829A true JPS6278829A (ja) | 1987-04-11 |
| JPH0413852B2 JPH0413852B2 (enrdf_load_stackoverflow) | 1992-03-11 |
Family
ID=16734603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21938685A Granted JPS6278829A (ja) | 1985-09-30 | 1985-09-30 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6278829A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0234924A (ja) * | 1988-07-25 | 1990-02-05 | Matsushita Electron Corp | 半導体装置の製造方法 |
| JPH02268425A (ja) * | 1989-04-10 | 1990-11-02 | Toshiba Corp | 半導体装置の製造方法 |
| US6902988B2 (en) | 1999-08-20 | 2005-06-07 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Method for treating substrates for microelectronics and substrates obtained by said method |
-
1985
- 1985-09-30 JP JP21938685A patent/JPS6278829A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0234924A (ja) * | 1988-07-25 | 1990-02-05 | Matsushita Electron Corp | 半導体装置の製造方法 |
| JPH02268425A (ja) * | 1989-04-10 | 1990-11-02 | Toshiba Corp | 半導体装置の製造方法 |
| US6902988B2 (en) | 1999-08-20 | 2005-06-07 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Method for treating substrates for microelectronics and substrates obtained by said method |
| US7235427B2 (en) | 1999-08-20 | 2007-06-26 | S.O.I.Tec Silicon On Insulator Technologies | Method for treating substrates for microelectronics and substrates obtained by said method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0413852B2 (enrdf_load_stackoverflow) | 1992-03-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |