JPH0413852B2 - - Google Patents

Info

Publication number
JPH0413852B2
JPH0413852B2 JP21938685A JP21938685A JPH0413852B2 JP H0413852 B2 JPH0413852 B2 JP H0413852B2 JP 21938685 A JP21938685 A JP 21938685A JP 21938685 A JP21938685 A JP 21938685A JP H0413852 B2 JPH0413852 B2 JP H0413852B2
Authority
JP
Japan
Prior art keywords
layer
epitaxial growth
semiconductor substrate
growth layer
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP21938685A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6278829A (ja
Inventor
Toshiaki Ogawa
Kyoshi Sakagami
Shuji Nakao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP21938685A priority Critical patent/JPS6278829A/ja
Publication of JPS6278829A publication Critical patent/JPS6278829A/ja
Publication of JPH0413852B2 publication Critical patent/JPH0413852B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
JP21938685A 1985-09-30 1985-09-30 半導体装置の製造方法 Granted JPS6278829A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21938685A JPS6278829A (ja) 1985-09-30 1985-09-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21938685A JPS6278829A (ja) 1985-09-30 1985-09-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6278829A JPS6278829A (ja) 1987-04-11
JPH0413852B2 true JPH0413852B2 (enrdf_load_stackoverflow) 1992-03-11

Family

ID=16734603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21938685A Granted JPS6278829A (ja) 1985-09-30 1985-09-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6278829A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0234924A (ja) * 1988-07-25 1990-02-05 Matsushita Electron Corp 半導体装置の製造方法
JP2726488B2 (ja) * 1989-04-10 1998-03-11 株式会社東芝 半導体装置の製造方法
FR2797714B1 (fr) 1999-08-20 2001-10-26 Soitec Silicon On Insulator Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede

Also Published As

Publication number Publication date
JPS6278829A (ja) 1987-04-11

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees