JPH0158660B2 - - Google Patents
Info
- Publication number
- JPH0158660B2 JPH0158660B2 JP18840484A JP18840484A JPH0158660B2 JP H0158660 B2 JPH0158660 B2 JP H0158660B2 JP 18840484 A JP18840484 A JP 18840484A JP 18840484 A JP18840484 A JP 18840484A JP H0158660 B2 JPH0158660 B2 JP H0158660B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- epitaxial layer
- silicon
- film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 238000002955 isolation Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18840484A JPS6165449A (ja) | 1984-09-07 | 1984-09-07 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18840484A JPS6165449A (ja) | 1984-09-07 | 1984-09-07 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6165449A JPS6165449A (ja) | 1986-04-04 |
| JPH0158660B2 true JPH0158660B2 (enrdf_load_stackoverflow) | 1989-12-13 |
Family
ID=16223050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18840484A Granted JPS6165449A (ja) | 1984-09-07 | 1984-09-07 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6165449A (enrdf_load_stackoverflow) |
-
1984
- 1984-09-07 JP JP18840484A patent/JPS6165449A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6165449A (ja) | 1986-04-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH07326664A (ja) | ウエハの誘電体分離溝の充填方法 | |
| JPS6175540A (ja) | 集積回路の製法 | |
| JPH0158660B2 (enrdf_load_stackoverflow) | ||
| JPS59232437A (ja) | 半導体装置の製造方法 | |
| JPS5812732B2 (ja) | 半導体装置の製法 | |
| JPS618944A (ja) | 半導体装置およびその製造方法 | |
| KR100402101B1 (ko) | 반도체 소자의 제조방법 | |
| JPH02205339A (ja) | 半導体装置の製造方法 | |
| JPS6362252A (ja) | 誘電体絶縁分離基板の製造方法 | |
| JPS63292645A (ja) | 半導体装置のトレンチアイソレ−ション形成方法 | |
| JPH0413852B2 (enrdf_load_stackoverflow) | ||
| JPS6165447A (ja) | 半導体装置の製造方法 | |
| JPH0212942A (ja) | 半導体装置の製造方法 | |
| JPH02205340A (ja) | 半導体装置の製造方法 | |
| JPH0258848A (ja) | 半導体装置の製造方法 | |
| JPS63197331A (ja) | 半導体装置の製造方法 | |
| JPS6254934A (ja) | 半導体装置の製造方法 | |
| JPS6336565A (ja) | 半導体装置の製造方法 | |
| JPS6294954A (ja) | 半導体集積回路の製造方法 | |
| JPH02298047A (ja) | 誘電体分離型半導体基板の製造方法 | |
| JPH04144134A (ja) | 半導体装置の製造方法 | |
| JPH0287547A (ja) | 絶縁層分離基板の製造方法 | |
| JPH0228936A (ja) | 半導体装置の製造方法 | |
| JPS6027120A (ja) | 選択的エピタキシヤル成長方法 | |
| JPS6353946A (ja) | 半導体装置の製造方法 |