JPS6278829A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6278829A
JPS6278829A JP21938685A JP21938685A JPS6278829A JP S6278829 A JPS6278829 A JP S6278829A JP 21938685 A JP21938685 A JP 21938685A JP 21938685 A JP21938685 A JP 21938685A JP S6278829 A JPS6278829 A JP S6278829A
Authority
JP
Japan
Prior art keywords
layer
epitaxial growth
semiconductor substrate
manufacturing
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21938685A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0413852B2 (enrdf_load_html_response
Inventor
Toshiaki Ogawa
小川　敏明
Kiyoshi Sakagami
阪上　潔
Shuji Nakao
中尾　修治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP21938685A priority Critical patent/JPS6278829A/ja
Publication of JPS6278829A publication Critical patent/JPS6278829A/ja
Publication of JPH0413852B2 publication Critical patent/JPH0413852B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
JP21938685A 1985-09-30 1985-09-30 半導体装置の製造方法 Granted JPS6278829A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21938685A JPS6278829A (ja) 1985-09-30 1985-09-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21938685A JPS6278829A (ja) 1985-09-30 1985-09-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6278829A true JPS6278829A (ja) 1987-04-11
JPH0413852B2 JPH0413852B2 (enrdf_load_html_response) 1992-03-11

Family

ID=16734603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21938685A Granted JPS6278829A (ja) 1985-09-30 1985-09-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6278829A (enrdf_load_html_response)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0234924A (ja) * 1988-07-25 1990-02-05 Matsushita Electron Corp 半導体装置の製造方法
JPH02268425A (ja) * 1989-04-10 1990-11-02 Toshiba Corp 半導体装置の製造方法
US6902988B2 (en) 1999-08-20 2005-06-07 S.O.I.Tec Silicon On Insulator Technologies S.A. Method for treating substrates for microelectronics and substrates obtained by said method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0234924A (ja) * 1988-07-25 1990-02-05 Matsushita Electron Corp 半導体装置の製造方法
JPH02268425A (ja) * 1989-04-10 1990-11-02 Toshiba Corp 半導体装置の製造方法
US6902988B2 (en) 1999-08-20 2005-06-07 S.O.I.Tec Silicon On Insulator Technologies S.A. Method for treating substrates for microelectronics and substrates obtained by said method
US7235427B2 (en) 1999-08-20 2007-06-26 S.O.I.Tec Silicon On Insulator Technologies Method for treating substrates for microelectronics and substrates obtained by said method

Also Published As

Publication number Publication date
JPH0413852B2 (enrdf_load_html_response) 1992-03-11

Similar Documents

Publication Publication Date Title
JP3352896B2 (ja) 貼り合わせ基板の作製方法
JPH04354126A (ja) 半導体装置の製造方法
JP2662495B2 (ja) 接着半導体基板の製造方法
JPH0917984A (ja) 貼り合わせｓｏｉ基板の製造方法
US3419956A (en) Technique for obtaining isolated integrated circuits
JP2624186B2 (ja) 貼り合わせシリコン基板の製造方法
JP2535957B2 (ja) 半導体基板
JPS6278829A (ja) 半導体装置の製造方法
JP2644069B2 (ja) 半導体装置の製造方法
JP2779659B2 (ja) 半導体装置の製造方法
JPH01302837A (ja) 半導体基板の製造方法
JPS61271839A (ja) パタ−ン形成方法
JPH0533915B2 (enrdf_load_html_response)
JPH05109677A (ja) Ｓｏｉ基板の製造方法
JPS63127531A (ja) 半導体装置の製造方法
JP2584639B2 (ja) 半導体基板の製造方法
JPH0661340A (ja) 張り合わせ半導体基板の製造方法
JP3061021B2 (ja) 部分ｓｏｉ基板およびその製造方法
JPH056883A (ja) 半導体基板の製造方法
JPH0342814A (ja) 半導体基板の製造方法
JPS6367736A (ja) 半導体基板の製造方法
JPH04181729A (ja) 半導体装置の製造方法
JP2001267290A (ja) 半導体装置の製造方法
JPS604259A (ja) 高耐圧トランジスタの製法
JPH03270209A (ja) 直接接合シリコン基板の作製方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees