JPS627701B2 - - Google Patents

Info

Publication number
JPS627701B2
JPS627701B2 JP51097707A JP9770776A JPS627701B2 JP S627701 B2 JPS627701 B2 JP S627701B2 JP 51097707 A JP51097707 A JP 51097707A JP 9770776 A JP9770776 A JP 9770776A JP S627701 B2 JPS627701 B2 JP S627701B2
Authority
JP
Japan
Prior art keywords
channel
transistor
well
type
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51097707A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5323577A (en
Inventor
Yoshio Sakai
Toshiaki Masuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9770776A priority Critical patent/JPS5323577A/ja
Publication of JPS5323577A publication Critical patent/JPS5323577A/ja
Publication of JPS627701B2 publication Critical patent/JPS627701B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP9770776A 1976-08-18 1976-08-18 Complementary type insulated gate effect transistor Granted JPS5323577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9770776A JPS5323577A (en) 1976-08-18 1976-08-18 Complementary type insulated gate effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9770776A JPS5323577A (en) 1976-08-18 1976-08-18 Complementary type insulated gate effect transistor

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP59259137A Division JPS60143658A (ja) 1984-12-10 1984-12-10 相補形絶縁ゲート電界効果トランジスタ集積回路
JP59259135A Division JPS60143664A (ja) 1984-12-10 1984-12-10 半導体メモリ集積回路
JP59259136A Division JPS60143665A (ja) 1984-12-10 1984-12-10 半導体メモリ
JP59259138A Division JPS60143659A (ja) 1984-12-10 1984-12-10 相補形絶縁ゲート電界効果トランジスタ集積回路

Publications (2)

Publication Number Publication Date
JPS5323577A JPS5323577A (en) 1978-03-04
JPS627701B2 true JPS627701B2 (enrdf_load_stackoverflow) 1987-02-18

Family

ID=14199378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9770776A Granted JPS5323577A (en) 1976-08-18 1976-08-18 Complementary type insulated gate effect transistor

Country Status (1)

Country Link
JP (1) JPS5323577A (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57113286A (en) * 1980-12-30 1982-07-14 Seiko Epson Corp Manufacture of semiconductor device
JPS57186353A (en) * 1981-05-12 1982-11-16 Seiko Epson Corp Complementary metal oxide semiconductor type semiconductor device
JPS5848959A (ja) * 1981-09-18 1983-03-23 Toshiba Corp 半導体装置
JPS59121865A (ja) * 1982-12-28 1984-07-14 Toshiba Corp 相補型半導体装置の製造方法
JPS6031276A (ja) * 1983-07-29 1985-02-18 Toshiba Corp 半導体装置及びその製造方法
JPS6047457A (ja) * 1983-08-26 1985-03-14 Mitsubishi Electric Corp 半導体装置
JPS60154555A (ja) * 1984-01-24 1985-08-14 Nec Corp 相補型電界効果トランジスタを用いた半導体装置
JPS60143658A (ja) * 1984-12-10 1985-07-29 Hitachi Ltd 相補形絶縁ゲート電界効果トランジスタ集積回路
FR2577338B1 (fr) * 1985-02-12 1987-03-06 Eurotechnique Sa Procede de fabrication d'une memoire dynamique en circuit integre et memoire obtenue par ce procede
JP2724459B2 (ja) * 1987-06-05 1998-03-09 セイコーインスツルメンツ株式会社 半導体集積回路装置の製造方法
US5238860A (en) * 1987-07-10 1993-08-24 Kabushiki Kaisha Toshiba Semiconductor device having different impurity concentration wells
IT1222158B (it) * 1987-07-28 1990-09-05 Sgs Microelettronica Spa Procedimento per la fabbricazione di dispositivi cmos con riduzione del numero di fasi di mascheratura
JPH0372668A (ja) * 1990-07-26 1991-03-27 Seiko Epson Corp 半導体装置

Also Published As

Publication number Publication date
JPS5323577A (en) 1978-03-04

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