JPS5323577A - Complementary type insulated gate effect transistor - Google Patents

Complementary type insulated gate effect transistor

Info

Publication number
JPS5323577A
JPS5323577A JP9770776A JP9770776A JPS5323577A JP S5323577 A JPS5323577 A JP S5323577A JP 9770776 A JP9770776 A JP 9770776A JP 9770776 A JP9770776 A JP 9770776A JP S5323577 A JPS5323577 A JP S5323577A
Authority
JP
Japan
Prior art keywords
effect transistor
insulated gate
complementary type
type insulated
gate effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9770776A
Other languages
English (en)
Japanese (ja)
Other versions
JPS627701B2 (enrdf_load_stackoverflow
Inventor
Yoshio Sakai
Toshiaki Masuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9770776A priority Critical patent/JPS5323577A/ja
Publication of JPS5323577A publication Critical patent/JPS5323577A/ja
Publication of JPS627701B2 publication Critical patent/JPS627701B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP9770776A 1976-08-18 1976-08-18 Complementary type insulated gate effect transistor Granted JPS5323577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9770776A JPS5323577A (en) 1976-08-18 1976-08-18 Complementary type insulated gate effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9770776A JPS5323577A (en) 1976-08-18 1976-08-18 Complementary type insulated gate effect transistor

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP59259136A Division JPS60143665A (ja) 1984-12-10 1984-12-10 半導体メモリ
JP59259135A Division JPS60143664A (ja) 1984-12-10 1984-12-10 半導体メモリ集積回路
JP59259138A Division JPS60143659A (ja) 1984-12-10 1984-12-10 相補形絶縁ゲート電界効果トランジスタ集積回路
JP59259137A Division JPS60143658A (ja) 1984-12-10 1984-12-10 相補形絶縁ゲート電界効果トランジスタ集積回路

Publications (2)

Publication Number Publication Date
JPS5323577A true JPS5323577A (en) 1978-03-04
JPS627701B2 JPS627701B2 (enrdf_load_stackoverflow) 1987-02-18

Family

ID=14199378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9770776A Granted JPS5323577A (en) 1976-08-18 1976-08-18 Complementary type insulated gate effect transistor

Country Status (1)

Country Link
JP (1) JPS5323577A (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57113286A (en) * 1980-12-30 1982-07-14 Seiko Epson Corp Manufacture of semiconductor device
JPS57186353A (en) * 1981-05-12 1982-11-16 Seiko Epson Corp Complementary metal oxide semiconductor type semiconductor device
JPS5848959A (ja) * 1981-09-18 1983-03-23 Toshiba Corp 半導体装置
JPS59121865A (ja) * 1982-12-28 1984-07-14 Toshiba Corp 相補型半導体装置の製造方法
JPS6031276A (ja) * 1983-07-29 1985-02-18 Toshiba Corp 半導体装置及びその製造方法
JPS6047457A (ja) * 1983-08-26 1985-03-14 Mitsubishi Electric Corp 半導体装置
JPS60143658A (ja) * 1984-12-10 1985-07-29 Hitachi Ltd 相補形絶縁ゲート電界効果トランジスタ集積回路
JPS60154555A (ja) * 1984-01-24 1985-08-14 Nec Corp 相補型電界効果トランジスタを用いた半導体装置
JPS61229352A (ja) * 1985-02-12 1986-10-13 エスジェーエス―トムソン　ミクロエレクトロニクス　ソシエテ　アノニム 集積回路型ダイナミツクメモリ及びその製造方法
JPS63305546A (ja) * 1987-06-05 1988-12-13 Seiko Instr & Electronics Ltd 半導体集積回路装置の製造方法
US4902634A (en) * 1987-07-28 1990-02-20 Sgs-Thomson Microelectronics S.P.A. Process for manufacturing CMOS devices
JPH0372668A (ja) * 1990-07-26 1991-03-27 Seiko Epson Corp 半導体装置
US5238860A (en) * 1987-07-10 1993-08-24 Kabushiki Kaisha Toshiba Semiconductor device having different impurity concentration wells

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57113286A (en) * 1980-12-30 1982-07-14 Seiko Epson Corp Manufacture of semiconductor device
JPS57186353A (en) * 1981-05-12 1982-11-16 Seiko Epson Corp Complementary metal oxide semiconductor type semiconductor device
JPS5848959A (ja) * 1981-09-18 1983-03-23 Toshiba Corp 半導体装置
JPS59121865A (ja) * 1982-12-28 1984-07-14 Toshiba Corp 相補型半導体装置の製造方法
JPS6031276A (ja) * 1983-07-29 1985-02-18 Toshiba Corp 半導体装置及びその製造方法
JPS6047457A (ja) * 1983-08-26 1985-03-14 Mitsubishi Electric Corp 半導体装置
JPS60154555A (ja) * 1984-01-24 1985-08-14 Nec Corp 相補型電界効果トランジスタを用いた半導体装置
JPS60143658A (ja) * 1984-12-10 1985-07-29 Hitachi Ltd 相補形絶縁ゲート電界効果トランジスタ集積回路
JPS61229352A (ja) * 1985-02-12 1986-10-13 エスジェーエス―トムソン　ミクロエレクトロニクス　ソシエテ　アノニム 集積回路型ダイナミツクメモリ及びその製造方法
JPS63305546A (ja) * 1987-06-05 1988-12-13 Seiko Instr & Electronics Ltd 半導体集積回路装置の製造方法
US5238860A (en) * 1987-07-10 1993-08-24 Kabushiki Kaisha Toshiba Semiconductor device having different impurity concentration wells
US4902634A (en) * 1987-07-28 1990-02-20 Sgs-Thomson Microelectronics S.P.A. Process for manufacturing CMOS devices
JPH0372668A (ja) * 1990-07-26 1991-03-27 Seiko Epson Corp 半導体装置

Also Published As

Publication number Publication date
JPS627701B2 (enrdf_load_stackoverflow) 1987-02-18

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