JPH0312473B2 - - Google Patents

Info

Publication number
JPH0312473B2
JPH0312473B2 JP59259135A JP25913584A JPH0312473B2 JP H0312473 B2 JPH0312473 B2 JP H0312473B2 JP 59259135 A JP59259135 A JP 59259135A JP 25913584 A JP25913584 A JP 25913584A JP H0312473 B2 JPH0312473 B2 JP H0312473B2
Authority
JP
Japan
Prior art keywords
channel
region
field effect
insulated gate
gate field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59259135A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60143664A (ja
Inventor
Yoshio Sakai
Toshiaki Masuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59259135A priority Critical patent/JPS60143664A/ja
Publication of JPS60143664A publication Critical patent/JPS60143664A/ja
Publication of JPH0312473B2 publication Critical patent/JPH0312473B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP59259135A 1984-12-10 1984-12-10 半導体メモリ集積回路 Granted JPS60143664A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59259135A JPS60143664A (ja) 1984-12-10 1984-12-10 半導体メモリ集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59259135A JPS60143664A (ja) 1984-12-10 1984-12-10 半導体メモリ集積回路

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9770776A Division JPS5323577A (en) 1976-08-18 1976-08-18 Complementary type insulated gate effect transistor

Publications (2)

Publication Number Publication Date
JPS60143664A JPS60143664A (ja) 1985-07-29
JPH0312473B2 true JPH0312473B2 (enrdf_load_stackoverflow) 1991-02-20

Family

ID=17329807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59259135A Granted JPS60143664A (ja) 1984-12-10 1984-12-10 半導体メモリ集積回路

Country Status (1)

Country Link
JP (1) JPS60143664A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1223571B (it) * 1987-12-21 1990-09-19 Sgs Thomson Microelectronics Procedimento per la fabbricazione di dispositivi integrati cmos con lunghezze di porta ridotte

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ELECTRONICS *

Also Published As

Publication number Publication date
JPS60143664A (ja) 1985-07-29

Similar Documents

Publication Publication Date Title
US4213139A (en) Double level polysilicon series transistor cell
US5247198A (en) Semiconductor integrated circuit device with multiplayered wiring
US4380863A (en) Method of making double level polysilicon series transistor devices
JPS627701B2 (enrdf_load_stackoverflow)
US4319263A (en) Double level polysilicon series transistor devices
KR0178551B1 (ko) 반도체 집적 회로 제조 방법
JPH08186179A (ja) 相補型半導体装置
EP0091256B1 (en) Cmos device
KR100344489B1 (ko) 반도체집적회로장치의제조방법
JPH08139206A (ja) 半導体装置およびその製造方法
JPS628950B2 (enrdf_load_stackoverflow)
JPH0695528B2 (ja) 半導体装置の製造方法
JP3562611B2 (ja) 半導体装置及びその製造方法
JPH0312473B2 (enrdf_load_stackoverflow)
JPS6038856A (ja) 半導体装置及びその製造方法
JPH0241910B2 (enrdf_load_stackoverflow)
JPH01164062A (ja) 半導体装置の製造方法
JPH0213822B2 (enrdf_load_stackoverflow)
KR970004817B1 (ko) 반도체장치 및 그 제조방법
JPS60143658A (ja) 相補形絶縁ゲート電界効果トランジスタ集積回路
JPS643065B2 (enrdf_load_stackoverflow)
JPS61194764A (ja) 半導体装置の製造方法
US6127708A (en) Semiconductor device having an intervening region between channel stopper and diffusion region
JPS63155662A (ja) Ｃｍｉｓ型ダイナミツクメモリ装置
KR960003863B1 (ko) 불순물이 도프된 매입영역을 가진 반도체장치 및 그 제조방법