JPS60143664A - 半導体メモリ集積回路 - Google Patents

半導体メモリ集積回路

Info

Publication number
JPS60143664A
JPS60143664A JP59259135A JP25913584A JPS60143664A JP S60143664 A JPS60143664 A JP S60143664A JP 59259135 A JP59259135 A JP 59259135A JP 25913584 A JP25913584 A JP 25913584A JP S60143664 A JPS60143664 A JP S60143664A
Authority
JP
Japan
Prior art keywords
channel
transistor
well
integrated circuit
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59259135A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0312473B2 (enrdf_load_stackoverflow
Inventor
Yoshio Sakai
芳男 酒井
Toshiaki Masuhara
増原　利明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59259135A priority Critical patent/JPS60143664A/ja
Publication of JPS60143664A publication Critical patent/JPS60143664A/ja
Publication of JPH0312473B2 publication Critical patent/JPH0312473B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP59259135A 1984-12-10 1984-12-10 半導体メモリ集積回路 Granted JPS60143664A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59259135A JPS60143664A (ja) 1984-12-10 1984-12-10 半導体メモリ集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59259135A JPS60143664A (ja) 1984-12-10 1984-12-10 半導体メモリ集積回路

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9770776A Division JPS5323577A (en) 1976-08-18 1976-08-18 Complementary type insulated gate effect transistor

Publications (2)

Publication Number Publication Date
JPS60143664A true JPS60143664A (ja) 1985-07-29
JPH0312473B2 JPH0312473B2 (enrdf_load_stackoverflow) 1991-02-20

Family

ID=17329807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59259135A Granted JPS60143664A (ja) 1984-12-10 1984-12-10 半導体メモリ集積回路

Country Status (1)

Country Link
JP (1) JPS60143664A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022667A (ja) * 1987-12-21 1990-01-08 Sgs Thomson Microelettronica Spa 長さが縮小されたゲートを有するｃｍｏｓ集積装置を製造するための方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ELECTRONICS *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022667A (ja) * 1987-12-21 1990-01-08 Sgs Thomson Microelettronica Spa 長さが縮小されたゲートを有するｃｍｏｓ集積装置を製造するための方法

Also Published As

Publication number Publication date
JPH0312473B2 (enrdf_load_stackoverflow) 1991-02-20

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