JPH05872B2 - - Google Patents

Info

Publication number
JPH05872B2
JPH05872B2 JP57207076A JP20707682A JPH05872B2 JP H05872 B2 JPH05872 B2 JP H05872B2 JP 57207076 A JP57207076 A JP 57207076A JP 20707682 A JP20707682 A JP 20707682A JP H05872 B2 JPH05872 B2 JP H05872B2
Authority
JP
Japan
Prior art keywords
source
diffusion layer
diffusion
gate
cross
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57207076A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5996768A (ja
Inventor
Yasuharu Nagayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57207076A priority Critical patent/JPS5996768A/ja
Publication of JPS5996768A publication Critical patent/JPS5996768A/ja
Publication of JPH05872B2 publication Critical patent/JPH05872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Semiconductor Memories (AREA)
JP57207076A 1982-11-24 1982-11-24 半導体装置 Granted JPS5996768A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57207076A JPS5996768A (ja) 1982-11-24 1982-11-24 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57207076A JPS5996768A (ja) 1982-11-24 1982-11-24 半導体装置

Publications (2)

Publication Number Publication Date
JPS5996768A JPS5996768A (ja) 1984-06-04
JPH05872B2 true JPH05872B2 (enrdf_load_stackoverflow) 1993-01-06

Family

ID=16533799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57207076A Granted JPS5996768A (ja) 1982-11-24 1982-11-24 半導体装置

Country Status (1)

Country Link
JP (1) JPS5996768A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900000065B1 (ko) * 1985-08-13 1990-01-19 가부시끼가이샤 도오시바 독출전용 반도체기억장치와 그 제조방법
JPS62229976A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 半導体装置およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5271974A (en) * 1975-12-11 1977-06-15 Nec Corp Production of semiconductor device

Also Published As

Publication number Publication date
JPS5996768A (ja) 1984-06-04

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