JPS5996768A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5996768A
JPS5996768A JP57207076A JP20707682A JPS5996768A JP S5996768 A JPS5996768 A JP S5996768A JP 57207076 A JP57207076 A JP 57207076A JP 20707682 A JP20707682 A JP 20707682A JP S5996768 A JPS5996768 A JP S5996768A
Authority
JP
Japan
Prior art keywords
source
oxide film
region
drain region
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57207076A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05872B2 (enrdf_load_stackoverflow
Inventor
Yasuharu Nagayama
長山　安治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57207076A priority Critical patent/JPS5996768A/ja
Publication of JPS5996768A publication Critical patent/JPS5996768A/ja
Publication of JPH05872B2 publication Critical patent/JPH05872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Semiconductor Memories (AREA)
JP57207076A 1982-11-24 1982-11-24 半導体装置 Granted JPS5996768A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57207076A JPS5996768A (ja) 1982-11-24 1982-11-24 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57207076A JPS5996768A (ja) 1982-11-24 1982-11-24 半導体装置

Publications (2)

Publication Number Publication Date
JPS5996768A true JPS5996768A (ja) 1984-06-04
JPH05872B2 JPH05872B2 (enrdf_load_stackoverflow) 1993-01-06

Family

ID=16533799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57207076A Granted JPS5996768A (ja) 1982-11-24 1982-11-24 半導体装置

Country Status (1)

Country Link
JP (1) JPS5996768A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5061649A (en) * 1986-03-31 1991-10-29 Kabushiki Kaisha Toshiba Field effect transistor with lightly doped drain structure and method for manufacturing the same
US5101262A (en) * 1985-08-13 1992-03-31 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing it

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5271974A (en) * 1975-12-11 1977-06-15 Nec Corp Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5271974A (en) * 1975-12-11 1977-06-15 Nec Corp Production of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5101262A (en) * 1985-08-13 1992-03-31 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing it
US5061649A (en) * 1986-03-31 1991-10-29 Kabushiki Kaisha Toshiba Field effect transistor with lightly doped drain structure and method for manufacturing the same

Also Published As

Publication number Publication date
JPH05872B2 (enrdf_load_stackoverflow) 1993-01-06

Similar Documents

Publication Publication Date Title
US4213139A (en) Double level polysilicon series transistor cell
US5952678A (en) SRAM cell with no PN junction between driver and load transistors and method of manufacturing the same
US5276346A (en) Semiconductor integrated circuit device having protective/output elements and internal circuits
KR900000820B1 (ko) 반도체 메모리 장치
US4380863A (en) Method of making double level polysilicon series transistor devices
Chapman et al. An 0.8 µm CMOS technology for high performance logic applications
US5953604A (en) Methods for making compact P-channel/N-channel transistor structure
US5610089A (en) Method of fabrication of semiconductor integrated circuit device
US4319263A (en) Double level polysilicon series transistor devices
US6009010A (en) Static semiconductor memory device having data lines in parallel with power supply lines
US4280271A (en) Three level interconnect process for manufacture of integrated circuit devices
KR950021670A (ko) 반도체장치 및 그 제조방법
US6300663B1 (en) Insulated-gate field-effect transistors having different gate capacitances
US3793721A (en) Integrated circuit and method of fabrication
JPS5996768A (ja) 半導体装置
KR100252560B1 (ko) 반도체메모리장치및그제조방법
Bastani et al. Advanced one micron BiCMOS technology for high speed 256K SRAMS
JP3299158B2 (ja) 半導体装置
JPS60143665A (ja) 半導体メモリ
JP3006134B2 (ja) スタティック半導体記憶装置
JPH0410227B2 (enrdf_load_stackoverflow)
KR900017190A (ko) 반도체 집적회로 장치
JPS63155662A (ja) Ｃｍｉｓ型ダイナミツクメモリ装置
ES8201768A1 (es) Perfeccionamientos introducidos en las puertas logicas de transistores.
Schroeder et al. An advanced, radiation hardened bulk CMOS/LSI technology