JPH0410227B2 - - Google Patents

Info

Publication number
JPH0410227B2
JPH0410227B2 JP57075334A JP7533482A JPH0410227B2 JP H0410227 B2 JPH0410227 B2 JP H0410227B2 JP 57075334 A JP57075334 A JP 57075334A JP 7533482 A JP7533482 A JP 7533482A JP H0410227 B2 JPH0410227 B2 JP H0410227B2
Authority
JP
Japan
Prior art keywords
well
type
regions
semiconductor
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57075334A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58192359A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57075334A priority Critical patent/JPS58192359A/ja
Publication of JPS58192359A publication Critical patent/JPS58192359A/ja
Publication of JPH0410227B2 publication Critical patent/JPH0410227B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/857—Complementary IGFETs, e.g. CMOS comprising an N-type well but not a P-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP57075334A 1982-05-07 1982-05-07 半導体装置 Granted JPS58192359A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57075334A JPS58192359A (ja) 1982-05-07 1982-05-07 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57075334A JPS58192359A (ja) 1982-05-07 1982-05-07 半導体装置

Publications (2)

Publication Number Publication Date
JPS58192359A JPS58192359A (ja) 1983-11-09
JPH0410227B2 true JPH0410227B2 (enrdf_load_stackoverflow) 1992-02-24

Family

ID=13573248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57075334A Granted JPS58192359A (ja) 1982-05-07 1982-05-07 半導体装置

Country Status (1)

Country Link
JP (1) JPS58192359A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050953A (ja) * 1983-08-31 1985-03-22 Toshiba Corp 耐放射線半導体素子
JPS629665A (ja) * 1985-07-05 1987-01-17 Matsushita Electric Ind Co Ltd 半導体記憶装置
JPH0716005B2 (ja) * 1988-04-08 1995-02-22 株式会社東芝 半導体装置
WO2006127751A2 (en) * 2005-05-23 2006-11-30 Amalfi Semiconductor, Inc. Electrically isolated cmos device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5751738B2 (enrdf_load_stackoverflow) * 1973-12-27 1982-11-04
JPS5211881A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS6048905B2 (ja) * 1975-07-18 1985-10-30 株式会社東芝 半導体集積回路装置
JPS5575265A (en) * 1978-12-01 1980-06-06 Fujitsu Ltd Complementary type field-effect metal-insulator- semiconductor device
JPS5949702B2 (ja) * 1978-12-18 1984-12-04 松下電器産業株式会社 半導体集積回路装置
JPS55111171A (en) * 1979-02-20 1980-08-27 Mitsubishi Electric Corp Field-effect semiconductor device

Also Published As

Publication number Publication date
JPS58192359A (ja) 1983-11-09

Similar Documents

Publication Publication Date Title
US6063686A (en) Method of manufacturing an improved SOI (silicon-on-insulator) semiconductor integrated circuit device
JPS627701B2 (enrdf_load_stackoverflow)
JP3230846B2 (ja) 半導体装置および半導体集積回路装置
JPH0410227B2 (enrdf_load_stackoverflow)
JPS63158866A (ja) 相補形半導体装置
JPS5944784B2 (ja) 相補型ｍｏｓ半導体装置
JP2817285B2 (ja) 電界効果型トランジスタ
JPS63131565A (ja) 半導体装置
JP3102923B2 (ja) 半導体記憶装置
JPH0812917B2 (ja) Ｍｉｓトランジスタの動作方法およびｍｉｓトランジスタ
JPS58182863A (ja) 半導体装置
JP2864499B2 (ja) 電界効果型薄膜トランジスタ
KR960000230B1 (ko) 반도체 장치
JPH0222858A (ja) 半導体装置
JPH03283670A (ja) Ｍｏｓトランジスタ
JPH0656878B2 (ja) Ｃｍｏｓ半導体装置の製造方法
JPS632365A (ja) 半導体集積回路の製造方法
JPS62286268A (ja) 半導体集積回路装置
JPH07105493B2 (ja) Ｍｉｓ型トランジスタ
JPS6396952A (ja) 半導体記憶装置
JPS63124575A (ja) 半導体装置
JPS6320382B2 (enrdf_load_stackoverflow)
JPH01295461A (ja) 半導体装置の製造方法
JPS60154662A (ja) Ｍｏｓ型半導体装置
JPS60143664A (ja) 半導体メモリ集積回路