JPS58192359A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58192359A
JPS58192359A JP57075334A JP7533482A JPS58192359A JP S58192359 A JPS58192359 A JP S58192359A JP 57075334 A JP57075334 A JP 57075334A JP 7533482 A JP7533482 A JP 7533482A JP S58192359 A JPS58192359 A JP S58192359A
Authority
JP
Japan
Prior art keywords
well
type
layer
region
misfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57075334A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0410227B2 (enrdf_load_stackoverflow
Inventor
Shinji Shimizu
真二 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57075334A priority Critical patent/JPS58192359A/ja
Publication of JPS58192359A publication Critical patent/JPS58192359A/ja
Publication of JPH0410227B2 publication Critical patent/JPH0410227B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/857—Complementary IGFETs, e.g. CMOS comprising an N-type well but not a P-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP57075334A 1982-05-07 1982-05-07 半導体装置 Granted JPS58192359A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57075334A JPS58192359A (ja) 1982-05-07 1982-05-07 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57075334A JPS58192359A (ja) 1982-05-07 1982-05-07 半導体装置

Publications (2)

Publication Number Publication Date
JPS58192359A true JPS58192359A (ja) 1983-11-09
JPH0410227B2 JPH0410227B2 (enrdf_load_stackoverflow) 1992-02-24

Family

ID=13573248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57075334A Granted JPS58192359A (ja) 1982-05-07 1982-05-07 半導体装置

Country Status (1)

Country Link
JP (1) JPS58192359A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050953A (ja) * 1983-08-31 1985-03-22 Toshiba Corp 耐放射線半導体素子
JPS629665A (ja) * 1985-07-05 1987-01-17 Matsushita Electric Ind Co Ltd 半導体記憶装置
US4928157A (en) * 1988-04-08 1990-05-22 Kabushiki Kaisha Toshiba Protection diode structure
WO2006127751A3 (en) * 2005-05-23 2009-04-16 Amalfi Semiconductor Inc Electrically isolated cmos device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5098791A (enrdf_load_stackoverflow) * 1973-12-27 1975-08-06
JPS5211881A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS5211883A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS5575265A (en) * 1978-12-01 1980-06-06 Fujitsu Ltd Complementary type field-effect metal-insulator- semiconductor device
JPS5582461A (en) * 1978-12-18 1980-06-21 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPS55111171A (en) * 1979-02-20 1980-08-27 Mitsubishi Electric Corp Field-effect semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5098791A (enrdf_load_stackoverflow) * 1973-12-27 1975-08-06
JPS5211881A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS5211883A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS5575265A (en) * 1978-12-01 1980-06-06 Fujitsu Ltd Complementary type field-effect metal-insulator- semiconductor device
JPS5582461A (en) * 1978-12-18 1980-06-21 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPS55111171A (en) * 1979-02-20 1980-08-27 Mitsubishi Electric Corp Field-effect semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050953A (ja) * 1983-08-31 1985-03-22 Toshiba Corp 耐放射線半導体素子
JPS629665A (ja) * 1985-07-05 1987-01-17 Matsushita Electric Ind Co Ltd 半導体記憶装置
US4928157A (en) * 1988-04-08 1990-05-22 Kabushiki Kaisha Toshiba Protection diode structure
WO2006127751A3 (en) * 2005-05-23 2009-04-16 Amalfi Semiconductor Inc Electrically isolated cmos device

Also Published As

Publication number Publication date
JPH0410227B2 (enrdf_load_stackoverflow) 1992-02-24

Similar Documents

Publication Publication Date Title
JPS6164166A (ja) 半導体装置
JPS61111576A (ja) 半導体装置
JPS62174968A (ja) 半導体装置
JP2690242B2 (ja) 半導体固定記憶装置
JPS58192359A (ja) 半導体装置
JPS618969A (ja) 半導体集積回路装置
JPS6123669B2 (enrdf_load_stackoverflow)
JPH04370978A (ja) 量子効果型電界効果トランジスタ
JP2956181B2 (ja) 抵抗素子を有する半導体装置
JPS6074665A (ja) 半導体装置の製造方法
JPH04370977A (ja) 量子化電界効果トランジスタ
JP2642000B2 (ja) Ｍｏｓ集積回路装置
JPS61232676A (ja) 半導体装置
JPS5834949B2 (ja) 半導体メモリ装置
JPH03165520A (ja) 半導体装置
JPH01295461A (ja) 半導体装置の製造方法
JPH0440867B2 (enrdf_load_stackoverflow)
JPH03278572A (ja) 半導体装置
JPS61290752A (ja) 半導体集積回路装置
JPH03209724A (ja) 半導体装置
JPS624369A (ja) 二重拡散形絶縁ゲ−ト電界効果トランジスタ
JPS60149149U (ja) Ｃｍｏｓ集積回路
JPS62214658A (ja) 半導体装置
JPH0247873A (ja) 半導体集積回路装置
JPS5877065U (ja) 集積回路装置