IT1222158B - Procedimento per la fabbricazione di dispositivi cmos con riduzione del numero di fasi di mascheratura - Google Patents
Procedimento per la fabbricazione di dispositivi cmos con riduzione del numero di fasi di mascheraturaInfo
- Publication number
- IT1222158B IT1222158B IT21479/87A IT2147987A IT1222158B IT 1222158 B IT1222158 B IT 1222158B IT 21479/87 A IT21479/87 A IT 21479/87A IT 2147987 A IT2147987 A IT 2147987A IT 1222158 B IT1222158 B IT 1222158B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- manufacture
- reduction
- cmos devices
- masking
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000000873 masking effect Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/082—Ion implantation FETs/COMs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT21479/87A IT1222158B (it) | 1987-07-28 | 1987-07-28 | Procedimento per la fabbricazione di dispositivi cmos con riduzione del numero di fasi di mascheratura |
US07/220,652 US4902634A (en) | 1987-07-28 | 1988-07-18 | Process for manufacturing CMOS devices |
EP88111559A EP0301364A3 (en) | 1987-07-28 | 1988-07-19 | Process for manufacturing cmos devices |
JP63187955A JPS6442853A (en) | 1987-07-28 | 1988-07-27 | Manufacturing process of cmos device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT21479/87A IT1222158B (it) | 1987-07-28 | 1987-07-28 | Procedimento per la fabbricazione di dispositivi cmos con riduzione del numero di fasi di mascheratura |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8721479A0 IT8721479A0 (it) | 1987-07-28 |
IT1222158B true IT1222158B (it) | 1990-09-05 |
Family
ID=11182440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT21479/87A IT1222158B (it) | 1987-07-28 | 1987-07-28 | Procedimento per la fabbricazione di dispositivi cmos con riduzione del numero di fasi di mascheratura |
Country Status (4)
Country | Link |
---|---|
US (1) | US4902634A (it) |
EP (1) | EP0301364A3 (it) |
JP (1) | JPS6442853A (it) |
IT (1) | IT1222158B (it) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5030582A (en) * | 1988-10-14 | 1991-07-09 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating a CMOS semiconductor device |
US5273914A (en) * | 1988-10-14 | 1993-12-28 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating a CMOS semiconductor devices |
JP2926980B2 (ja) * | 1990-11-30 | 1999-07-28 | アイシン精機株式会社 | 車両用シート |
JPH05267604A (ja) * | 1991-05-08 | 1993-10-15 | Seiko Instr Inc | 半導体装置の製造方法 |
JPH0732919A (ja) * | 1993-07-20 | 1995-02-03 | Mitsuba Electric Mfg Co Ltd | 車両用パワーシートの駆動装置 |
DE19839641A1 (de) * | 1998-08-31 | 2000-03-09 | Siemens Ag | Verfahren zur Herstellung von Transistoren |
KR100278996B1 (ko) * | 1998-12-18 | 2001-02-01 | 김영환 | 반도체장치의 콘택 형성방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5323577A (en) * | 1976-08-18 | 1978-03-04 | Hitachi Ltd | Complementary type insulated gate effect transistor |
JPS58218161A (ja) * | 1982-06-14 | 1983-12-19 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS58220461A (ja) * | 1982-06-16 | 1983-12-22 | Matsushita Electronics Corp | 半導体装置の製造方法 |
JPS6060754A (ja) * | 1983-09-14 | 1985-04-08 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS60147156A (ja) * | 1984-01-11 | 1985-08-03 | Seiko Instr & Electronics Ltd | 半導体装置の製造方法 |
JPS61287161A (ja) * | 1985-06-14 | 1986-12-17 | Matsushita Electronics Corp | 相補型mos半導体装置の製造方法 |
-
1987
- 1987-07-28 IT IT21479/87A patent/IT1222158B/it active
-
1988
- 1988-07-18 US US07/220,652 patent/US4902634A/en not_active Expired - Lifetime
- 1988-07-19 EP EP88111559A patent/EP0301364A3/en not_active Withdrawn
- 1988-07-27 JP JP63187955A patent/JPS6442853A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US4902634A (en) | 1990-02-20 |
IT8721479A0 (it) | 1987-07-28 |
JPS6442853A (en) | 1989-02-15 |
EP0301364A2 (en) | 1989-02-01 |
EP0301364A3 (en) | 1990-06-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970730 |