JPS6250979B2 - - Google Patents
Info
- Publication number
- JPS6250979B2 JPS6250979B2 JP55129777A JP12977780A JPS6250979B2 JP S6250979 B2 JPS6250979 B2 JP S6250979B2 JP 55129777 A JP55129777 A JP 55129777A JP 12977780 A JP12977780 A JP 12977780A JP S6250979 B2 JPS6250979 B2 JP S6250979B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- forming
- semiconductor substrate
- selective
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12977780A JPS5753960A (ja) | 1980-09-16 | 1980-09-16 | Sentakusankamakunokeiseihoho |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12977780A JPS5753960A (ja) | 1980-09-16 | 1980-09-16 | Sentakusankamakunokeiseihoho |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5753960A JPS5753960A (ja) | 1982-03-31 |
JPS6250979B2 true JPS6250979B2 (enrdf_load_stackoverflow) | 1987-10-28 |
Family
ID=15017951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12977780A Granted JPS5753960A (ja) | 1980-09-16 | 1980-09-16 | Sentakusankamakunokeiseihoho |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5753960A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6341590U (enrdf_load_stackoverflow) * | 1986-09-03 | 1988-03-18 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06101519B2 (ja) * | 1984-11-06 | 1994-12-12 | 日本電装株式会社 | 半導体素子分離両域の形成方法 |
EP0416809A3 (en) * | 1989-09-08 | 1991-08-07 | American Telephone And Telegraph Company | Reduced size etching method for integrated circuits |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4923071A (enrdf_load_stackoverflow) * | 1972-06-28 | 1974-03-01 | ||
JPS5391666A (en) * | 1977-01-24 | 1978-08-11 | Hitachi Ltd | Manufacture for semiconductor device |
-
1980
- 1980-09-16 JP JP12977780A patent/JPS5753960A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6341590U (enrdf_load_stackoverflow) * | 1986-09-03 | 1988-03-18 |
Also Published As
Publication number | Publication date |
---|---|
JPS5753960A (ja) | 1982-03-31 |
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