JPS6240857B2 - - Google Patents

Info

Publication number
JPS6240857B2
JPS6240857B2 JP57120905A JP12090582A JPS6240857B2 JP S6240857 B2 JPS6240857 B2 JP S6240857B2 JP 57120905 A JP57120905 A JP 57120905A JP 12090582 A JP12090582 A JP 12090582A JP S6240857 B2 JPS6240857 B2 JP S6240857B2
Authority
JP
Japan
Prior art keywords
oxide film
substrate
trench
semiconductor
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57120905A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5911645A (ja
Inventor
Kazutoshi Kamibayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57120905A priority Critical patent/JPS5911645A/ja
Publication of JPS5911645A publication Critical patent/JPS5911645A/ja
Publication of JPS6240857B2 publication Critical patent/JPS6240857B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0121—
    • H10W10/13—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP57120905A 1982-07-12 1982-07-12 半導体装置の製造方法 Granted JPS5911645A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57120905A JPS5911645A (ja) 1982-07-12 1982-07-12 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57120905A JPS5911645A (ja) 1982-07-12 1982-07-12 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5911645A JPS5911645A (ja) 1984-01-21
JPS6240857B2 true JPS6240857B2 (enExample) 1987-08-31

Family

ID=14797895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57120905A Granted JPS5911645A (ja) 1982-07-12 1982-07-12 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5911645A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5008180A (en) * 1989-04-07 1991-04-16 Eastman Kodak Company Photographic recording material containing a cyan dye-forming coupler
KR960014452B1 (ko) * 1993-12-22 1996-10-15 금성일렉트론 주식회사 반도체 소자분리 방법
US5472904A (en) * 1994-03-02 1995-12-05 Micron Technology, Inc. Thermal trench isolation
US5438016A (en) * 1994-03-02 1995-08-01 Micron Semiconductor, Inc. Method of semiconductor device isolation employing polysilicon layer for field oxide formation
US5753962A (en) * 1996-09-16 1998-05-19 Micron Technology, Inc. Texturized polycrystalline silicon to aid field oxide formation
KR100444607B1 (ko) * 2002-10-24 2004-08-16 주식회사 하이닉스반도체 반도체 소자의 소자분리막 형성방법

Also Published As

Publication number Publication date
JPS5911645A (ja) 1984-01-21

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