JPH0355984B2 - - Google Patents

Info

Publication number
JPH0355984B2
JPH0355984B2 JP57053530A JP5353082A JPH0355984B2 JP H0355984 B2 JPH0355984 B2 JP H0355984B2 JP 57053530 A JP57053530 A JP 57053530A JP 5353082 A JP5353082 A JP 5353082A JP H0355984 B2 JPH0355984 B2 JP H0355984B2
Authority
JP
Japan
Prior art keywords
mask material
substrate
region
film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57053530A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58171832A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57053530A priority Critical patent/JPS58171832A/ja
Priority to DE8282305018T priority patent/DE3278842D1/de
Priority to EP82305018A priority patent/EP0090111B1/en
Priority to US06/423,107 priority patent/US4523369A/en
Publication of JPS58171832A publication Critical patent/JPS58171832A/ja
Publication of JPH0355984B2 publication Critical patent/JPH0355984B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0148—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising introducing impurities in side walls or bottom walls of trenches, e.g. for forming channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
JP57053530A 1982-03-31 1982-03-31 半導体装置の製造方法 Granted JPS58171832A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57053530A JPS58171832A (ja) 1982-03-31 1982-03-31 半導体装置の製造方法
DE8282305018T DE3278842D1 (en) 1982-03-31 1982-09-23 Method of manufacturing a semiconductor device comprising a dielectric isolation region
EP82305018A EP0090111B1 (en) 1982-03-31 1982-09-23 Method of manufacturing a semiconductor device comprising a dielectric isolation region
US06/423,107 US4523369A (en) 1982-03-31 1982-09-24 Method for manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57053530A JPS58171832A (ja) 1982-03-31 1982-03-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58171832A JPS58171832A (ja) 1983-10-08
JPH0355984B2 true JPH0355984B2 (enExample) 1991-08-27

Family

ID=12945361

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57053530A Granted JPS58171832A (ja) 1982-03-31 1982-03-31 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US4523369A (enExample)
EP (1) EP0090111B1 (enExample)
JP (1) JPS58171832A (enExample)
DE (1) DE3278842D1 (enExample)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8103649A (nl) * 1981-08-03 1983-03-01 Philips Nv Halfgeleiderinrichting en werkwijze voor het vervaardigen van de halfgeleiderinrichting.
JPS5965481A (ja) * 1982-10-06 1984-04-13 Nec Corp 半導体装置
FR2566179B1 (fr) * 1984-06-14 1986-08-22 Commissariat Energie Atomique Procede d'autopositionnement d'un oxyde de champ localise par rapport a une tranchee d'isolement
US4538343A (en) * 1984-06-15 1985-09-03 Texas Instruments Incorporated Channel stop isolation technology utilizing two-step etching and selective oxidation with sidewall masking
KR900005124B1 (ko) * 1984-10-17 1990-07-19 가부시기가이샤 히다찌세이사꾸쇼 상보형 반도체장치
US4694561A (en) * 1984-11-30 1987-09-22 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making high-performance trench capacitors for DRAM cells
US4655875A (en) * 1985-03-04 1987-04-07 Hitachi, Ltd. Ion implantation process
DE3650638T2 (de) * 1985-03-22 1998-02-12 Nippon Electric Co Integrierte Halbleiterschaltung mit Isolationszone
JPS61267341A (ja) * 1985-05-22 1986-11-26 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
US4849804A (en) * 1985-09-18 1989-07-18 Harris Corp. Fabrication of integrated circuits incorporating in-process avoidance of circuit-killer particles
JPS6267862A (ja) * 1985-09-19 1987-03-27 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
US4824797A (en) * 1985-10-31 1989-04-25 International Business Machines Corporation Self-aligned channel stop
JPS62112346A (ja) * 1985-11-12 1987-05-23 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
US4826781A (en) * 1986-03-04 1989-05-02 Seiko Epson Corporation Semiconductor device and method of preparation
US4692992A (en) * 1986-06-25 1987-09-15 Rca Corporation Method of forming isolation regions in a semiconductor device
GB2199694A (en) * 1986-12-23 1988-07-13 Philips Electronic Associated A method of manufacturing a semiconductor device
JPS6376330A (ja) * 1986-09-18 1988-04-06 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP2658027B2 (ja) * 1986-11-21 1997-09-30 セイコーエプソン株式会社 半導体装置の製造方法
US4902533A (en) * 1987-06-19 1990-02-20 Motorola, Inc. Method for selectively depositing tungsten on a substrate by using a spin-on metal oxide
JPH01107555A (ja) * 1987-10-20 1989-04-25 Matsushita Electric Ind Co Ltd Ｍｉｓ型半導体装置およびその製造方法
US4822755A (en) * 1988-04-25 1989-04-18 Xerox Corporation Method of fabricating large area semiconductor arrays
JP2635367B2 (ja) * 1988-05-07 1997-07-30 富士通株式会社 半導体装置の製造方法
US4881105A (en) * 1988-06-13 1989-11-14 International Business Machines Corporation Integrated trench-transistor structure and fabrication process
US5021355A (en) * 1989-05-22 1991-06-04 International Business Machines Corporation Method of fabricating cross-point lightly-doped drain-source trench transistor
US5248894A (en) * 1989-10-03 1993-09-28 Harris Corporation Self-aligned channel stop for trench-isolated island
JPH05152516A (ja) * 1991-11-29 1993-06-18 Toshiba Corp 半導体装置とその製造方法
US5391506A (en) * 1992-01-31 1995-02-21 Kawasaki Steel Corporation Manufacturing method for semiconductor devices with source/drain formed in substrate projection.
JP3271453B2 (ja) * 1994-12-28 2002-04-02 三菱電機株式会社 半導体装置における素子分離領域の形成方法
US5643822A (en) * 1995-01-10 1997-07-01 International Business Machines Corporation Method for forming trench-isolated FET devices
US5786263A (en) * 1995-04-04 1998-07-28 Motorola, Inc. Method for forming a trench isolation structure in an integrated circuit
KR0165457B1 (ko) * 1995-10-25 1999-02-01 김광호 트렌치 소자분리 방법
US5844291A (en) * 1996-12-20 1998-12-01 Board Of Regents, The University Of Texas System Wide wavelength range high efficiency avalanche light detector with negative feedback
JPH10214888A (ja) * 1997-01-30 1998-08-11 Nec Yamagata Ltd 半導体装置の製造方法
KR100230817B1 (ko) * 1997-03-24 1999-11-15 김영환 반도체 소자의 셜로우 트렌치 아이솔레이션 방법
US6069057A (en) * 1998-05-18 2000-05-30 Powerchip Semiconductor Corp. Method for fabricating trench-isolation structure
TW391051B (en) * 1998-11-06 2000-05-21 United Microelectronics Corp Method for manufacturing shallow trench isolation structure
GB2347014B (en) * 1999-02-18 2003-04-16 Zetex Plc Semiconductor device
US6524931B1 (en) 1999-07-20 2003-02-25 Motorola, Inc. Method for forming a trench isolation structure in an integrated circuit
DE10131704A1 (de) * 2001-06-29 2003-01-16 Atmel Germany Gmbh Verfahren zur Dotierung eines Halbleiterkörpers
JP2003031679A (ja) * 2001-07-13 2003-01-31 Umc Japan 半導体装置の製造方法
GB0226402D0 (en) * 2002-11-12 2002-12-18 Koninkl Philips Electronics Nv Semiconductor device channel termination
DE10345347A1 (de) * 2003-09-19 2005-04-14 Atmel Germany Gmbh Verfahren zur Herstellung eines DMOS-Transistors mit lateralem Driftregionen-Dotierstoffprofil
US7238976B1 (en) * 2004-06-15 2007-07-03 Qspeed Semiconductor Inc. Schottky barrier rectifier and method of manufacturing the same
US7045410B2 (en) * 2004-07-27 2006-05-16 Texas Instruments Incorporated Method to design for or modulate the CMOS transistor threshold voltage using shallow trench isolation (STI)
KR100720503B1 (ko) * 2005-06-07 2007-05-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2510593C3 (de) * 1975-03-11 1982-03-18 Siemens AG, 1000 Berlin und 8000 München Integrierte Halbleiter-Schaltungsanordnung
US4140558A (en) * 1978-03-02 1979-02-20 Bell Telephone Laboratories, Incorporated Isolation of integrated circuits utilizing selective etching and diffusion
US4394196A (en) * 1980-07-16 1983-07-19 Tokyo Shibaura Denki Kabushiki Kaisha Method of etching, refilling and etching dielectric grooves for isolating micron size device regions
US4433470A (en) * 1981-05-19 1984-02-28 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing semiconductor device utilizing selective etching and diffusion
US4472240A (en) * 1981-08-21 1984-09-18 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
EP0090111B1 (en) 1988-07-27
EP0090111A2 (en) 1983-10-05
EP0090111A3 (en) 1986-01-15
JPS58171832A (ja) 1983-10-08
DE3278842D1 (en) 1988-09-01
US4523369A (en) 1985-06-18

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