JPS5911645A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5911645A
JPS5911645A JP12090582A JP12090582A JPS5911645A JP S5911645 A JPS5911645 A JP S5911645A JP 12090582 A JP12090582 A JP 12090582A JP 12090582 A JP12090582 A JP 12090582A JP S5911645 A JPS5911645 A JP S5911645A
Authority
JP
Japan
Prior art keywords
oxide film
substrate
groove
film
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12090582A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6240857B2 (enExample
Inventor
Kazutoshi Kamibayashi
和利 上林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12090582A priority Critical patent/JPS5911645A/ja
Publication of JPS5911645A publication Critical patent/JPS5911645A/ja
Publication of JPS6240857B2 publication Critical patent/JPS6240857B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP12090582A 1982-07-12 1982-07-12 半導体装置の製造方法 Granted JPS5911645A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12090582A JPS5911645A (ja) 1982-07-12 1982-07-12 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12090582A JPS5911645A (ja) 1982-07-12 1982-07-12 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5911645A true JPS5911645A (ja) 1984-01-21
JPS6240857B2 JPS6240857B2 (enExample) 1987-08-31

Family

ID=14797895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12090582A Granted JPS5911645A (ja) 1982-07-12 1982-07-12 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5911645A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5008180A (en) * 1989-04-07 1991-04-16 Eastman Kodak Company Photographic recording material containing a cyan dye-forming coupler
US5438016A (en) * 1994-03-02 1995-08-01 Micron Semiconductor, Inc. Method of semiconductor device isolation employing polysilicon layer for field oxide formation
US5472904A (en) * 1994-03-02 1995-12-05 Micron Technology, Inc. Thermal trench isolation
US5753962A (en) * 1996-09-16 1998-05-19 Micron Technology, Inc. Texturized polycrystalline silicon to aid field oxide formation
US5756389A (en) * 1993-12-22 1998-05-26 Goldstar Electron Company, Ltd. Method for forming trench isolation for semiconductor device
KR100444607B1 (ko) * 2002-10-24 2004-08-16 주식회사 하이닉스반도체 반도체 소자의 소자분리막 형성방법

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5008180A (en) * 1989-04-07 1991-04-16 Eastman Kodak Company Photographic recording material containing a cyan dye-forming coupler
US5756389A (en) * 1993-12-22 1998-05-26 Goldstar Electron Company, Ltd. Method for forming trench isolation for semiconductor device
US5438016A (en) * 1994-03-02 1995-08-01 Micron Semiconductor, Inc. Method of semiconductor device isolation employing polysilicon layer for field oxide formation
US5472904A (en) * 1994-03-02 1995-12-05 Micron Technology, Inc. Thermal trench isolation
US5837596A (en) * 1994-03-02 1998-11-17 Micron Technology, Inc. Field oxide formation by oxidation of polysilicon layer
US5888881A (en) * 1994-03-02 1999-03-30 Micron Technology, Inc. Method of trench isolation during the formation of a semiconductor device
US5753962A (en) * 1996-09-16 1998-05-19 Micron Technology, Inc. Texturized polycrystalline silicon to aid field oxide formation
US6114218A (en) * 1996-09-16 2000-09-05 Microm Technology, Inc. Texturized polycrystalline silicon to aid field oxide formation
KR100444607B1 (ko) * 2002-10-24 2004-08-16 주식회사 하이닉스반도체 반도체 소자의 소자분리막 형성방법

Also Published As

Publication number Publication date
JPS6240857B2 (enExample) 1987-08-31

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