JPS6240774A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
JPS6240774A
JPS6240774A JP60180884A JP18088485A JPS6240774A JP S6240774 A JPS6240774 A JP S6240774A JP 60180884 A JP60180884 A JP 60180884A JP 18088485 A JP18088485 A JP 18088485A JP S6240774 A JPS6240774 A JP S6240774A
Authority
JP
Japan
Prior art keywords
layer
region
semiconductor memory
silicon nitride
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60180884A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0560670B2 (enrdf_load_stackoverflow
Inventor
Tetsuo Fujii
哲夫 藤井
Toshio Sakakibara
利夫 榊原
Nobuyoshi Sakakibara
伸義 榊原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP60180884A priority Critical patent/JPS6240774A/ja
Priority to US06/887,625 priority patent/US4774556A/en
Publication of JPS6240774A publication Critical patent/JPS6240774A/ja
Publication of JPH0560670B2 publication Critical patent/JPH0560670B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Non-Volatile Memory (AREA)
JP60180884A 1985-07-25 1985-08-16 不揮発性半導体記憶装置 Granted JPS6240774A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60180884A JPS6240774A (ja) 1985-08-16 1985-08-16 不揮発性半導体記憶装置
US06/887,625 US4774556A (en) 1985-07-25 1986-07-21 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60180884A JPS6240774A (ja) 1985-08-16 1985-08-16 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6240774A true JPS6240774A (ja) 1987-02-21
JPH0560670B2 JPH0560670B2 (enrdf_load_stackoverflow) 1993-09-02

Family

ID=16091017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60180884A Granted JPS6240774A (ja) 1985-07-25 1985-08-16 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS6240774A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450534A (en) * 1987-08-21 1989-02-27 Seiko Instr & Electronics Method of forming oxide film of element semiconductor
JPH0249253A (ja) * 1989-05-24 1990-02-19 Hitachi Ltd 磁気記録再生装置
JPH0249254A (ja) * 1989-05-24 1990-02-19 Hitachi Ltd 磁気記録再生装置
DE19524478A1 (de) * 1995-07-05 1997-01-09 Siemens Ag Elektrisch schreib- und löschbare Festwertspeicherzellenanordnung und Verfahren zu deren Herstellung
US6469343B1 (en) 1998-04-02 2002-10-22 Nippon Steel Corporation Multi-level type nonvolatile semiconductor memory device
US6596590B1 (en) 1997-04-25 2003-07-22 Nippon Steel Corporation Method of making multi-level type non-volatile semiconductor memory device
JP2005531146A (ja) * 2002-06-21 2005-10-13 マイクロン　テクノロジー　インコーポレイテッド Ｎｒｏｍメモリセル、メモリアレイ、関連デバイス及び方法
JP2008141196A (ja) * 2006-11-30 2008-06-19 Dongbu Hitek Co Ltd フラッシュメモリ素子

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11039620B2 (en) 2014-02-19 2021-06-22 Corning Incorporated Antimicrobial glass compositions, glasses and polymeric articles incorporating the same
US9622483B2 (en) 2014-02-19 2017-04-18 Corning Incorporated Antimicrobial glass compositions, glasses and polymeric articles incorporating the same
US11039621B2 (en) 2014-02-19 2021-06-22 Corning Incorporated Antimicrobial glass compositions, glasses and polymeric articles incorporating the same

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450534A (en) * 1987-08-21 1989-02-27 Seiko Instr & Electronics Method of forming oxide film of element semiconductor
JPH0249253A (ja) * 1989-05-24 1990-02-19 Hitachi Ltd 磁気記録再生装置
JPH0249254A (ja) * 1989-05-24 1990-02-19 Hitachi Ltd 磁気記録再生装置
DE19524478A1 (de) * 1995-07-05 1997-01-09 Siemens Ag Elektrisch schreib- und löschbare Festwertspeicherzellenanordnung und Verfahren zu deren Herstellung
US5998261A (en) * 1995-07-05 1999-12-07 Siemens Aktiengesellschaft Method of producing a read-only storage cell arrangement
DE19524478C2 (de) * 1995-07-05 2002-03-14 Infineon Technologies Ag Verfahren zur Herstellung einer Festwertspeicherzellenanordnung
US6596590B1 (en) 1997-04-25 2003-07-22 Nippon Steel Corporation Method of making multi-level type non-volatile semiconductor memory device
US6605839B2 (en) 1997-04-25 2003-08-12 Nippon Steel Corporation Multi-level type nonvolatile semiconductor memory device
US6649542B2 (en) 1997-04-25 2003-11-18 Nippon Steel Corporation Multi-level type nonvolatile semiconductor memory device
US6469343B1 (en) 1998-04-02 2002-10-22 Nippon Steel Corporation Multi-level type nonvolatile semiconductor memory device
JP2005531146A (ja) * 2002-06-21 2005-10-13 マイクロン　テクノロジー　インコーポレイテッド Ｎｒｏｍメモリセル、メモリアレイ、関連デバイス及び方法
JP2008141196A (ja) * 2006-11-30 2008-06-19 Dongbu Hitek Co Ltd フラッシュメモリ素子

Also Published As

Publication number Publication date
JPH0560670B2 (enrdf_load_stackoverflow) 1993-09-02

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