JPH0560670B2 - - Google Patents

Info

Publication number
JPH0560670B2
JPH0560670B2 JP60180884A JP18088485A JPH0560670B2 JP H0560670 B2 JPH0560670 B2 JP H0560670B2 JP 60180884 A JP60180884 A JP 60180884A JP 18088485 A JP18088485 A JP 18088485A JP H0560670 B2 JPH0560670 B2 JP H0560670B2
Authority
JP
Japan
Prior art keywords
layer
region
impurity
silicon nitride
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60180884A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6240774A (ja
Inventor
Tetsuo Fujii
Toshio Sakakibara
Nobuyoshi Sakakibara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP60180884A priority Critical patent/JPS6240774A/ja
Priority to US06/887,625 priority patent/US4774556A/en
Publication of JPS6240774A publication Critical patent/JPS6240774A/ja
Publication of JPH0560670B2 publication Critical patent/JPH0560670B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311Gate electrodes for field-effect devices
    • H10D64/411Gate electrodes for field-effect devices for FETs
    • H10D64/511Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Non-Volatile Memory (AREA)
JP60180884A 1985-07-25 1985-08-16 不揮発性半導体記憶装置 Granted JPS6240774A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60180884A JPS6240774A (ja) 1985-08-16 1985-08-16 不揮発性半導体記憶装置
US06/887,625 US4774556A (en) 1985-07-25 1986-07-21 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60180884A JPS6240774A (ja) 1985-08-16 1985-08-16 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6240774A JPS6240774A (ja) 1987-02-21
JPH0560670B2 true JPH0560670B2 (enrdf_load_stackoverflow) 1993-09-02

Family

ID=16091017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60180884A Granted JPS6240774A (ja) 1985-07-25 1985-08-16 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS6240774A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9622483B2 (en) 2014-02-19 2017-04-18 Corning Incorporated Antimicrobial glass compositions, glasses and polymeric articles incorporating the same
US11039620B2 (en) 2014-02-19 2021-06-22 Corning Incorporated Antimicrobial glass compositions, glasses and polymeric articles incorporating the same
US11039621B2 (en) 2014-02-19 2021-06-22 Corning Incorporated Antimicrobial glass compositions, glasses and polymeric articles incorporating the same

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450534A (en) * 1987-08-21 1989-02-27 Seiko Instr & Electronics Method of forming oxide film of element semiconductor
JPH0610897B2 (ja) * 1989-05-24 1994-02-09 株式会社日立製作所 磁気記録再生装置
JPH0612583B2 (ja) * 1989-05-24 1994-02-16 株式会社日立製作所 磁気記録再生装置
DE19524478C2 (de) * 1995-07-05 2002-03-14 Infineon Technologies Ag Verfahren zur Herstellung einer Festwertspeicherzellenanordnung
US6285596B1 (en) 1997-04-25 2001-09-04 Nippon Steel Corporation Multi-level type nonvolatile semiconductor memory device
US6469343B1 (en) 1998-04-02 2002-10-22 Nippon Steel Corporation Multi-level type nonvolatile semiconductor memory device
JP4678760B2 (ja) * 2002-06-21 2011-04-27 マイクロン テクノロジー, インク. メモリセルのアレイ、メモリアレイ、メモリデバイス及び多重状態セルを有するメモリアレイを形成する方法
KR100780249B1 (ko) * 2006-11-30 2007-11-27 동부일렉트로닉스 주식회사 플래시 메모리 소자

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9622483B2 (en) 2014-02-19 2017-04-18 Corning Incorporated Antimicrobial glass compositions, glasses and polymeric articles incorporating the same
US11039620B2 (en) 2014-02-19 2021-06-22 Corning Incorporated Antimicrobial glass compositions, glasses and polymeric articles incorporating the same
US11039621B2 (en) 2014-02-19 2021-06-22 Corning Incorporated Antimicrobial glass compositions, glasses and polymeric articles incorporating the same
US11039619B2 (en) 2014-02-19 2021-06-22 Corning Incorporated Antimicrobial glass compositions, glasses and polymeric articles incorporating the same
US11464232B2 (en) 2014-02-19 2022-10-11 Corning Incorporated Antimicrobial glass compositions, glasses and polymeric articles incorporating the same
US11470847B2 (en) 2014-02-19 2022-10-18 Corning Incorporated Antimicrobial glass compositions, glasses and polymeric articles incorporating the same
US11751570B2 (en) 2014-02-19 2023-09-12 Corning Incorporated Aluminosilicate glass with phosphorus and potassium
US12121030B2 (en) 2014-02-19 2024-10-22 Corning Incorporated Aluminosilicate glass with phosphorus and potassium

Also Published As

Publication number Publication date
JPS6240774A (ja) 1987-02-21

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term