JPH0587030B2 - - Google Patents
Info
- Publication number
- JPH0587030B2 JPH0587030B2 JP60164781A JP16478185A JPH0587030B2 JP H0587030 B2 JPH0587030 B2 JP H0587030B2 JP 60164781 A JP60164781 A JP 60164781A JP 16478185 A JP16478185 A JP 16478185A JP H0587030 B2 JPH0587030 B2 JP H0587030B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- impurity
- floating gate
- operating region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
Landscapes
- Non-Volatile Memory (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60164781A JPS6225459A (ja) | 1985-07-25 | 1985-07-25 | 不揮発性半導体記憶装置 |
US06/887,625 US4774556A (en) | 1985-07-25 | 1986-07-21 | Non-volatile semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60164781A JPS6225459A (ja) | 1985-07-25 | 1985-07-25 | 不揮発性半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6225459A JPS6225459A (ja) | 1987-02-03 |
JPH0587030B2 true JPH0587030B2 (enrdf_load_stackoverflow) | 1993-12-15 |
Family
ID=15799825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60164781A Granted JPS6225459A (ja) | 1985-07-25 | 1985-07-25 | 不揮発性半導体記憶装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6225459A (enrdf_load_stackoverflow) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07120717B2 (ja) * | 1986-05-19 | 1995-12-20 | 日本電気株式会社 | 半導体記憶装置の製造方法 |
JPH0644632B2 (ja) * | 1987-06-29 | 1994-06-08 | 株式会社東芝 | 半導体記憶装置 |
JP2735193B2 (ja) * | 1987-08-25 | 1998-04-02 | 株式会社東芝 | 不揮発性半導体装置及びその製造方法 |
JP3070531B2 (ja) * | 1997-06-27 | 2000-07-31 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
JP3425853B2 (ja) * | 1997-08-29 | 2003-07-14 | Necエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
KR100598049B1 (ko) * | 2004-10-28 | 2006-07-07 | 삼성전자주식회사 | 멀티 비트 비휘발성 메모리 셀을 포함하는 반도체 소자 및그 제조 방법 |
JP5092431B2 (ja) * | 2006-02-03 | 2012-12-05 | 株式会社デンソー | 半導体装置 |
KR100780249B1 (ko) * | 2006-11-30 | 2007-11-27 | 동부일렉트로닉스 주식회사 | 플래시 메모리 소자 |
-
1985
- 1985-07-25 JP JP60164781A patent/JPS6225459A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6225459A (ja) | 1987-02-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |