JPS6229910B2 - - Google Patents

Info

Publication number
JPS6229910B2
JPS6229910B2 JP56191095A JP19109581A JPS6229910B2 JP S6229910 B2 JPS6229910 B2 JP S6229910B2 JP 56191095 A JP56191095 A JP 56191095A JP 19109581 A JP19109581 A JP 19109581A JP S6229910 B2 JPS6229910 B2 JP S6229910B2
Authority
JP
Japan
Prior art keywords
mos transistor
transistor structure
layer
semiconductor substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56191095A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5890762A (ja
Inventor
Hiromi Ito
Masahito Oohashi
Kenji Takayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56191095A priority Critical patent/JPS5890762A/ja
Publication of JPS5890762A publication Critical patent/JPS5890762A/ja
Publication of JPS6229910B2 publication Critical patent/JPS6229910B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56191095A 1981-11-25 1981-11-25 半導体装置 Granted JPS5890762A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56191095A JPS5890762A (ja) 1981-11-25 1981-11-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56191095A JPS5890762A (ja) 1981-11-25 1981-11-25 半導体装置

Publications (2)

Publication Number Publication Date
JPS5890762A JPS5890762A (ja) 1983-05-30
JPS6229910B2 true JPS6229910B2 (enrdf_load_stackoverflow) 1987-06-29

Family

ID=16268765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56191095A Granted JPS5890762A (ja) 1981-11-25 1981-11-25 半導体装置

Country Status (1)

Country Link
JP (1) JPS5890762A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5952861A (ja) * 1982-09-20 1984-03-27 Oki Electric Ind Co Ltd 半導体集積回路装置
JPS63174348A (ja) * 1987-01-14 1988-07-18 Agency Of Ind Science & Technol 積層構造半導体装置
US5006913A (en) * 1988-11-05 1991-04-09 Mitsubishi Denki Kabushiki Kaisha Stacked type semiconductor device

Also Published As

Publication number Publication date
JPS5890762A (ja) 1983-05-30

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