JPS62261155A - 基板装置の製造方法 - Google Patents

基板装置の製造方法

Info

Publication number
JPS62261155A
JPS62261155A JP62074594A JP7459487A JPS62261155A JP S62261155 A JPS62261155 A JP S62261155A JP 62074594 A JP62074594 A JP 62074594A JP 7459487 A JP7459487 A JP 7459487A JP S62261155 A JPS62261155 A JP S62261155A
Authority
JP
Japan
Prior art keywords
layer
tungsten
silicon
substrate
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62074594A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0548935B2 (cg-RX-API-DMAC10.html
Inventor
ラジヴ・ヴァサント・ジョシ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS62261155A publication Critical patent/JPS62261155A/ja
Publication of JPH0548935B2 publication Critical patent/JPH0548935B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/412—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12576—Boride, carbide or nitride component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12583—Component contains compound of adjacent metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12583—Component contains compound of adjacent metal
    • Y10T428/1259—Oxide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826—Group VIB metal-base component
    • Y10T428/1284—W-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24826—Spot bonds connect components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP62074594A 1986-04-30 1987-03-30 基板装置の製造方法 Granted JPS62261155A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US858319 1986-04-30
US06/858,319 US4732801A (en) 1986-04-30 1986-04-30 Graded oxide/nitride via structure and method of fabrication therefor

Publications (2)

Publication Number Publication Date
JPS62261155A true JPS62261155A (ja) 1987-11-13
JPH0548935B2 JPH0548935B2 (cg-RX-API-DMAC10.html) 1993-07-22

Family

ID=25328021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62074594A Granted JPS62261155A (ja) 1986-04-30 1987-03-30 基板装置の製造方法

Country Status (4)

Country Link
US (1) US4732801A (cg-RX-API-DMAC10.html)
EP (1) EP0243723B1 (cg-RX-API-DMAC10.html)
JP (1) JPS62261155A (cg-RX-API-DMAC10.html)
DE (1) DE3781312T2 (cg-RX-API-DMAC10.html)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove
JP2769331B2 (ja) * 1988-09-12 1998-06-25 株式会社日立製作所 半導体集積回路の製造方法
US5108843A (en) * 1988-11-30 1992-04-28 Ricoh Company, Ltd. Thin film semiconductor and process for producing the same
US5310446A (en) * 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film
US5602056A (en) * 1990-03-05 1997-02-11 Vlsi Technology, Inc. Method for forming reliable MOS devices using silicon rich plasma oxide film
US5374833A (en) * 1990-03-05 1994-12-20 Vlsi Technology, Inc. Structure for suppression of field inversion caused by charge build-up in the dielectric
US5763937A (en) * 1990-03-05 1998-06-09 Vlsi Technology, Inc. Device reliability of MOS devices using silicon rich plasma oxide films
US5094900A (en) * 1990-04-13 1992-03-10 Micron Technology, Inc. Self-aligned sloped contact
US5234748A (en) * 1991-06-19 1993-08-10 Ford Motor Company Anti-reflective transparent coating with gradient zone
GB9206086D0 (en) * 1992-03-20 1992-05-06 Philips Electronics Uk Ltd Manufacturing electronic devices comprising,e.g.tfts and mims
JP3167455B2 (ja) * 1992-09-14 2001-05-21 新日本製鐵株式会社 半導体装置及びその製造方法
US5370923A (en) * 1993-02-26 1994-12-06 Advanced Micro Devices, Inc. Photolithography test structure
US5624868A (en) * 1994-04-15 1997-04-29 Micron Technology, Inc. Techniques for improving adhesion of silicon dioxide to titanium
US5512780A (en) * 1994-09-09 1996-04-30 Sun Microsystems, Inc. Inorganic chip-to-package interconnection circuit
US5633202A (en) * 1994-09-30 1997-05-27 Intel Corporation High tensile nitride layer
US5840624A (en) * 1996-03-15 1998-11-24 Taiwan Semiconductor Manufacturing Company, Ltd Reduction of via over etching for borderless contacts
US6344413B1 (en) 1997-12-22 2002-02-05 Motorola Inc. Method for forming a semiconductor device
US6331480B1 (en) 1999-02-18 2001-12-18 Taiwan Semiconductor Manufacturing Company Method to improve adhesion between an overlying oxide hard mask and an underlying low dielectric constant material
US6228777B1 (en) 1999-06-08 2001-05-08 Intel Corporation Integrated circuit with borderless contacts
US6136688A (en) * 1999-10-20 2000-10-24 Vanguard International Semiconductor Corporation High stress oxide to eliminate BPSG/SiN cracking
US20030049464A1 (en) * 2001-09-04 2003-03-13 Afg Industries, Inc. Double silver low-emissivity and solar control coatings
KR100408743B1 (ko) * 2001-09-21 2003-12-11 삼성전자주식회사 양자점 형성 방법 및 이를 이용한 게이트 전극 형성 방법
EP1599894A4 (en) * 2003-03-03 2010-04-28 Lam Res Corp PROCESS FOR IMPROVING PROFILE CONTROL AND N / P LOADING IN DOUBLE-DOTED GATE APPLICATIONS
US7150516B2 (en) * 2004-09-28 2006-12-19 Hewlett-Packard Development Company, L.P. Integrated circuit and method for manufacturing
JP2007005534A (ja) * 2005-06-23 2007-01-11 Toshiba Corp 半導体装置
JP6583064B2 (ja) * 2016-03-09 2019-10-02 東京エレクトロン株式会社 マスク構造体の形成方法及び成膜装置
JP2022146815A (ja) 2021-03-22 2022-10-05 キオクシア株式会社 半導体記憶装置及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117719A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3477872A (en) * 1966-09-21 1969-11-11 Rca Corp Method of depositing refractory metals
US3656995A (en) * 1969-05-02 1972-04-18 Texas Instruments Inc Chemical vapor deposition coatings on titanium
JPS497870B1 (cg-RX-API-DMAC10.html) * 1969-06-06 1974-02-22
US3704166A (en) * 1969-06-30 1972-11-28 Ibm Method for improving adhesion between conductive layers and dielectrics
US3664874A (en) * 1969-12-31 1972-05-23 Nasa Tungsten contacts on silicon substrates
US3785862A (en) * 1970-12-14 1974-01-15 Rca Corp Method for depositing refractory metals
US4180596A (en) * 1977-06-30 1979-12-25 International Business Machines Corporation Method for providing a metal silicide layer on a substrate
US4337476A (en) * 1980-08-18 1982-06-29 Bell Telephone Laboratories, Incorporated Silicon rich refractory silicides as gate metal
US4404235A (en) * 1981-02-23 1983-09-13 Rca Corporation Method for improving adhesion of metal film on a dielectric surface
JPS6042823A (ja) * 1983-08-19 1985-03-07 Toshiba Corp 薄膜形成方法
US4557943A (en) * 1983-10-31 1985-12-10 Advanced Semiconductor Materials America, Inc. Metal-silicide deposition using plasma-enhanced chemical vapor deposition
JPS60138918A (ja) * 1983-12-27 1985-07-23 Toshiba Corp 半導体装置の製造方法
US4629635A (en) * 1984-03-16 1986-12-16 Genus, Inc. Process for depositing a low resistivity tungsten silicon composite film on a substrate
US4619035A (en) * 1984-06-23 1986-10-28 Nippon Gakki Seizo Kabushiki Kaisha Method of manufacturing a semiconductor device including Schottky barrier diodes
US4547432A (en) * 1984-07-31 1985-10-15 The United States Of America As Represented By The United States Department Of Energy Method of bonding silver to glass and mirrors produced according to this method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117719A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
US4732801A (en) 1988-03-22
EP0243723B1 (en) 1992-08-26
EP0243723A3 (en) 1988-11-09
EP0243723A2 (en) 1987-11-04
JPH0548935B2 (cg-RX-API-DMAC10.html) 1993-07-22
DE3781312T2 (de) 1993-04-08
DE3781312D1 (de) 1992-10-01

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