JPS6225451A - 相補型半導体装置の製造方法 - Google Patents
相補型半導体装置の製造方法Info
- Publication number
- JPS6225451A JPS6225451A JP60164612A JP16461285A JPS6225451A JP S6225451 A JPS6225451 A JP S6225451A JP 60164612 A JP60164612 A JP 60164612A JP 16461285 A JP16461285 A JP 16461285A JP S6225451 A JPS6225451 A JP S6225451A
- Authority
- JP
- Japan
- Prior art keywords
- film
- type
- substrate
- contact hole
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 230000000295 complement effect Effects 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 238000002844 melting Methods 0.000 claims abstract description 5
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000009792 diffusion process Methods 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 5
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 4
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 12
- 230000008018 melting Effects 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 230000000630 rising effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 19
- 230000002093 peripheral effect Effects 0.000 description 11
- 239000002131 composite material Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- WURBVZBTWMNKQT-UHFFFAOYSA-N 1-(4-chlorophenoxy)-3,3-dimethyl-1-(1,2,4-triazol-1-yl)butan-2-one Chemical compound C1=NC=NN1C(C(=O)C(C)(C)C)OC1=CC=C(Cl)C=C1 WURBVZBTWMNKQT-UHFFFAOYSA-N 0.000 description 1
- FDDZTBYOCCYZRR-UHFFFAOYSA-N 2-[2-(diethylamino)ethyl]-3-phenyl-3h-isoindol-1-one;phosphoric acid Chemical compound OP(O)(O)=O.C12=CC=CC=C2C(=O)N(CCN(CC)CC)C1C1=CC=CC=C1 FDDZTBYOCCYZRR-UHFFFAOYSA-N 0.000 description 1
- 229910000714 At alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000005862 Whey Substances 0.000 description 1
- 102000007544 Whey Proteins Human genes 0.000 description 1
- 108010046377 Whey Proteins Proteins 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60164612A JPS6225451A (ja) | 1985-07-25 | 1985-07-25 | 相補型半導体装置の製造方法 |
| US06/813,142 US4743564A (en) | 1984-12-28 | 1985-12-24 | Method for manufacturing a complementary MOS type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60164612A JPS6225451A (ja) | 1985-07-25 | 1985-07-25 | 相補型半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6225451A true JPS6225451A (ja) | 1987-02-03 |
| JPH0248146B2 JPH0248146B2 (enrdf_load_stackoverflow) | 1990-10-24 |
Family
ID=15796496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60164612A Granted JPS6225451A (ja) | 1984-12-28 | 1985-07-25 | 相補型半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6225451A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02170555A (ja) * | 1988-10-28 | 1990-07-02 | American Teleph & Telegr Co <Att> | 集積回路およびシリサイド構造を形成するための低温法を含むその製造方法 |
| US6524904B1 (en) | 1999-04-20 | 2003-02-25 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating semiconductor device |
| JP2004519092A (ja) * | 2000-10-30 | 2004-06-24 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | ソース側にホウ素を注入した不揮発性メモリ |
-
1985
- 1985-07-25 JP JP60164612A patent/JPS6225451A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02170555A (ja) * | 1988-10-28 | 1990-07-02 | American Teleph & Telegr Co <Att> | 集積回路およびシリサイド構造を形成するための低温法を含むその製造方法 |
| US6524904B1 (en) | 1999-04-20 | 2003-02-25 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating semiconductor device |
| JP2004519092A (ja) * | 2000-10-30 | 2004-06-24 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | ソース側にホウ素を注入した不揮発性メモリ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0248146B2 (enrdf_load_stackoverflow) | 1990-10-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |