JPS628028B2 - - Google Patents
Info
- Publication number
- JPS628028B2 JPS628028B2 JP15614280A JP15614280A JPS628028B2 JP S628028 B2 JPS628028 B2 JP S628028B2 JP 15614280 A JP15614280 A JP 15614280A JP 15614280 A JP15614280 A JP 15614280A JP S628028 B2 JPS628028 B2 JP S628028B2
- Authority
- JP
- Japan
- Prior art keywords
- oxidation
- substrate
- oxide film
- mask
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 66
- 230000003647 oxidation Effects 0.000 claims description 64
- 238000007254 oxidation reaction Methods 0.000 claims description 64
- 239000000463 material Substances 0.000 claims description 46
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 42
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 42
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 42
- 239000004065 semiconductor Substances 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 2
- 238000002955 isolation Methods 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000000992 sputter etching Methods 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- -1 boron ions Chemical class 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15614280A JPS5779640A (en) | 1980-11-06 | 1980-11-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15614280A JPS5779640A (en) | 1980-11-06 | 1980-11-06 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5779640A JPS5779640A (en) | 1982-05-18 |
| JPS628028B2 true JPS628028B2 (enrdf_load_stackoverflow) | 1987-02-20 |
Family
ID=15621235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15614280A Granted JPS5779640A (en) | 1980-11-06 | 1980-11-06 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5779640A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6222452A (ja) * | 1985-07-22 | 1987-01-30 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US4818235A (en) * | 1987-02-10 | 1989-04-04 | Industry Technology Research Institute | Isolation structures for integrated circuits |
| JP2628511B2 (ja) * | 1987-08-19 | 1997-07-09 | 工業技術院長 | パターン形成方法 |
-
1980
- 1980-11-06 JP JP15614280A patent/JPS5779640A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5779640A (en) | 1982-05-18 |