JPS5779640A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5779640A
JPS5779640A JP15614280A JP15614280A JPS5779640A JP S5779640 A JPS5779640 A JP S5779640A JP 15614280 A JP15614280 A JP 15614280A JP 15614280 A JP15614280 A JP 15614280A JP S5779640 A JPS5779640 A JP S5779640A
Authority
JP
Japan
Prior art keywords
layer
substrate
polycrystalline
film
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15614280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS628028B2 (enrdf_load_stackoverflow
Inventor
Junichi Matsunaga
Hiroshi Nozawa
Hisahiro Matsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15614280A priority Critical patent/JPS5779640A/ja
Publication of JPS5779640A publication Critical patent/JPS5779640A/ja
Publication of JPS628028B2 publication Critical patent/JPS628028B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
JP15614280A 1980-11-06 1980-11-06 Manufacture of semiconductor device Granted JPS5779640A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15614280A JPS5779640A (en) 1980-11-06 1980-11-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15614280A JPS5779640A (en) 1980-11-06 1980-11-06 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5779640A true JPS5779640A (en) 1982-05-18
JPS628028B2 JPS628028B2 (enrdf_load_stackoverflow) 1987-02-20

Family

ID=15621235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15614280A Granted JPS5779640A (en) 1980-11-06 1980-11-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5779640A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6222452A (ja) * 1985-07-22 1987-01-30 Mitsubishi Electric Corp 半導体装置の製造方法
US4818235A (en) * 1987-02-10 1989-04-04 Industry Technology Research Institute Isolation structures for integrated circuits
JPH01132140A (ja) * 1987-08-19 1989-05-24 Agency Of Ind Science & Technol パターン形成方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6222452A (ja) * 1985-07-22 1987-01-30 Mitsubishi Electric Corp 半導体装置の製造方法
US4818235A (en) * 1987-02-10 1989-04-04 Industry Technology Research Institute Isolation structures for integrated circuits
JPH01132140A (ja) * 1987-08-19 1989-05-24 Agency Of Ind Science & Technol パターン形成方法

Also Published As

Publication number Publication date
JPS628028B2 (enrdf_load_stackoverflow) 1987-02-20

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