JPH023306B2 - - Google Patents

Info

Publication number
JPH023306B2
JPH023306B2 JP57012832A JP1283282A JPH023306B2 JP H023306 B2 JPH023306 B2 JP H023306B2 JP 57012832 A JP57012832 A JP 57012832A JP 1283282 A JP1283282 A JP 1283282A JP H023306 B2 JPH023306 B2 JP H023306B2
Authority
JP
Japan
Prior art keywords
material layer
oxidation
oxide film
mask
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57012832A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58131761A (ja
Inventor
Hiroshi Nozawa
Junichi Matsunaga
Hisahiro Matsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57012832A priority Critical patent/JPS58131761A/ja
Publication of JPS58131761A publication Critical patent/JPS58131761A/ja
Publication of JPH023306B2 publication Critical patent/JPH023306B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57012832A 1982-01-29 1982-01-29 半導体装置の製造方法 Granted JPS58131761A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57012832A JPS58131761A (ja) 1982-01-29 1982-01-29 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57012832A JPS58131761A (ja) 1982-01-29 1982-01-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58131761A JPS58131761A (ja) 1983-08-05
JPH023306B2 true JPH023306B2 (enrdf_load_stackoverflow) 1990-01-23

Family

ID=11816345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57012832A Granted JPS58131761A (ja) 1982-01-29 1982-01-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58131761A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2770576B2 (ja) * 1991-01-25 1998-07-02 日本電気株式会社 半導体装置の製造方法
JPH0518435U (ja) * 1991-08-13 1993-03-09 象印マホービン株式会社 真空二重容器
JP3298780B2 (ja) * 1995-08-30 2002-07-08 アルプス電気株式会社 サーマルヘッドおよびサーマルヘッドの製造方法

Also Published As

Publication number Publication date
JPS58131761A (ja) 1983-08-05

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