JPS6211789B2 - - Google Patents

Info

Publication number
JPS6211789B2
JPS6211789B2 JP55156723A JP15672380A JPS6211789B2 JP S6211789 B2 JPS6211789 B2 JP S6211789B2 JP 55156723 A JP55156723 A JP 55156723A JP 15672380 A JP15672380 A JP 15672380A JP S6211789 B2 JPS6211789 B2 JP S6211789B2
Authority
JP
Japan
Prior art keywords
substrate
well
oxidation
oxide film
material layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55156723A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5780757A (en
Inventor
Hiroshi Nozawa
Junichi Matsunaga
Hisahiro Matsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55156723A priority Critical patent/JPS5780757A/ja
Publication of JPS5780757A publication Critical patent/JPS5780757A/ja
Publication of JPS6211789B2 publication Critical patent/JPS6211789B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
JP55156723A 1980-11-07 1980-11-07 Manufacture of complementary mos semiconductor device Granted JPS5780757A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55156723A JPS5780757A (en) 1980-11-07 1980-11-07 Manufacture of complementary mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55156723A JPS5780757A (en) 1980-11-07 1980-11-07 Manufacture of complementary mos semiconductor device

Publications (2)

Publication Number Publication Date
JPS5780757A JPS5780757A (en) 1982-05-20
JPS6211789B2 true JPS6211789B2 (enrdf_load_stackoverflow) 1987-03-14

Family

ID=15633918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55156723A Granted JPS5780757A (en) 1980-11-07 1980-11-07 Manufacture of complementary mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS5780757A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS5780757A (en) 1982-05-20

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