JPS5780757A - Manufacture of complementary mos semiconductor device - Google Patents

Manufacture of complementary mos semiconductor device

Info

Publication number
JPS5780757A
JPS5780757A JP55156723A JP15672380A JPS5780757A JP S5780757 A JPS5780757 A JP S5780757A JP 55156723 A JP55156723 A JP 55156723A JP 15672380 A JP15672380 A JP 15672380A JP S5780757 A JPS5780757 A JP S5780757A
Authority
JP
Japan
Prior art keywords
substrate
well
layer
oxidized
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55156723A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6211789B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Nozawa
Junichi Matsunaga
Hisahiro Matsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55156723A priority Critical patent/JPS5780757A/ja
Publication of JPS5780757A publication Critical patent/JPS5780757A/ja
Publication of JPS6211789B2 publication Critical patent/JPS6211789B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
JP55156723A 1980-11-07 1980-11-07 Manufacture of complementary mos semiconductor device Granted JPS5780757A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55156723A JPS5780757A (en) 1980-11-07 1980-11-07 Manufacture of complementary mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55156723A JPS5780757A (en) 1980-11-07 1980-11-07 Manufacture of complementary mos semiconductor device

Publications (2)

Publication Number Publication Date
JPS5780757A true JPS5780757A (en) 1982-05-20
JPS6211789B2 JPS6211789B2 (enrdf_load_stackoverflow) 1987-03-14

Family

ID=15633918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55156723A Granted JPS5780757A (en) 1980-11-07 1980-11-07 Manufacture of complementary mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS5780757A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6211789B2 (enrdf_load_stackoverflow) 1987-03-14

Similar Documents

Publication Publication Date Title
JPS5444481A (en) Mos type semiconductor device and its manufacture
JPS5780757A (en) Manufacture of complementary mos semiconductor device
JPS55138877A (en) Method of fabricating semiconductor device
JPS5780758A (en) Manufacture of complementary mos semiconductor device
JPS5583267A (en) Method of fabricating semiconductor device
JPS5779642A (en) Manufacture of semiconductor device
JPS5780776A (en) Mos field effect semiconductor device and manufacture thereof
JPS57208156A (en) Manufacture of semiconductor device
JPS5780733A (en) Manufacture of semiconductor device
JPS5491071A (en) Manufacture of silicon gate type field effect transistor
JPS5780760A (en) Manufacture of charge storage type semiconductor memory
JPS5779641A (en) Manufacture of semiconductor device
JPS5678168A (en) Manufacture of semiconductor device
JPS5797646A (en) Manufacture of semiconductor device
JPS5779644A (en) Manufacture of semiconductor device
JPS5691476A (en) Semiconductor
JPS5778149A (en) Manufacture of semiconductor device
JPS5779643A (en) Semiconductor device
JPS5773950A (en) Production of semiconductor device
JPS5490979A (en) Integrated circuit
JPS5710949A (en) Manufacture of semiconductor device
JPS5643766A (en) Manufacture of semiconductor device
JPS5475991A (en) Junction-type field effect transistor
JPS57132339A (en) Manufacture of semiconductor device
JPS57106066A (en) Manufacture of semiconductor device