JPS6223450B2 - - Google Patents

Info

Publication number
JPS6223450B2
JPS6223450B2 JP54059126A JP5912679A JPS6223450B2 JP S6223450 B2 JPS6223450 B2 JP S6223450B2 JP 54059126 A JP54059126 A JP 54059126A JP 5912679 A JP5912679 A JP 5912679A JP S6223450 B2 JPS6223450 B2 JP S6223450B2
Authority
JP
Japan
Prior art keywords
semiconductor film
hydrogen
plasma
film
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54059126A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55151328A (en
Inventor
Saburo Adaka
Yoshinori Imamura
Eiichi Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5912679A priority Critical patent/JPS55151328A/ja
Publication of JPS55151328A publication Critical patent/JPS55151328A/ja
Publication of JPS6223450B2 publication Critical patent/JPS6223450B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP5912679A 1979-05-16 1979-05-16 Method and apparatus for fabricating hydrogen-containing amorphous semiconductor film Granted JPS55151328A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5912679A JPS55151328A (en) 1979-05-16 1979-05-16 Method and apparatus for fabricating hydrogen-containing amorphous semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5912679A JPS55151328A (en) 1979-05-16 1979-05-16 Method and apparatus for fabricating hydrogen-containing amorphous semiconductor film

Publications (2)

Publication Number Publication Date
JPS55151328A JPS55151328A (en) 1980-11-25
JPS6223450B2 true JPS6223450B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-05-22

Family

ID=13104295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5912679A Granted JPS55151328A (en) 1979-05-16 1979-05-16 Method and apparatus for fabricating hydrogen-containing amorphous semiconductor film

Country Status (1)

Country Link
JP (1) JPS55151328A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57152173A (en) * 1981-02-12 1982-09-20 Atlantic Richfield Co Amorphous semiconductor alloy and method of producing same
US4339470A (en) * 1981-02-13 1982-07-13 Rca Corporation Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer
JPS5853869A (ja) * 1981-09-26 1983-03-30 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPS58103178A (ja) * 1981-12-15 1983-06-20 Kanegafuchi Chem Ind Co Ltd 耐熱性薄膜太陽電池
JPS5952883A (ja) * 1982-09-20 1984-03-27 Fuji Electric Corp Res & Dev Ltd 太陽電池
JPS60120515A (ja) * 1983-12-05 1985-06-28 Hitachi Ltd 薄膜形成装置
JPS60131542A (ja) * 1983-12-21 1985-07-13 Hitachi Ltd アモルフアスシリコン製造装置
JPS6199387A (ja) * 1984-10-22 1986-05-17 Fuji Xerox Co Ltd 光電変換素子およびその製造方法
JP2675552B2 (ja) * 1987-05-15 1997-11-12 鐘淵化学工業株式会社 非晶質半導体、非晶質半導体装置およびそれらの製法
JPH0449174Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1988-01-14 1992-11-19
US6720259B2 (en) * 2001-10-02 2004-04-13 Genus, Inc. Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2214204C3 (de) * 1972-03-23 1975-12-11 Nikolaj Alexandrowitsch Michaljow Reaktor zur kontinuierlichen Polymerisation
JPS53103985A (en) * 1977-02-22 1978-09-09 Kokusai Electric Co Ltd Growing film forming method

Also Published As

Publication number Publication date
JPS55151328A (en) 1980-11-25

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