JPS6217389B2 - - Google Patents
Info
- Publication number
- JPS6217389B2 JPS6217389B2 JP53115349A JP11534978A JPS6217389B2 JP S6217389 B2 JPS6217389 B2 JP S6217389B2 JP 53115349 A JP53115349 A JP 53115349A JP 11534978 A JP11534978 A JP 11534978A JP S6217389 B2 JPS6217389 B2 JP S6217389B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- gate
- jfet
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000012535 impurity Substances 0.000 description 11
- 238000000605 extraction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11534978A JPS5541766A (en) | 1978-09-19 | 1978-09-19 | Junction-type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11534978A JPS5541766A (en) | 1978-09-19 | 1978-09-19 | Junction-type field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5541766A JPS5541766A (en) | 1980-03-24 |
| JPS6217389B2 true JPS6217389B2 (US07696358-20100413-C00002.png) | 1987-04-17 |
Family
ID=14660315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11534978A Granted JPS5541766A (en) | 1978-09-19 | 1978-09-19 | Junction-type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5541766A (US07696358-20100413-C00002.png) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4547906A (en) * | 1983-06-27 | 1985-10-22 | Kanebo, Ltd. | Heat retaining article |
| JPS6332092Y2 (US07696358-20100413-C00002.png) | 1985-02-22 | 1988-08-26 | ||
| JP6217158B2 (ja) * | 2013-06-14 | 2017-10-25 | 日亜化学工業株式会社 | 電界効果トランジスタ |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4890683A (US07696358-20100413-C00002.png) * | 1972-03-04 | 1973-11-26 | ||
| JPS5041575A (US07696358-20100413-C00002.png) * | 1973-02-27 | 1975-04-16 |
-
1978
- 1978-09-19 JP JP11534978A patent/JPS5541766A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4890683A (US07696358-20100413-C00002.png) * | 1972-03-04 | 1973-11-26 | ||
| JPS5041575A (US07696358-20100413-C00002.png) * | 1973-02-27 | 1975-04-16 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5541766A (en) | 1980-03-24 |
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