JPS6161545B2 - - Google Patents
Info
- Publication number
- JPS6161545B2 JPS6161545B2 JP1790580A JP1790580A JPS6161545B2 JP S6161545 B2 JPS6161545 B2 JP S6161545B2 JP 1790580 A JP1790580 A JP 1790580A JP 1790580 A JP1790580 A JP 1790580A JP S6161545 B2 JPS6161545 B2 JP S6161545B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystalline silicon
- insulating film
- silicon film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1790580A JPS56115566A (en) | 1980-02-18 | 1980-02-18 | Manufacture of mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1790580A JPS56115566A (en) | 1980-02-18 | 1980-02-18 | Manufacture of mos semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56115566A JPS56115566A (en) | 1981-09-10 |
| JPS6161545B2 true JPS6161545B2 (de) | 1986-12-26 |
Family
ID=11956752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1790580A Granted JPS56115566A (en) | 1980-02-18 | 1980-02-18 | Manufacture of mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56115566A (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02115857A (ja) * | 1988-10-26 | 1990-04-27 | Buyoudou Seisanbu:Kk | Ｐｓ版と複数枚のフイルムとの位置合わせ方法 |
| JPH02115856A (ja) * | 1988-10-26 | 1990-04-27 | Buyoudou Seisanbu:Kk | Ｐｓ版と複数枚のフイルムとの位置合わせ方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01255265A (ja) * | 1988-04-05 | 1989-10-12 | Nec Corp | 半導体装置の製造方法 |
-
1980
- 1980-02-18 JP JP1790580A patent/JPS56115566A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02115857A (ja) * | 1988-10-26 | 1990-04-27 | Buyoudou Seisanbu:Kk | Ｐｓ版と複数枚のフイルムとの位置合わせ方法 |
| JPH02115856A (ja) * | 1988-10-26 | 1990-04-27 | Buyoudou Seisanbu:Kk | Ｐｓ版と複数枚のフイルムとの位置合わせ方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56115566A (en) | 1981-09-10 |
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