JPH0358531B2 - - Google Patents
Info
- Publication number
- JPH0358531B2 JPH0358531B2 JP61253219A JP25321986A JPH0358531B2 JP H0358531 B2 JPH0358531 B2 JP H0358531B2 JP 61253219 A JP61253219 A JP 61253219A JP 25321986 A JP25321986 A JP 25321986A JP H0358531 B2 JPH0358531 B2 JP H0358531B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- polycrystalline silicon
- mask material
- overhang
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 54
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 description 18
- 239000010410 layer Substances 0.000 description 17
- 238000001020 plasma etching Methods 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 206010011732 Cyst Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61253219A JPS6297331A (ja) | 1986-10-24 | 1986-10-24 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61253219A JPS6297331A (ja) | 1986-10-24 | 1986-10-24 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55166930A Division JPS5790940A (en) | 1980-11-27 | 1980-11-27 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6297331A JPS6297331A (ja) | 1987-05-06 |
| JPH0358531B2 true JPH0358531B2 (de) | 1991-09-05 |
Family
ID=17248215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61253219A Granted JPS6297331A (ja) | 1986-10-24 | 1986-10-24 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6297331A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0402482A4 (en) * | 1988-12-28 | 1992-06-24 | Oki Electric Industry Company, Limited | Method of forming pattern |
| JP2537549Y2 (ja) * | 1992-01-28 | 1997-06-04 | 本田技研工業株式会社 | 歯車研削装置のスライドカバー機構 |
-
1986
- 1986-10-24 JP JP61253219A patent/JPS6297331A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6297331A (ja) | 1987-05-06 |
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