JPS6157713B2 - - Google Patents

Info

Publication number
JPS6157713B2
JPS6157713B2 JP54100988A JP10098879A JPS6157713B2 JP S6157713 B2 JPS6157713 B2 JP S6157713B2 JP 54100988 A JP54100988 A JP 54100988A JP 10098879 A JP10098879 A JP 10098879A JP S6157713 B2 JPS6157713 B2 JP S6157713B2
Authority
JP
Japan
Prior art keywords
base layer
junction
layer
impurity concentration
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54100988A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5624972A (en
Inventor
Tsutomu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10098879A priority Critical patent/JPS5624972A/ja
Priority to DE3029836A priority patent/DE3029836C2/de
Priority to CA000357686A priority patent/CA1146284A/en
Publication of JPS5624972A publication Critical patent/JPS5624972A/ja
Priority to US06/707,549 priority patent/US4586070A/en
Publication of JPS6157713B2 publication Critical patent/JPS6157713B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP10098879A 1979-08-07 1979-08-07 Thyristor Granted JPS5624972A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10098879A JPS5624972A (en) 1979-08-07 1979-08-07 Thyristor
DE3029836A DE3029836C2 (de) 1979-08-07 1980-08-06 Thyristor
CA000357686A CA1146284A (en) 1979-08-07 1980-08-06 Thyristor
US06/707,549 US4586070A (en) 1979-08-07 1985-03-05 Thyristor with abrupt anode emitter junction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10098879A JPS5624972A (en) 1979-08-07 1979-08-07 Thyristor

Publications (2)

Publication Number Publication Date
JPS5624972A JPS5624972A (en) 1981-03-10
JPS6157713B2 true JPS6157713B2 (enExample) 1986-12-08

Family

ID=14288689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10098879A Granted JPS5624972A (en) 1979-08-07 1979-08-07 Thyristor

Country Status (4)

Country Link
US (1) US4586070A (enExample)
JP (1) JPS5624972A (enExample)
CA (1) CA1146284A (enExample)
DE (1) DE3029836C2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2135118B (en) * 1983-02-09 1986-10-08 Westinghouse Brake & Signal Thyristors
JPH0658962B2 (ja) * 1986-09-11 1994-08-03 富士電機株式会社 逆導通ゲ−トタ−ンオフサイリスタ
US9741839B1 (en) 2016-06-21 2017-08-22 Powerex, Inc. Gate structure of thyristor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL280849A (enExample) * 1961-07-12 1900-01-01
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3575644A (en) * 1963-01-30 1971-04-20 Gen Electric Semiconductor device with double positive bevel
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
NL6603372A (enExample) * 1965-03-25 1966-09-26
US3428870A (en) * 1965-07-29 1969-02-18 Gen Electric Semiconductor devices
US3449649A (en) * 1966-07-09 1969-06-10 Bbc Brown Boveri & Cie S.c.r. with emitter electrode spaced from semiconductor edge equal to 10 times base thickness
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor
CH520406A (de) * 1970-09-14 1972-03-15 Bbc Brown Boveri & Cie Thyristor
DE2422395C3 (de) * 1974-05-09 1986-03-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor
JPS5942989B2 (ja) * 1977-01-24 1984-10-18 株式会社日立製作所 高耐圧半導体素子およびその製造方法

Also Published As

Publication number Publication date
DE3029836C2 (de) 1985-09-12
DE3029836A1 (de) 1981-02-19
JPS5624972A (en) 1981-03-10
US4586070A (en) 1986-04-29
CA1146284A (en) 1983-05-10

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