CA1154879A - Semiconductor controlled rectifier - Google Patents
Semiconductor controlled rectifierInfo
- Publication number
- CA1154879A CA1154879A CA000364810A CA364810A CA1154879A CA 1154879 A CA1154879 A CA 1154879A CA 000364810 A CA000364810 A CA 000364810A CA 364810 A CA364810 A CA 364810A CA 1154879 A CA1154879 A CA 1154879A
- Authority
- CA
- Canada
- Prior art keywords
- anode
- cathode
- region
- base layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Thyristors (AREA)
Abstract
48,919 ABSTRACT OF THE DISCLOSURE
The present invention is directed to a con-trolled rectifier in which portions of the cathode base region extend into the anode base region and portions of the anode base region are in direct ohmic electrical contact with the anode electrode.
The present invention is directed to a con-trolled rectifier in which portions of the cathode base region extend into the anode base region and portions of the anode base region are in direct ohmic electrical contact with the anode electrode.
Description
~ 115~879 ,. ~
.
.. ~
1 48~919 SEMICON~UCTOR CO~TROLLED RECTIFIER
The pre~ent application ~s related to the ~ol~
lowing Canadian applications:
Serial No. Fil1ng_Date 355~832 July 9, 1980 361,9~7 October 1, 1980 361,939 October 2, 1980 BACKGROUND OF THE INVENTION
Field of the Invention:
The pre~ent inventlon is in the field o~ semi-conductor devices generally and is sp~ci~lcally directed -` to a controlled recti~ler.
~L~:
With re~erence to Fig. 1, there is shown a conventional prior art thyristor.
As shown in Fig. 1, a thyrls~or of this t,ype ha~
- an anode base layer 1 of an n type conductivity, relati~e . low in impur~ty, as for example, 1014 to 1016 atoms/cc; an - anode emitter layer 2 of a p+ type conductivi~y, as ~or ZO example~ 1018 to 5 x 1021 atoms~cc; a cathode layer 3 o~ a p type conductivity, doped as for example, ~rom 1016 to ~:
1017 atoms/cc; a~d a cathode emitter layer 4 of an n+ type conductivit~, dope~ as for example from 10 8 to 5 x 10 `~ atom~/cc. The cathode emitter layer 4 is electrically short-circuited by one portion of said base layer 3.
There is an anod~ electrode 5 co~actlng ohm~cally the bottom ~ur~ace of the anode em$tter layer 2 a~d a oathode electrode 6 contacting ohmic~lly the top sur~ace o~ the t - , ,- . ~ ~ -- . , , ., , , ~
~ 5~3~
.
.
.. ~
1 48~919 SEMICON~UCTOR CO~TROLLED RECTIFIER
The pre~ent application ~s related to the ~ol~
lowing Canadian applications:
Serial No. Fil1ng_Date 355~832 July 9, 1980 361,9~7 October 1, 1980 361,939 October 2, 1980 BACKGROUND OF THE INVENTION
Field of the Invention:
The pre~ent inventlon is in the field o~ semi-conductor devices generally and is sp~ci~lcally directed -` to a controlled recti~ler.
~L~:
With re~erence to Fig. 1, there is shown a conventional prior art thyristor.
As shown in Fig. 1, a thyrls~or of this t,ype ha~
- an anode base layer 1 of an n type conductivity, relati~e . low in impur~ty, as for example, 1014 to 1016 atoms/cc; an - anode emitter layer 2 of a p+ type conductivi~y, as ~or ZO example~ 1018 to 5 x 1021 atoms~cc; a cathode layer 3 o~ a p type conductivity, doped as for example, ~rom 1016 to ~:
1017 atoms/cc; a~d a cathode emitter layer 4 of an n+ type conductivit~, dope~ as for example from 10 8 to 5 x 10 `~ atom~/cc. The cathode emitter layer 4 is electrically short-circuited by one portion of said base layer 3.
There is an anod~ electrode 5 co~actlng ohm~cally the bottom ~ur~ace of the anode em$tter layer 2 a~d a oathode electrode 6 contacting ohmic~lly the top sur~ace o~ the t - , ,- . ~ ~ -- . , , ., , , ~
~ 5~3~
.
2 ~8,919 cathode emitter layer 4 and the short-circuiting portions 8 of the cathode base layer 3. A gate electrode 7 ohm-ically contacts the cathode base layer 3.
The theoretical operation of the thyristor of Fig. l is as Eollows. Upon the conduc-tion of the princi-pal current, a negative bias is applied to the cathode electrode 6 while a positive bias is applied to the anode electrode 5. At that -time, a p-n junction Jl between the n type conductivity anode base layer 1 and the anode emitter layer 2 and a p-n junction J3 between the p type conductivity cathode base layer 3 and the cathode emitter layer 4 are forwardly biased, but a p-n junction J2 be-tween the n type conductivity anode base layer 1 and the p type conductivity base cathode layer 3 is reversely biased. A forward bias is established be-tween the gate electrode 7 and the cathode electrode 6 to effect the injection of holes from the gate electrode 7 and of elec-trons from the cathode electrode 6.
Electrons from the ca-thode emitter layer 4 are injected into the p type conduc-tivity cathode base layer 3 through the cathode electrode 6, whereupon the injected electrons go over or across the junction J2 and are col-lected in the n type conductivity anode base layer 1.
~Ihen the electron concentration wi-thin the anode base layer 1 increases, holes are injected from the anode emit-ter layer 2 to maintain the neutrality. The holes reach the p type conductivity cathode base layer 3 through the n type conductivity anode base layer 1. The holes promote the injection of electrons into the p type conductivity cathode base layer from the cathode emilter layer 4. By continuing this process, a high density of electrons and holes builds up on both sides of the junction J2 and the junction J2 is conver~ed to be forward].y biased whereby the conduction is initiated. This phenomenon is called the "turn-on~, This turn-on h-as a speed determined by the sum of a time interval (tl) for the holes injected from the gate electrode 7 entering the cathode emitter layer 4, a . ~. .
. . ~
: :
The theoretical operation of the thyristor of Fig. l is as Eollows. Upon the conduc-tion of the princi-pal current, a negative bias is applied to the cathode electrode 6 while a positive bias is applied to the anode electrode 5. At that -time, a p-n junction Jl between the n type conductivity anode base layer 1 and the anode emitter layer 2 and a p-n junction J3 between the p type conductivity cathode base layer 3 and the cathode emitter layer 4 are forwardly biased, but a p-n junction J2 be-tween the n type conductivity anode base layer 1 and the p type conductivity base cathode layer 3 is reversely biased. A forward bias is established be-tween the gate electrode 7 and the cathode electrode 6 to effect the injection of holes from the gate electrode 7 and of elec-trons from the cathode electrode 6.
Electrons from the ca-thode emitter layer 4 are injected into the p type conduc-tivity cathode base layer 3 through the cathode electrode 6, whereupon the injected electrons go over or across the junction J2 and are col-lected in the n type conductivity anode base layer 1.
~Ihen the electron concentration wi-thin the anode base layer 1 increases, holes are injected from the anode emit-ter layer 2 to maintain the neutrality. The holes reach the p type conductivity cathode base layer 3 through the n type conductivity anode base layer 1. The holes promote the injection of electrons into the p type conductivity cathode base layer from the cathode emilter layer 4. By continuing this process, a high density of electrons and holes builds up on both sides of the junction J2 and the junction J2 is conver~ed to be forward].y biased whereby the conduction is initiated. This phenomenon is called the "turn-on~, This turn-on h-as a speed determined by the sum of a time interval (tl) for the holes injected from the gate electrode 7 entering the cathode emitter layer 4, a . ~. .
. . ~
: :
3 ~,919 time interval (t?) for electrons from the cathode emitter layer 4 injected into the p type conductivi-ty cathode base layer to reach the n type conductivity anode base layer 1, and a time interval ~t3) which the holes injected from the anode emitter layer 2 to reach the n type conductivity ~ cathode base layer 3.
`~ The application of a reverse bias voltage across ; the cathode electrode ~ and the anode electrode 5 to in-terrupt a current, the conducting state of the thyristor : 10 changes to the blocking state. This is called the turn-off and is determined by a speed at which the holes and electrons remaining in the vicinity of the p-n junction J2 ; disappear to completely restore the forward blocking state : oE the thyristor.
, 15 In the conventional thyristor of Fig. 1, a cur-rent caused from dv/dt is bypassed through the shorted emitter-base regions 8 and no injection of electrons occurs into the n type conductivity cathode emitter layer ~ 4 and resistance -to dv/d-t can be increased. However, ; 20 control speed is low and switching devices high in both speed and withstanding voltage have not been made.
Nominal thicknesses of the layers are as fol-lows: cathode emitter-15 microns, cathode base layer-70 to 90 microns, anode emitter layer-70 to 90 microns, and the anode base layer thickness varies with the operating voltage, nominally the thickness is 1 microns per 10 volts of operating voltage.
SUMMARY OF THE INVENTION
In the present invention there is provided a semiconductor controlled rectifier of such a structure that an anode base layer of n type conductivity has a p type conductivity anode emitter layer and cathode base layer on opposed surfaces thereof and one partion of said p type conductivity cathode base layer contacts directly a cathode electrode so as to electrically short-circuit a cathode emitter layer of n type conductivity provided on this p type conductivity base layer~ said n type conduc-7ity layer base layer is provided on the surface adja-.
.
1, , ~ .
, - . ~ ~ . .
; ~15~
~ ~8,919 cent to said p type conductivity base layer with p -type conductivity gate regions formed in a predetermined pat-;tern, and one portion of -the other surface of said n type `conductivity anode base layer electrically contacts di-rectly an anode electrode so as to electrically short-cir-cuit partially said p type conductivity anode emitter layer.
BRIEF DESCRIPTION OF THE DRAWINGS
For a better understanding of the present inven-tion, reference should be had to the following detaileddescrip-tion and drawings in which:
:Fig. 1 is a sectional view of a typical prior art thyristor; and Fig. 2 is a sectional view of the essential portion of a thyristor illustrating the teachings of the present invention.
DESCRIPTION O~ THE PREFERRED EMBODIMENT
The present invention provides a semiconductor controlled device having both a high control speed and a high withstanding voltage.
Fig. 2 is a sectional view of the essential por-tion of a thyristor illustrating the teachings of the pre-sent invention. Components identical or corresponding to those in Fig. l employ identical reference numerals.
Differences from the s-tructure of the thyristor shown in Fig. l are gate regions 9 of a p type conduc-tivity, ~or example, doped to a concen-tration of from 1018 to 5 x 1021, on one surface of the n type conductivity anode base -layer 1 adjacent to -the p -type conductivity cathode base layer 3a~ and formed into a pectinate or a mesh shape with a longitudinally and transversely fine pattern. The ~ate regions have a relatively high concentration and portions of the other surface of the n type conductivity base layer l opposite to the gate regions 8 contacts -the anode elec-trode 5 directly so as to short-circuit one part on of the anode emitter layer 2 of p type conductivity. Portions 10 of the n type conductivity anode base layer 1 electrically short-circuiting the anode emitter layer 2 are formed . . .
' ` , ' ' ,"' "~ ~ .';' , ,: ` . ~ , ,' . '' 7~
~8,919 through the diffusion of an imp-urity so that they are sub-stantially equidistant from the surface of a p-n junction J4. In t~is case, the p type conductivity cathode base ; layer 3a is formed so as to be significantly thinner than the p type conductivity cathode base layer 3 in ~ig. l and may be formed to an extent on the order of from 1 to 1/50 ; of the conventional structure with a withstanding voltage remaining identical between the two devices. Moreover, the thickness, WB~ of the p type conductivity base layer l~ 3a is dete~mined so as to fulfill the relationship:
Nd a2 < Na WB2 wherein 2a is the spacing between adjacent gate regions 9, Na is the impurity concentration of the p type conductiv-ity cathode base layer 3a, and Nd is the impurity concen-tration of the n type conductivity anode base layer 1.
In the thyristor of this embodiment, holes theo-retically injected from the gate electrode 7 upon turn-on tend to enter the cathode emitter layer 4 through the p type conductivity cathode base layer 3a but since the gate regions 9 are constructed with a high impurity concentra-tion and formed into the pectinate or mesh shape with the : longitudinally and transversely fine pattern, the gate regions 9 become a low resistance and the holes are quick-ly transferred to the entire element through the gate regions 9. Therefore, the injection of electrons from the cathode emitter layer 4 occurs quickly and the injected electrons can pass rapidly through ~he p type conductivity cathode base layer 3a which is thinner than the conven-tional structure to reach the n type conductivity anode base layer 1. As a result, the injection of holes from the anode emitter layer 2 is speeded up and a time inter-val required for the turn-on may be decreased to from 1/2 to 1/1~ of the time for a conventional thyristor.
On the other hand, when a reverse bias voltage is applied across the cathode electrode 6 and the anode electrode 5 upon interrupting a current~ a reverse bias is applied to the junctions Jl and J3 and a forward bias is . ~
.5'~
6 ~8,919 applied to the junction J2 remain inverted. Therefore, in the conventional structure, excessive carriers in the vicinity of the junction H2 must wait for the spolltaneous extraction due to the recombination. In the present in vention because of the number of holes injected from this anode emitter layer 2 is limited by the short-circuiting portion 10 of the anode base layer whereby the quantity of excessive holes can be reduced to a minimum ~oreover, excessive electrons can be quickly removed and the turn-off speed can be increased because the thickness of the ptype conductivity cathode base layer 3a is ~ormed -thinner than in the prior art practice.
Also, as one portion of the anode emit-ter layer 2 opposite to the gate region 9 provided on the n type conductivity base layer 1, is short-circuited by the anode base layer l, the anode base layer 1 opposite to the gate regions 9 can be thickened whereby the withstanding volt-age upon forward biasing can be increased.
As described above, according to the semiconduc-tor controlled rectifier of the present inven-tion, a structure has been made which has the gate regions of the p type conductivity provided on one surface of the n type conductivity base layer and formed into the predeterMined pattern and one portion of the other surface of the n type conductivity base layer contacts directly the anode elec-trode so ~s to electrically short-circuit partly the p type conductivity anode layer. Thus there is the effect that the gate regions can sufficiently reduce the thick-ness of the p type conductivity cathode base layer and still increase the forward withstanding voltage and that a high voltage is not applied to the p type conductivity base layer by means of the electrostatic shield effect due to those gate regions whereby a switching device high in both speed and withstanding voltage can be provided.
In a specific embodiment, the thyristor of Fig.
2 was built in which; region 1 had a thickness of 85 ~m and was doped n-type to a concentration of 3 x 1014 atoms per cc; p-type region 3a was doped to a concentration of : .
. .
1~5~187~
~ ~, 7 ~8,919 1 x 1015 atoms per cc and the spacing between p-n junc-tions J2 and J3 was varied as set forth below.
Spacing BetweenSpacing Between S~)acing BeLween P-N Jlmction~ J2-J3Gates (2a Fig. 2)P-N Junctions J2-J
5(Fi~. 2) Prior Art (Fig. 1 ~, 5.5~m 20~m 32~m
`~ The application of a reverse bias voltage across ; the cathode electrode ~ and the anode electrode 5 to in-terrupt a current, the conducting state of the thyristor : 10 changes to the blocking state. This is called the turn-off and is determined by a speed at which the holes and electrons remaining in the vicinity of the p-n junction J2 ; disappear to completely restore the forward blocking state : oE the thyristor.
, 15 In the conventional thyristor of Fig. 1, a cur-rent caused from dv/dt is bypassed through the shorted emitter-base regions 8 and no injection of electrons occurs into the n type conductivity cathode emitter layer ~ 4 and resistance -to dv/d-t can be increased. However, ; 20 control speed is low and switching devices high in both speed and withstanding voltage have not been made.
Nominal thicknesses of the layers are as fol-lows: cathode emitter-15 microns, cathode base layer-70 to 90 microns, anode emitter layer-70 to 90 microns, and the anode base layer thickness varies with the operating voltage, nominally the thickness is 1 microns per 10 volts of operating voltage.
SUMMARY OF THE INVENTION
In the present invention there is provided a semiconductor controlled rectifier of such a structure that an anode base layer of n type conductivity has a p type conductivity anode emitter layer and cathode base layer on opposed surfaces thereof and one partion of said p type conductivity cathode base layer contacts directly a cathode electrode so as to electrically short-circuit a cathode emitter layer of n type conductivity provided on this p type conductivity base layer~ said n type conduc-7ity layer base layer is provided on the surface adja-.
.
1, , ~ .
, - . ~ ~ . .
; ~15~
~ ~8,919 cent to said p type conductivity base layer with p -type conductivity gate regions formed in a predetermined pat-;tern, and one portion of -the other surface of said n type `conductivity anode base layer electrically contacts di-rectly an anode electrode so as to electrically short-cir-cuit partially said p type conductivity anode emitter layer.
BRIEF DESCRIPTION OF THE DRAWINGS
For a better understanding of the present inven-tion, reference should be had to the following detaileddescrip-tion and drawings in which:
:Fig. 1 is a sectional view of a typical prior art thyristor; and Fig. 2 is a sectional view of the essential portion of a thyristor illustrating the teachings of the present invention.
DESCRIPTION O~ THE PREFERRED EMBODIMENT
The present invention provides a semiconductor controlled device having both a high control speed and a high withstanding voltage.
Fig. 2 is a sectional view of the essential por-tion of a thyristor illustrating the teachings of the pre-sent invention. Components identical or corresponding to those in Fig. l employ identical reference numerals.
Differences from the s-tructure of the thyristor shown in Fig. l are gate regions 9 of a p type conduc-tivity, ~or example, doped to a concen-tration of from 1018 to 5 x 1021, on one surface of the n type conductivity anode base -layer 1 adjacent to -the p -type conductivity cathode base layer 3a~ and formed into a pectinate or a mesh shape with a longitudinally and transversely fine pattern. The ~ate regions have a relatively high concentration and portions of the other surface of the n type conductivity base layer l opposite to the gate regions 8 contacts -the anode elec-trode 5 directly so as to short-circuit one part on of the anode emitter layer 2 of p type conductivity. Portions 10 of the n type conductivity anode base layer 1 electrically short-circuiting the anode emitter layer 2 are formed . . .
' ` , ' ' ,"' "~ ~ .';' , ,: ` . ~ , ,' . '' 7~
~8,919 through the diffusion of an imp-urity so that they are sub-stantially equidistant from the surface of a p-n junction J4. In t~is case, the p type conductivity cathode base ; layer 3a is formed so as to be significantly thinner than the p type conductivity cathode base layer 3 in ~ig. l and may be formed to an extent on the order of from 1 to 1/50 ; of the conventional structure with a withstanding voltage remaining identical between the two devices. Moreover, the thickness, WB~ of the p type conductivity base layer l~ 3a is dete~mined so as to fulfill the relationship:
Nd a2 < Na WB2 wherein 2a is the spacing between adjacent gate regions 9, Na is the impurity concentration of the p type conductiv-ity cathode base layer 3a, and Nd is the impurity concen-tration of the n type conductivity anode base layer 1.
In the thyristor of this embodiment, holes theo-retically injected from the gate electrode 7 upon turn-on tend to enter the cathode emitter layer 4 through the p type conductivity cathode base layer 3a but since the gate regions 9 are constructed with a high impurity concentra-tion and formed into the pectinate or mesh shape with the : longitudinally and transversely fine pattern, the gate regions 9 become a low resistance and the holes are quick-ly transferred to the entire element through the gate regions 9. Therefore, the injection of electrons from the cathode emitter layer 4 occurs quickly and the injected electrons can pass rapidly through ~he p type conductivity cathode base layer 3a which is thinner than the conven-tional structure to reach the n type conductivity anode base layer 1. As a result, the injection of holes from the anode emitter layer 2 is speeded up and a time inter-val required for the turn-on may be decreased to from 1/2 to 1/1~ of the time for a conventional thyristor.
On the other hand, when a reverse bias voltage is applied across the cathode electrode 6 and the anode electrode 5 upon interrupting a current~ a reverse bias is applied to the junctions Jl and J3 and a forward bias is . ~
.5'~
6 ~8,919 applied to the junction J2 remain inverted. Therefore, in the conventional structure, excessive carriers in the vicinity of the junction H2 must wait for the spolltaneous extraction due to the recombination. In the present in vention because of the number of holes injected from this anode emitter layer 2 is limited by the short-circuiting portion 10 of the anode base layer whereby the quantity of excessive holes can be reduced to a minimum ~oreover, excessive electrons can be quickly removed and the turn-off speed can be increased because the thickness of the ptype conductivity cathode base layer 3a is ~ormed -thinner than in the prior art practice.
Also, as one portion of the anode emit-ter layer 2 opposite to the gate region 9 provided on the n type conductivity base layer 1, is short-circuited by the anode base layer l, the anode base layer 1 opposite to the gate regions 9 can be thickened whereby the withstanding volt-age upon forward biasing can be increased.
As described above, according to the semiconduc-tor controlled rectifier of the present inven-tion, a structure has been made which has the gate regions of the p type conductivity provided on one surface of the n type conductivity base layer and formed into the predeterMined pattern and one portion of the other surface of the n type conductivity base layer contacts directly the anode elec-trode so ~s to electrically short-circuit partly the p type conductivity anode layer. Thus there is the effect that the gate regions can sufficiently reduce the thick-ness of the p type conductivity cathode base layer and still increase the forward withstanding voltage and that a high voltage is not applied to the p type conductivity base layer by means of the electrostatic shield effect due to those gate regions whereby a switching device high in both speed and withstanding voltage can be provided.
In a specific embodiment, the thyristor of Fig.
2 was built in which; region 1 had a thickness of 85 ~m and was doped n-type to a concentration of 3 x 1014 atoms per cc; p-type region 3a was doped to a concentration of : .
. .
1~5~187~
~ ~, 7 ~8,919 1 x 1015 atoms per cc and the spacing between p-n junc-tions J2 and J3 was varied as set forth below.
Spacing BetweenSpacing Between S~)acing BeLween P-N Jlmction~ J2-J3Gates (2a Fig. 2)P-N Junctions J2-J
5(Fi~. 2) Prior Art (Fig. 1 ~, 5.5~m 20~m 32~m
4.1~m l5~m 32~m 2.7~m lO~m 32~m ... . ~ - -. , . . : .
: :
: :
Claims (3)
1. A semiconductor controlled rectifier com-prising an anode base layer of n type conductivity having on portions of a first surface thereof a p type conductiv-ity anode emitter layer and on a second surface, opposed to said first surface, a p type cathode base layer, a gate electrode in ohmic electrical contact with the cathode base layer and portions of said p type conductivity cathode base layer being in direct electrical ohmic contact with a cathode electrode, remaining portions of said p type conductivity cathode base layer forming a p-n junction with an n type conductivity cathode emitter region, said n type conduc-tivity cathode emitter region being in direct electrical ohmic contact with said cathode electrode, said n type conductivity anode base layer being provided on the second surface, with p-type conductivity gate regions formed in a predetermined pattern and extending into said anode base region, another portion of said first surface of said anode base layer in direct ohmic electrical contact with an anode electrode, and said anode emitter layer in direct ohmic electrical contact with said anode electrode.
2. A semiconductor controlled rectifier com-prising four adjacent regions of alternating type conduc-tivity with a p-n junction between adjacent region, a first region functioning as a cathode emitter region, a second region functioning as a cathode base region, a third region functioning as an anode base region and a fourth region functioning as an anode emitter region, a cathode electrode 9 48,919 in ohmic electrical contact with the cathode emitter region, an anode electrode in ohmic electrical contact with the anode emitter region, a gate electrode in ohmic electrical contact with the cathode base region, said cathode base region also in ohmic electrical contact with said cathode emitter electrode and said anode base regions also in ohmic electrical contact with said anode emitter electrode.
3. The controlled rectifier of claim 2 in which gate regions extend from said cathode gate region into said anode region, said gate regions being vertically aligned with those portions of said anode base regions in ohmic electrical contact with said anode emitter elec-trode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000364810A CA1154879A (en) | 1980-11-17 | 1980-11-17 | Semiconductor controlled rectifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000364810A CA1154879A (en) | 1980-11-17 | 1980-11-17 | Semiconductor controlled rectifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1154879A true CA1154879A (en) | 1983-10-04 |
Family
ID=4118464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000364810A Expired CA1154879A (en) | 1980-11-17 | 1980-11-17 | Semiconductor controlled rectifier |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA1154879A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4654679A (en) * | 1983-10-05 | 1987-03-31 | Toyo Denki Seizo Kabushiki Kaisha | Static induction thyristor with stepped-doping gate region |
-
1980
- 1980-11-17 CA CA000364810A patent/CA1154879A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4654679A (en) * | 1983-10-05 | 1987-03-31 | Toyo Denki Seizo Kabushiki Kaisha | Static induction thyristor with stepped-doping gate region |
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