CA1146284A - Thyristor - Google Patents

Thyristor

Info

Publication number
CA1146284A
CA1146284A CA000357686A CA357686A CA1146284A CA 1146284 A CA1146284 A CA 1146284A CA 000357686 A CA000357686 A CA 000357686A CA 357686 A CA357686 A CA 357686A CA 1146284 A CA1146284 A CA 1146284A
Authority
CA
Canada
Prior art keywords
base layer
junction
thyristor
layer
emitter layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000357686A
Other languages
English (en)
French (fr)
Inventor
Tsutomu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of CA1146284A publication Critical patent/CA1146284A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
CA000357686A 1979-08-07 1980-08-06 Thyristor Expired CA1146284A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP100988/1979 1979-08-07
JP10098879A JPS5624972A (en) 1979-08-07 1979-08-07 Thyristor

Publications (1)

Publication Number Publication Date
CA1146284A true CA1146284A (en) 1983-05-10

Family

ID=14288689

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000357686A Expired CA1146284A (en) 1979-08-07 1980-08-06 Thyristor

Country Status (4)

Country Link
US (1) US4586070A (enExample)
JP (1) JPS5624972A (enExample)
CA (1) CA1146284A (enExample)
DE (1) DE3029836C2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2135118B (en) * 1983-02-09 1986-10-08 Westinghouse Brake & Signal Thyristors
JPH0658962B2 (ja) * 1986-09-11 1994-08-03 富士電機株式会社 逆導通ゲ−トタ−ンオフサイリスタ
US9741839B1 (en) 2016-06-21 2017-08-22 Powerex, Inc. Gate structure of thyristor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL280849A (enExample) * 1961-07-12 1900-01-01
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3575644A (en) * 1963-01-30 1971-04-20 Gen Electric Semiconductor device with double positive bevel
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
NL6603372A (enExample) * 1965-03-25 1966-09-26
US3428870A (en) * 1965-07-29 1969-02-18 Gen Electric Semiconductor devices
US3449649A (en) * 1966-07-09 1969-06-10 Bbc Brown Boveri & Cie S.c.r. with emitter electrode spaced from semiconductor edge equal to 10 times base thickness
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor
CH520406A (de) * 1970-09-14 1972-03-15 Bbc Brown Boveri & Cie Thyristor
DE2422395C3 (de) * 1974-05-09 1986-03-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor
JPS5942989B2 (ja) * 1977-01-24 1984-10-18 株式会社日立製作所 高耐圧半導体素子およびその製造方法

Also Published As

Publication number Publication date
US4586070A (en) 1986-04-29
JPS6157713B2 (enExample) 1986-12-08
JPS5624972A (en) 1981-03-10
DE3029836C2 (de) 1985-09-12
DE3029836A1 (de) 1981-02-19

Similar Documents

Publication Publication Date Title
US4648174A (en) Method of making high breakdown voltage semiconductor device
US4862229A (en) Semiconductor Schottky devices having improved voltage blocking characteristics
JP3211604B2 (ja) 半導体装置
US4377816A (en) Semiconductor element with zone guard rings
EP0024657B1 (en) Thyristor with continuous emitter shunt
US4517582A (en) Asymmetrical thyristor with highly doped anode base layer region for optimized blocking and forward voltages
EP0572826B1 (de) Thyristor mit Durchbruchbereich
GB1579938A (en) Semiconductor devices
JP2662251B2 (ja) ゲートターンオフサイリスタ
CA1078074A (en) High speed high power two terminal solid state switch fired by dv/dt
US4115798A (en) Semiconductor component having patterned recombination center means with different mean value of recombination centers on anode side from that on cathode side
US4236169A (en) Thyristor device
CA1146284A (en) Thyristor
CA1049661A (en) Semiconductor rectifier
US5491351A (en) Gate turn-off thyristor
US4682199A (en) High voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layer
US6066864A (en) Thyristor with integrated dU/dt protection
EP0129702B1 (en) Voltage breakover protected thyristor having field-containing layer in avalanche voltage breakover zone
EP0556739B1 (en) Gate turn-off thyristor and power convertor using the same
JPH033954B2 (enExample)
US5281832A (en) Bidirectional two-terminal thyristor
US6967356B2 (en) Vertical component with high-voltage strength
US4176371A (en) Thyristor fired by overvoltage
JPS59158561A (ja) アバランシエにより過電圧から自己保護するサイリスタおよびその製造方法
US3286137A (en) Semi-conductor rectifier arrangement having self-protection against overvoltage

Legal Events

Date Code Title Description
MKEX Expiry