NL280849A - - Google Patents
Info
- Publication number
- NL280849A NL280849A NL280849DA NL280849A NL 280849 A NL280849 A NL 280849A NL 280849D A NL280849D A NL 280849DA NL 280849 A NL280849 A NL 280849A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2524361A GB968106A (en) | 1961-07-12 | 1961-07-12 | Improvements in or relating to semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL280849A true NL280849A (enExample) | 1900-01-01 |
Family
ID=10224528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL280849D NL280849A (enExample) | 1961-07-12 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3361943A (enExample) |
| DE (1) | DE1212215C2 (enExample) |
| GB (1) | GB968106A (enExample) |
| NL (1) | NL280849A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3484660A (en) * | 1963-09-20 | 1969-12-16 | Gen Electric | Sealed electrical device |
| FR1466427A (fr) * | 1965-12-03 | 1967-01-20 | Comp Generale Electricite | Capot étanche pour dispositif semi-conducteur |
| DE1589496A1 (de) * | 1967-01-26 | 1970-03-26 | Bbc Brown Boveri & Cie | Halbleiterelement mit abgeschraegter Seitenflaeche und Verfahren zum Herstellen |
| US3643136A (en) * | 1970-05-22 | 1972-02-15 | Gen Electric | Glass passivated double beveled semiconductor device with partially spaced preform |
| DE2358937C3 (de) * | 1973-11-27 | 1976-07-15 | Licentia Gmbh | Thyristor fuer hochspannung im kilovoltbereich |
| DE2537984C3 (de) * | 1975-08-26 | 1981-07-16 | Siemens AG, 1000 Berlin und 8000 München | Thyristor |
| DE2849184A1 (de) | 1978-11-13 | 1980-05-22 | Bbc Brown Boveri & Cie | Verfahren zur herstellung eines scheibenfoermigen silizium-halbleiterbauelementes mit negativer anschraegung |
| JPS5624972A (en) * | 1979-08-07 | 1981-03-10 | Mitsubishi Electric Corp | Thyristor |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA509126A (en) * | 1949-05-28 | 1955-01-11 | Western Electric Company, Incorporated | Semiconductor translating devices |
| GB774388A (en) * | 1954-01-28 | 1957-05-08 | Marconi Wireless Telegraph Co | Improvements in or relating to semi-conducting amplifiers |
| NL218192A (enExample) * | 1956-06-18 | |||
| US2927011A (en) * | 1956-07-26 | 1960-03-01 | Texas Instruments Inc | Etching of semiconductor materials |
| US2980830A (en) * | 1956-08-22 | 1961-04-18 | Shockley William | Junction transistor |
| US2878152A (en) * | 1956-11-28 | 1959-03-17 | Texas Instruments Inc | Grown junction transistors |
| NL113266C (enExample) * | 1957-01-18 | |||
| US2929859A (en) * | 1957-03-12 | 1960-03-22 | Rca Corp | Semiconductor devices |
| US2879190A (en) * | 1957-03-22 | 1959-03-24 | Bell Telephone Labor Inc | Fabrication of silicon devices |
| US3007090A (en) * | 1957-09-04 | 1961-10-31 | Ibm | Back resistance control for junction semiconductor devices |
| FR73531E (fr) * | 1958-04-30 | 1960-08-22 | Telecommunications Sa | Réalisation d'un transistron au germanium obtenu par la méthode de double diffusion |
| FR1197172A (fr) * | 1958-05-28 | 1959-11-27 | Telecommunications Sa | Procédé de fabrication applicable aux transistrons par diffusion utilisables en basse fréquence |
| NL240714A (enExample) * | 1958-07-02 | |||
| US2951191A (en) * | 1958-08-26 | 1960-08-30 | Rca Corp | Semiconductor devices |
| NL242556A (enExample) * | 1958-08-27 | |||
| NL243218A (enExample) * | 1958-12-24 | |||
| FR1228285A (fr) * | 1959-03-11 | 1960-08-29 | Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes | |
| BE589705A (enExample) * | 1959-04-15 | |||
| FR1273633A (fr) * | 1959-11-21 | 1961-10-13 | Siemens Ag | Procédé d'obtention d'éléments semi-conducteurs |
| DE1839161U (de) * | 1960-09-20 | 1961-10-12 | Telefunken Patent | Halbleiteranordnung. |
| BE615177A (enExample) * | 1961-03-17 | |||
| US3255055A (en) * | 1963-03-20 | 1966-06-07 | Hoffman Electronics Corp | Semiconductor device |
-
0
- NL NL280849D patent/NL280849A/xx unknown
-
1961
- 1961-07-12 GB GB2524361A patent/GB968106A/en not_active Expired
-
1962
- 1962-07-10 US US20887162 patent/US3361943A/en not_active Expired - Lifetime
- 1962-07-11 DE DE19621212215 patent/DE1212215C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1212215C2 (de) | 1974-03-28 |
| DE1212215B (de) | 1974-03-28 |
| GB968106A (en) | 1964-08-26 |
| US3361943A (en) | 1968-01-02 |