NL280849A - - Google Patents
Info
- Publication number
- NL280849A NL280849A NL280849DA NL280849A NL 280849 A NL280849 A NL 280849A NL 280849D A NL280849D A NL 280849DA NL 280849 A NL280849 A NL 280849A
- Authority
- NL
- Netherlands
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2924/1301—Thyristor
- H01L2924/13034—Silicon Controlled Rectifier [SCR]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2524361A GB968106A (en) | 1961-07-12 | 1961-07-12 | Improvements in or relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
NL280849A true NL280849A (xx) | 1900-01-01 |
Family
ID=10224528
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL280849D NL280849A (xx) | 1961-07-12 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3361943A (xx) |
DE (1) | DE1212215C2 (xx) |
GB (1) | GB968106A (xx) |
NL (1) | NL280849A (xx) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3484660A (en) * | 1963-09-20 | 1969-12-16 | Gen Electric | Sealed electrical device |
FR1466427A (fr) * | 1965-12-03 | 1967-01-20 | Comp Generale Electricite | Capot étanche pour dispositif semi-conducteur |
DE1589496A1 (de) * | 1967-01-26 | 1970-03-26 | Bbc Brown Boveri & Cie | Halbleiterelement mit abgeschraegter Seitenflaeche und Verfahren zum Herstellen |
US3643136A (en) * | 1970-05-22 | 1972-02-15 | Gen Electric | Glass passivated double beveled semiconductor device with partially spaced preform |
DE2358937C3 (de) * | 1973-11-27 | 1976-07-15 | Licentia Gmbh | Thyristor fuer hochspannung im kilovoltbereich |
DE2537984C3 (de) * | 1975-08-26 | 1981-07-16 | Siemens AG, 1000 Berlin und 8000 München | Thyristor |
JPS5624972A (en) * | 1979-08-07 | 1981-03-10 | Mitsubishi Electric Corp | Thyristor |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA509126A (en) * | 1949-05-28 | 1955-01-11 | Western Electric Company, Incorporated | Semiconductor translating devices |
GB774388A (en) * | 1954-01-28 | 1957-05-08 | Marconi Wireless Telegraph Co | Improvements in or relating to semi-conducting amplifiers |
NL218192A (xx) * | 1956-06-18 | |||
US2927011A (en) * | 1956-07-26 | 1960-03-01 | Texas Instruments Inc | Etching of semiconductor materials |
US2980830A (en) * | 1956-08-22 | 1961-04-18 | Shockley William | Junction transistor |
US2878152A (en) * | 1956-11-28 | 1959-03-17 | Texas Instruments Inc | Grown junction transistors |
NL113266C (xx) * | 1957-01-18 | |||
US2929859A (en) * | 1957-03-12 | 1960-03-22 | Rca Corp | Semiconductor devices |
US2879190A (en) * | 1957-03-22 | 1959-03-24 | Bell Telephone Labor Inc | Fabrication of silicon devices |
US3007090A (en) * | 1957-09-04 | 1961-10-31 | Ibm | Back resistance control for junction semiconductor devices |
FR73531E (fr) * | 1958-04-30 | 1960-08-22 | Telecommunications Sa | Réalisation d'un transistron au germanium obtenu par la méthode de double diffusion |
FR1197172A (fr) * | 1958-05-28 | 1959-11-27 | Telecommunications Sa | Procédé de fabrication applicable aux transistrons par diffusion utilisables en basse fréquence |
NL240714A (xx) * | 1958-07-02 | |||
US2951191A (en) * | 1958-08-26 | 1960-08-30 | Rca Corp | Semiconductor devices |
NL242556A (xx) * | 1958-08-27 | |||
NL243218A (xx) * | 1958-12-24 | |||
FR1228285A (fr) * | 1959-03-11 | 1960-08-29 | Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes | |
NL122784C (xx) * | 1959-04-15 | |||
FR1273633A (fr) * | 1959-11-21 | 1961-10-13 | Siemens Ag | Procédé d'obtention d'éléments semi-conducteurs |
DE1839161U (de) * | 1960-09-20 | 1961-10-12 | Telefunken Patent | Halbleiteranordnung. |
NL276059A (xx) * | 1961-03-17 | |||
US3255055A (en) * | 1963-03-20 | 1966-06-07 | Hoffman Electronics Corp | Semiconductor device |
-
0
- NL NL280849D patent/NL280849A/xx unknown
-
1961
- 1961-07-12 GB GB2524361A patent/GB968106A/en not_active Expired
-
1962
- 1962-07-10 US US20887162 patent/US3361943A/en not_active Expired - Lifetime
- 1962-07-11 DE DE19621212215 patent/DE1212215C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1212215B (de) | 1974-03-28 |
US3361943A (en) | 1968-01-02 |
DE1212215C2 (de) | 1974-03-28 |
GB968106A (en) | 1964-08-26 |