NL218192A - - Google Patents
Info
- Publication number
- NL218192A NL218192A NL218192DA NL218192A NL 218192 A NL218192 A NL 218192A NL 218192D A NL218192D A NL 218192DA NL 218192 A NL218192 A NL 218192A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US591824A US2846340A (en) | 1956-06-18 | 1956-06-18 | Semiconductor devices and method of making same |
Publications (1)
Publication Number | Publication Date |
---|---|
NL218192A true NL218192A (xx) |
Family
ID=24368099
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL111788D NL111788C (xx) | 1956-06-18 | ||
NL218192D NL218192A (xx) | 1956-06-18 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL111788D NL111788C (xx) | 1956-06-18 |
Country Status (6)
Country | Link |
---|---|
US (1) | US2846340A (xx) |
BE (1) | BE558436A (xx) |
DE (1) | DE1073632B (xx) |
FR (1) | FR1176057A (xx) |
GB (1) | GB867413A (xx) |
NL (2) | NL218192A (xx) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3211970A (en) * | 1957-05-06 | 1965-10-12 | Rca Corp | Semiconductor devices |
BE574814A (xx) * | 1958-01-16 | |||
FR1193194A (fr) * | 1958-03-12 | 1959-10-30 | Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions | |
US3132057A (en) * | 1959-01-29 | 1964-05-05 | Raytheon Co | Graded energy gap semiconductive device |
GB921367A (en) * | 1959-04-06 | 1963-03-20 | Standard Telephones Cables Ltd | Semiconductor device and method of manufacture |
NL122784C (xx) * | 1959-04-15 | |||
US3005735A (en) * | 1959-07-24 | 1961-10-24 | Philco Corp | Method of fabricating semiconductor devices comprising cadmium-containing contacts |
US3028529A (en) * | 1959-08-26 | 1962-04-03 | Bendix Corp | Semiconductor diode |
DE1211336B (de) * | 1960-02-12 | 1966-02-24 | Shindengen Electric Mfg | Halbleitergleichrichter mit zwei Schichten von verschiedenem spezifischem Widerstand |
US3096219A (en) * | 1960-05-02 | 1963-07-02 | Rca Corp | Semiconductor devices |
NL264273A (xx) * | 1960-05-02 | |||
US3070477A (en) * | 1960-10-03 | 1962-12-25 | Mandelkorn Joseph | Method of making a gallium sulfide dioxide |
US3139599A (en) * | 1960-12-09 | 1964-06-30 | Texas Instruments Inc | Infrared detector with pn junctions in indium antimonide |
US3176204A (en) * | 1960-12-22 | 1965-03-30 | Raytheon Co | Device composed of different semiconductive materials |
US3148094A (en) * | 1961-03-13 | 1964-09-08 | Texas Instruments Inc | Method of producing junctions by a relocation process |
US3210624A (en) * | 1961-04-24 | 1965-10-05 | Monsanto Co | Article having a silicon carbide substrate with an epitaxial layer of boron phosphide |
NL280641A (xx) * | 1961-07-07 | |||
NL280849A (xx) * | 1961-07-12 | 1900-01-01 | ||
US3262825A (en) * | 1961-12-29 | 1966-07-26 | Bell Telephone Labor Inc | Method for etching crystals of group iii(a)-v(a) compounds and etchant used therefor |
US3275539A (en) * | 1962-11-09 | 1966-09-27 | North American Phillips Compan | Method of manufacturing semiconductor devices |
US3239393A (en) * | 1962-12-31 | 1966-03-08 | Ibm | Method for producing semiconductor articles |
US3255055A (en) * | 1963-03-20 | 1966-06-07 | Hoffman Electronics Corp | Semiconductor device |
US3293092A (en) * | 1964-03-17 | 1966-12-20 | Ibm | Semiconductor device fabrication |
SE313623B (xx) * | 1965-01-30 | 1969-08-18 | Asea Ab | |
US3484854A (en) * | 1966-10-17 | 1969-12-16 | Westinghouse Electric Corp | Processing semiconductor materials |
CN112143938B (zh) * | 2020-09-25 | 2021-11-19 | 先导薄膜材料(广东)有限公司 | 砷化镉的制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE486170A (xx) * | 1948-02-26 | |||
GB707008A (en) * | 1948-10-01 | 1954-04-07 | Licentia Gmbh | Electric un-symmetrically conductive systems, particularly dry-plate rectifiers |
FR1098372A (fr) * | 1953-05-22 | 1955-07-25 | Rca Corp | Dispositifs semi-conducteurs |
US2759861A (en) * | 1954-09-22 | 1956-08-21 | Bell Telephone Labor Inc | Process of making photoconductive compounds |
-
0
- BE BE558436D patent/BE558436A/xx unknown
- NL NL111788D patent/NL111788C/xx active
- NL NL218192D patent/NL218192A/xx unknown
- DE DENDAT1073632D patent/DE1073632B/de active Pending
-
1956
- 1956-06-18 US US591824A patent/US2846340A/en not_active Expired - Lifetime
-
1957
- 1957-06-04 GB GB17784/57A patent/GB867413A/en not_active Expired
- 1957-06-15 FR FR1176057D patent/FR1176057A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US2846340A (en) | 1958-08-05 |
FR1176057A (fr) | 1959-04-03 |
BE558436A (xx) | |
GB867413A (en) | 1961-05-10 |
NL111788C (xx) | |
DE1073632B (de) | 1960-01-21 |