NL218192A - - Google Patents

Info

Publication number
NL218192A
NL218192A NL218192DA NL218192A NL 218192 A NL218192 A NL 218192A NL 218192D A NL218192D A NL 218192DA NL 218192 A NL218192 A NL 218192A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL218192A publication Critical patent/NL218192A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • H01L21/30612Etching of AIIIBV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
NL218192D 1956-06-18 NL218192A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US591824A US2846340A (en) 1956-06-18 1956-06-18 Semiconductor devices and method of making same

Publications (1)

Publication Number Publication Date
NL218192A true NL218192A (xx)

Family

ID=24368099

Family Applications (2)

Application Number Title Priority Date Filing Date
NL111788D NL111788C (xx) 1956-06-18
NL218192D NL218192A (xx) 1956-06-18

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL111788D NL111788C (xx) 1956-06-18

Country Status (6)

Country Link
US (1) US2846340A (xx)
BE (1) BE558436A (xx)
DE (1) DE1073632B (xx)
FR (1) FR1176057A (xx)
GB (1) GB867413A (xx)
NL (2) NL218192A (xx)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3211970A (en) * 1957-05-06 1965-10-12 Rca Corp Semiconductor devices
BE574814A (xx) * 1958-01-16
FR1193194A (fr) * 1958-03-12 1959-10-30 Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions
US3132057A (en) * 1959-01-29 1964-05-05 Raytheon Co Graded energy gap semiconductive device
GB921367A (en) * 1959-04-06 1963-03-20 Standard Telephones Cables Ltd Semiconductor device and method of manufacture
NL122784C (xx) * 1959-04-15
US3005735A (en) * 1959-07-24 1961-10-24 Philco Corp Method of fabricating semiconductor devices comprising cadmium-containing contacts
US3028529A (en) * 1959-08-26 1962-04-03 Bendix Corp Semiconductor diode
DE1211336B (de) * 1960-02-12 1966-02-24 Shindengen Electric Mfg Halbleitergleichrichter mit zwei Schichten von verschiedenem spezifischem Widerstand
US3096219A (en) * 1960-05-02 1963-07-02 Rca Corp Semiconductor devices
NL264273A (xx) * 1960-05-02
US3070477A (en) * 1960-10-03 1962-12-25 Mandelkorn Joseph Method of making a gallium sulfide dioxide
US3139599A (en) * 1960-12-09 1964-06-30 Texas Instruments Inc Infrared detector with pn junctions in indium antimonide
US3176204A (en) * 1960-12-22 1965-03-30 Raytheon Co Device composed of different semiconductive materials
US3148094A (en) * 1961-03-13 1964-09-08 Texas Instruments Inc Method of producing junctions by a relocation process
US3210624A (en) * 1961-04-24 1965-10-05 Monsanto Co Article having a silicon carbide substrate with an epitaxial layer of boron phosphide
NL280641A (xx) * 1961-07-07
NL280849A (xx) * 1961-07-12 1900-01-01
US3262825A (en) * 1961-12-29 1966-07-26 Bell Telephone Labor Inc Method for etching crystals of group iii(a)-v(a) compounds and etchant used therefor
US3275539A (en) * 1962-11-09 1966-09-27 North American Phillips Compan Method of manufacturing semiconductor devices
US3239393A (en) * 1962-12-31 1966-03-08 Ibm Method for producing semiconductor articles
US3255055A (en) * 1963-03-20 1966-06-07 Hoffman Electronics Corp Semiconductor device
US3293092A (en) * 1964-03-17 1966-12-20 Ibm Semiconductor device fabrication
SE313623B (xx) * 1965-01-30 1969-08-18 Asea Ab
US3484854A (en) * 1966-10-17 1969-12-16 Westinghouse Electric Corp Processing semiconductor materials
CN112143938B (zh) * 2020-09-25 2021-11-19 先导薄膜材料(广东)有限公司 砷化镉的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE486170A (xx) * 1948-02-26
GB707008A (en) * 1948-10-01 1954-04-07 Licentia Gmbh Electric un-symmetrically conductive systems, particularly dry-plate rectifiers
FR1098372A (fr) * 1953-05-22 1955-07-25 Rca Corp Dispositifs semi-conducteurs
US2759861A (en) * 1954-09-22 1956-08-21 Bell Telephone Labor Inc Process of making photoconductive compounds

Also Published As

Publication number Publication date
US2846340A (en) 1958-08-05
FR1176057A (fr) 1959-04-03
BE558436A (xx)
GB867413A (en) 1961-05-10
NL111788C (xx)
DE1073632B (de) 1960-01-21

Similar Documents

Publication Publication Date Title
AT197311B (xx)
AT202855B (xx)
FR1194075A (xx)
AT199361B (xx)
AT198114B (xx)
AT202354B (xx)
AT194202B (xx)
AT202279B (xx)
AT201309B (xx)
AT195843B (xx)
AT213780B (xx)
AT197702B (xx)
AT196732B (xx)
AT198039B (xx)
AT198843B (xx)
AT196060B (xx)
AT195165B (xx)
AT196778B (xx)
AT196779B (xx)
AT196945B (xx)
AT197107B (xx)
AT193789B (xx)
AT195164B (xx)
AT198038B (xx)
AT197110B (xx)