SE313623B - - Google Patents

Info

Publication number
SE313623B
SE313623B SE1258/65A SE125865A SE313623B SE 313623 B SE313623 B SE 313623B SE 1258/65 A SE1258/65 A SE 1258/65A SE 125865 A SE125865 A SE 125865A SE 313623 B SE313623 B SE 313623B
Authority
SE
Sweden
Application number
SE1258/65A
Inventor
E Spicar
P Svedberg
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Priority to SE1258/65A priority Critical patent/SE313623B/xx
Priority to DE19661539625 priority patent/DE1539625B1/de
Priority to NL6600773A priority patent/NL6600773A/xx
Priority to US523171A priority patent/US3405332A/en
Priority to CH115866A priority patent/CH444973A/de
Priority to FR47485A priority patent/FR1466026A/fr
Priority to GB3859/66A priority patent/GB1132824A/en
Publication of SE313623B publication Critical patent/SE313623B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Rectifiers (AREA)
SE1258/65A 1965-01-30 1965-01-30 SE313623B (xx)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SE1258/65A SE313623B (xx) 1965-01-30 1965-01-30
DE19661539625 DE1539625B1 (de) 1965-01-30 1966-01-20 Schaltungsanordnung zum betrieb eines steuerbaren halbleiter bauelementes und steuerbares halbleiterbauelement fuer diese schaltungsanordnung
NL6600773A NL6600773A (xx) 1965-01-30 1966-01-20
US523171A US3405332A (en) 1965-01-30 1966-01-26 Semi-conductor device with increased reverse and forward blocking voltages
CH115866A CH444973A (de) 1965-01-30 1966-01-27 Schaltung mit einer Halbleiteranordnung und einer Spannungsquelle
FR47485A FR1466026A (fr) 1965-01-30 1966-01-27 Dispositif à semi-conducteur supportant des tensions inverses et au blocage plus élevées
GB3859/66A GB1132824A (en) 1965-01-30 1966-01-28 Improvements in semi-conductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE1258/65A SE313623B (xx) 1965-01-30 1965-01-30

Publications (1)

Publication Number Publication Date
SE313623B true SE313623B (xx) 1969-08-18

Family

ID=20257871

Family Applications (1)

Application Number Title Priority Date Filing Date
SE1258/65A SE313623B (xx) 1965-01-30 1965-01-30

Country Status (6)

Country Link
US (1) US3405332A (xx)
CH (1) CH444973A (xx)
DE (1) DE1539625B1 (xx)
GB (1) GB1132824A (xx)
NL (1) NL6600773A (xx)
SE (1) SE313623B (xx)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3638042A (en) * 1969-07-31 1972-01-25 Borg Warner Thyristor with added gate and fast turn-off circuit
JPS5342234B2 (xx) * 1973-02-12 1978-11-09

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL111788C (xx) * 1956-06-18
US2879190A (en) * 1957-03-22 1959-03-24 Bell Telephone Labor Inc Fabrication of silicon devices
FR1213751A (fr) * 1958-10-27 1960-04-04 Telecommunications Sa Procédé de fabrication de transistrons à jonctions n-p-n obtenues par double diffusion
DE1265875B (de) * 1963-01-05 1968-04-11 Licentia Gmbh Steuerbarer Halbleitergleichrichter
US3307049A (en) * 1963-12-20 1967-02-28 Siemens Ag Turnoff-controllable thyristor and method of its operation

Also Published As

Publication number Publication date
DE1539625B1 (de) 1971-11-11
US3405332A (en) 1968-10-08
NL6600773A (xx) 1966-08-01
CH444973A (de) 1967-10-15
GB1132824A (en) 1968-11-06

Similar Documents

Publication Publication Date Title
JPS5121814B1 (xx)
FR1604550A (xx)
JPS4221621Y1 (xx)
JPS42568Y1 (xx)
JPS4520753Y1 (xx)
JPS432857Y1 (xx)
DE1491453B2 (xx)
JPS444966Y1 (xx)
JPS434122Y1 (xx)
JPS435608Y1 (xx)
JPS435714Y1 (xx)
AU6361565A (xx)
NL6516278A (xx)
BE669830A (xx)
BE675131A (xx)
BE675161A (xx)
NL6510675A (xx)
BE669732A (xx)
BE675186A (xx)
SE313623B (xx)
BE675004A (xx)
BE674954A (xx)
BE674950A (xx)
NL6609434A (xx)
NL6513468A (xx)