GB921367A - Semiconductor device and method of manufacture - Google Patents

Semiconductor device and method of manufacture

Info

Publication number
GB921367A
GB921367A GB1159160A GB1159160A GB921367A GB 921367 A GB921367 A GB 921367A GB 1159160 A GB1159160 A GB 1159160A GB 1159160 A GB1159160 A GB 1159160A GB 921367 A GB921367 A GB 921367A
Authority
GB
United Kingdom
Prior art keywords
junction
sloping surface
semi
rectifier
filament
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1159160A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB921367A publication Critical patent/GB921367A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

921,367. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. April 1, 1960 [April 6, 1959], No. 11591/60. Class 37. A semi-conductor device having a PN or PIN junction has a sloping surface across the junction. Fig. 1 shows a semi-conductor device, which may be an alloyed or diffused junction type PN rectifier. The rectifier 8 has a sloping surface across the face 5 although only the region of the junction may be sloped. This bevelled edge may be produced by ultrasonic techniques or by saw cutting. The bevelled edge is etched to remove surface contaminants, is heated in a vacuum chamber to remove gaseous impurities and is finally coated with a non-porous layer 11 on the sloping surface. The Figure shows the process being carried out. Filament 12 of tungsten is coated with the material to be deposited on the sloping surface when the filament is heated. The coating material is a glass and may be of material taken from quartz, magnesium fluoride, silica and zirconium silicoted. Organic materials such as polystyrene and silicone polymers can be used. An arrangement is described (Fig. 3, not shown) in which a PIN diffused junction silicon rectifier the slope of the face of which to the horizontal is between one and five degrees. The Specification also refers to bevelling the junction area of transistors and to using germanium instea odf silicon.
GB1159160A 1959-04-06 1960-04-01 Semiconductor device and method of manufacture Expired GB921367A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80427859A 1959-04-06 1959-04-06

Publications (1)

Publication Number Publication Date
GB921367A true GB921367A (en) 1963-03-20

Family

ID=25188592

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1159160A Expired GB921367A (en) 1959-04-06 1960-04-01 Semiconductor device and method of manufacture

Country Status (2)

Country Link
DE (1) DE1137140B (en)
GB (1) GB921367A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3287182A (en) * 1963-09-25 1966-11-22 Licentia Gmbh Semiconductor arrangement
DE1292756B (en) * 1964-04-25 1969-04-17 Siemens Ag Method for increasing the maximum reverse voltage of a planar pn transition area of a semiconductor component, which is at an angle deviating from 90 degrees

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4412242A (en) * 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE969464C (en) * 1953-05-01 1958-06-04 Philips Nv Transistor with a semiconducting body, e.g. from germanium
GB774388A (en) * 1954-01-28 1957-05-08 Marconi Wireless Telegraph Co Improvements in or relating to semi-conducting amplifiers
NL207969A (en) * 1955-06-28
BE558436A (en) * 1956-06-18
NL106110C (en) * 1956-08-24
NL230243A (en) * 1957-08-07

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3287182A (en) * 1963-09-25 1966-11-22 Licentia Gmbh Semiconductor arrangement
DE1292756B (en) * 1964-04-25 1969-04-17 Siemens Ag Method for increasing the maximum reverse voltage of a planar pn transition area of a semiconductor component, which is at an angle deviating from 90 degrees

Also Published As

Publication number Publication date
DE1137140B (en) 1962-09-27

Similar Documents

Publication Publication Date Title
GB1170016A (en) Improvements in or relating to the manufacture of semiconductor components
GB1400313A (en) Method of producing semiconductor device
GB921367A (en) Semiconductor device and method of manufacture
GB968106A (en) Improvements in or relating to semiconductor devices
TW430903B (en) Silicon wafer, and method of manufacturing the same
GB1066911A (en) Semiconductor devices
JPS577923A (en) Manufacture of receiving table for processing single silicon crystal wafer
JPS56148863A (en) Manufacture of semiconductor device
JPS6420663A (en) Manufacture of semiconductor device
JPS5776860A (en) Semiconductor device and its manufacture
GB1075555A (en) Process for the formation of a layer of a semiconductor material on a crystalline base
GB1265037A (en)
JPS5475273A (en) Manufacture of semiconductor device
GB1260567A (en) Improvements in or relating to semiconductor devices
JPS5544701A (en) Manufacturing transistor
GB973104A (en) Improvements relating to the manufacture of semi-conductor devices
JPS5745256A (en) Manufacture of semiconductor device
JPS5727055A (en) Semiconductor device
JPS57128063A (en) Semiconductor device and manufacture thereof
GB1327710A (en) Method of manufacturing semiconductor components
GB1536763A (en) Manufacture of semiconductor body
JPS5637663A (en) Capacitor
JPS55153348A (en) Manufacture of semiconductor device
JPS5796567A (en) Manufacture of semiconductor device
GB1257942A (en)