FR73531E - Réalisation d'un transistron au germanium obtenu par la méthode de double diffusion - Google Patents

Réalisation d'un transistron au germanium obtenu par la méthode de double diffusion

Info

Publication number
FR73531E
FR73531E FR764426A FR764426A FR73531E FR 73531 E FR73531 E FR 73531E FR 764426 A FR764426 A FR 764426A FR 764426 A FR764426 A FR 764426A FR 73531 E FR73531 E FR 73531E
Authority
FR
France
Prior art keywords
transistron
germanium
realization
diffusion method
double diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR764426A
Other languages
English (en)
Inventor
Rene Deschamps
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Priority to FR764426A priority Critical patent/FR73531E/fr
Application granted granted Critical
Publication of FR73531E publication Critical patent/FR73531E/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
FR764426A 1958-04-30 1958-04-30 Réalisation d'un transistron au germanium obtenu par la méthode de double diffusion Expired FR73531E (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR764426A FR73531E (fr) 1958-04-30 1958-04-30 Réalisation d'un transistron au germanium obtenu par la méthode de double diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR764426A FR73531E (fr) 1958-04-30 1958-04-30 Réalisation d'un transistron au germanium obtenu par la méthode de double diffusion

Publications (1)

Publication Number Publication Date
FR73531E true FR73531E (fr) 1960-08-22

Family

ID=8706381

Family Applications (1)

Application Number Title Priority Date Filing Date
FR764426A Expired FR73531E (fr) 1958-04-30 1958-04-30 Réalisation d'un transistron au germanium obtenu par la méthode de double diffusion

Country Status (1)

Country Link
FR (1) FR73531E (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1212215B (de) * 1961-07-12 1974-03-28 Halbleiterbauelement mit einem plattenfoermigen halbleiterkoerper mit pn-uebergangsflaechen

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1212215B (de) * 1961-07-12 1974-03-28 Halbleiterbauelement mit einem plattenfoermigen halbleiterkoerper mit pn-uebergangsflaechen
DE1212215C2 (de) * 1961-07-12 1974-03-28 Halbleiterbauelement mit einem plattenfoermigen halbleiterkoerper mit pn-uebergangsflaechen

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