DE3029836C2 - Thyristor - Google Patents
ThyristorInfo
- Publication number
- DE3029836C2 DE3029836C2 DE3029836A DE3029836A DE3029836C2 DE 3029836 C2 DE3029836 C2 DE 3029836C2 DE 3029836 A DE3029836 A DE 3029836A DE 3029836 A DE3029836 A DE 3029836A DE 3029836 C2 DE3029836 C2 DE 3029836C2
- Authority
- DE
- Germany
- Prior art keywords
- base layer
- thickness
- thyristor
- diffused
- breakdown voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/192—Base regions of thyristors
- H10D62/206—Cathode base regions of thyristors
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10098879A JPS5624972A (en) | 1979-08-07 | 1979-08-07 | Thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3029836A1 DE3029836A1 (de) | 1981-02-19 |
| DE3029836C2 true DE3029836C2 (de) | 1985-09-12 |
Family
ID=14288689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3029836A Expired DE3029836C2 (de) | 1979-08-07 | 1980-08-06 | Thyristor |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4586070A (enExample) |
| JP (1) | JPS5624972A (enExample) |
| CA (1) | CA1146284A (enExample) |
| DE (1) | DE3029836C2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2135118B (en) * | 1983-02-09 | 1986-10-08 | Westinghouse Brake & Signal | Thyristors |
| JPH0658962B2 (ja) * | 1986-09-11 | 1994-08-03 | 富士電機株式会社 | 逆導通ゲ−トタ−ンオフサイリスタ |
| US9741839B1 (en) | 2016-06-21 | 2017-08-22 | Powerex, Inc. | Gate structure of thyristor |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL280849A (enExample) * | 1961-07-12 | 1900-01-01 | ||
| US3249831A (en) * | 1963-01-04 | 1966-05-03 | Westinghouse Electric Corp | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient |
| US3575644A (en) * | 1963-01-30 | 1971-04-20 | Gen Electric | Semiconductor device with double positive bevel |
| US3370209A (en) * | 1964-08-31 | 1968-02-20 | Gen Electric | Power bulk breakdown semiconductor devices |
| NL6603372A (enExample) * | 1965-03-25 | 1966-09-26 | ||
| US3428870A (en) * | 1965-07-29 | 1969-02-18 | Gen Electric | Semiconductor devices |
| US3449649A (en) * | 1966-07-09 | 1969-06-10 | Bbc Brown Boveri & Cie | S.c.r. with emitter electrode spaced from semiconductor edge equal to 10 times base thickness |
| US3538401A (en) * | 1968-04-11 | 1970-11-03 | Westinghouse Electric Corp | Drift field thyristor |
| CH520406A (de) * | 1970-09-14 | 1972-03-15 | Bbc Brown Boveri & Cie | Thyristor |
| DE2422395C3 (de) * | 1974-05-09 | 1986-03-27 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristor |
| JPS5942989B2 (ja) * | 1977-01-24 | 1984-10-18 | 株式会社日立製作所 | 高耐圧半導体素子およびその製造方法 |
-
1979
- 1979-08-07 JP JP10098879A patent/JPS5624972A/ja active Granted
-
1980
- 1980-08-06 CA CA000357686A patent/CA1146284A/en not_active Expired
- 1980-08-06 DE DE3029836A patent/DE3029836C2/de not_active Expired
-
1985
- 1985-03-05 US US06/707,549 patent/US4586070A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4586070A (en) | 1986-04-29 |
| JPS6157713B2 (enExample) | 1986-12-08 |
| JPS5624972A (en) | 1981-03-10 |
| DE3029836A1 (de) | 1981-02-19 |
| CA1146284A (en) | 1983-05-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAP | Request for examination filed | ||
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) |