JPS6141136B2 - - Google Patents
Info
- Publication number
- JPS6141136B2 JPS6141136B2 JP56150337A JP15033781A JPS6141136B2 JP S6141136 B2 JPS6141136 B2 JP S6141136B2 JP 56150337 A JP56150337 A JP 56150337A JP 15033781 A JP15033781 A JP 15033781A JP S6141136 B2 JPS6141136 B2 JP S6141136B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- oxide film
- layer
- substrate
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W10/0126—
-
- H10W10/0121—
-
- H10W10/13—
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56150337A JPS5850754A (ja) | 1981-09-21 | 1981-09-21 | 選択酸化膜の形成法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56150337A JPS5850754A (ja) | 1981-09-21 | 1981-09-21 | 選択酸化膜の形成法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5850754A JPS5850754A (ja) | 1983-03-25 |
| JPS6141136B2 true JPS6141136B2 (enExample) | 1986-09-12 |
Family
ID=15494794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56150337A Granted JPS5850754A (ja) | 1981-09-21 | 1981-09-21 | 選択酸化膜の形成法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5850754A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0361218A (ja) * | 1989-07-27 | 1991-03-18 | Canon Inc | シート搬送装置 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH078311B2 (ja) * | 1987-03-17 | 1995-02-01 | 株式会社テック | トリマ−付き電気かみそり |
| US6306726B1 (en) | 1999-08-30 | 2001-10-23 | Micron Technology, Inc. | Method of forming field oxide |
-
1981
- 1981-09-21 JP JP56150337A patent/JPS5850754A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0361218A (ja) * | 1989-07-27 | 1991-03-18 | Canon Inc | シート搬送装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5850754A (ja) | 1983-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5399520A (en) | Method for the formation of field oxide film in semiconductor device | |
| US5118641A (en) | Methods for reducing encroachment of the field oxide into the active area on a silicon integrated circuit | |
| JPH02304927A (ja) | 半導体装置の製造方法 | |
| JPS6141136B2 (enExample) | ||
| JPS6174350A (ja) | 半導体装置の製造方法 | |
| JP2679143B2 (ja) | 半導体装置の製造方法 | |
| JPH06326091A (ja) | 半導体素子のフィールド酸化膜の形成方法 | |
| JPS6359538B2 (enExample) | ||
| JPH06163528A (ja) | 半導体装置の製造方法 | |
| JPH0258778B2 (enExample) | ||
| JPH0338733B2 (enExample) | ||
| JPH0744214B2 (ja) | 半導体装置の製造方法 | |
| JPS6213047A (ja) | 半導体装置の製造方法 | |
| JPS59177941A (ja) | 素子分離領域の製造方法 | |
| JPS60128635A (ja) | 素子分離領域の形成方法 | |
| JPH0434298B2 (enExample) | ||
| JPS6136380B2 (enExample) | ||
| KR100216262B1 (ko) | 반도체장치의 소자분리방법 | |
| JPS5994437A (ja) | 半導体装置 | |
| JPS62165949A (ja) | 半導体装置の製造方法 | |
| JPS61176114A (ja) | 半導体装置の製造方法 | |
| JPS6353946A (ja) | 半導体装置の製造方法 | |
| JPS6154257B2 (enExample) | ||
| JPH07153753A (ja) | 半導体装置の製造方法 | |
| JPS5857737A (ja) | 半導体装置の製造方法 |