JPS6137796B2 - - Google Patents
Info
- Publication number
- JPS6137796B2 JPS6137796B2 JP59063452A JP6345284A JPS6137796B2 JP S6137796 B2 JPS6137796 B2 JP S6137796B2 JP 59063452 A JP59063452 A JP 59063452A JP 6345284 A JP6345284 A JP 6345284A JP S6137796 B2 JPS6137796 B2 JP S6137796B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor device
- insulated gate
- electrode
- channel region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 87
- 238000002347 injection Methods 0.000 claims description 20
- 239000007924 injection Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 16
- 230000005669 field effect Effects 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000969 carrier Substances 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims 3
- 108091006146 Channels Proteins 0.000 description 31
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/482,075 US4743952A (en) | 1983-04-04 | 1983-04-04 | Insulated-gate semiconductor device with low on-resistance |
US482075 | 1983-04-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59215767A JPS59215767A (ja) | 1984-12-05 |
JPS6137796B2 true JPS6137796B2 (US06252093-20010626-C00008.png) | 1986-08-26 |
Family
ID=23914547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59063452A Granted JPS59215767A (ja) | 1983-04-04 | 1984-04-02 | オン抵抗の低い絶縁ゲ−ト半導体デバイス |
Country Status (3)
Country | Link |
---|---|
US (1) | US4743952A (US06252093-20010626-C00008.png) |
JP (1) | JPS59215767A (US06252093-20010626-C00008.png) |
DE (1) | DE3411020A1 (US06252093-20010626-C00008.png) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4779123A (en) * | 1985-12-13 | 1988-10-18 | Siliconix Incorporated | Insulated gate transistor array |
US5472888A (en) * | 1988-02-25 | 1995-12-05 | International Rectifier Corporation | Depletion mode power MOSFET with refractory gate and method of making same |
JPH0716009B2 (ja) * | 1988-12-02 | 1995-02-22 | 株式会社日立製作所 | 横型絶縁ゲートバイポーラトランジスタ |
JPH04363069A (ja) * | 1990-09-24 | 1992-12-15 | Nippondenso Co Ltd | 縦型半導体装置 |
US5401980A (en) * | 1991-09-04 | 1995-03-28 | International Business Machines Corporation | 2D/1D junction device as a Coulomb blockade gate |
JPH05283703A (ja) * | 1992-01-16 | 1993-10-29 | Natl Semiconductor Corp <Ns> | Dmost接合絶縁破壊の向上 |
US6110804A (en) * | 1996-12-02 | 2000-08-29 | Semiconductor Components Industries, Llc | Method of fabricating a semiconductor device having a floating field conductor |
JPH10256550A (ja) * | 1997-01-09 | 1998-09-25 | Toshiba Corp | 半導体装置 |
DE102004017723B4 (de) * | 2003-04-10 | 2011-12-08 | Fuji Electric Co., Ltd | In Rückwärtsrichtung sperrendes Halbleiterbauteil und Verfahren zu seiner Herstellung |
WO2013088544A1 (ja) * | 2011-12-15 | 2013-06-20 | 株式会社日立製作所 | 半導体装置および電力変換装置 |
US9911838B2 (en) | 2012-10-26 | 2018-03-06 | Ixys Corporation | IGBT die structure with auxiliary P well terminal |
JP6088401B2 (ja) * | 2013-11-08 | 2017-03-01 | 株式会社豊田中央研究所 | 逆導通igbt |
CN109148305A (zh) * | 2018-09-13 | 2019-01-04 | 深圳市心版图科技有限公司 | 一种功率器件及其制备方法 |
CN109119482A (zh) * | 2018-09-14 | 2019-01-01 | 深圳市心版图科技有限公司 | 一种场效应管及其制作方法 |
CN109119342A (zh) * | 2018-09-14 | 2019-01-01 | 深圳市心版图科技有限公司 | 一种功率器件及其制备方法 |
CN109273522A (zh) * | 2018-09-14 | 2019-01-25 | 深圳市心版图科技有限公司 | 一种场效应管及其制作方法 |
CN109192666A (zh) * | 2018-09-14 | 2019-01-11 | 深圳市心版图科技有限公司 | 一种功率器件及其制备方法 |
CN109192665A (zh) * | 2018-09-14 | 2019-01-11 | 深圳市心版图科技有限公司 | 一种功率器件及其制备方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1471617A (en) * | 1973-06-21 | 1977-04-27 | Sony Corp | Circuits comprising a semiconductor device |
IT1133869B (it) * | 1979-10-30 | 1986-07-24 | Rca Corp | Dispositivo mosfet |
US4455565A (en) * | 1980-02-22 | 1984-06-19 | Rca Corporation | Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode |
US4364073A (en) * | 1980-03-25 | 1982-12-14 | Rca Corporation | Power MOSFET with an anode region |
US4345265A (en) * | 1980-04-14 | 1982-08-17 | Supertex, Inc. | MOS Power transistor with improved high-voltage capability |
DE3103444A1 (de) * | 1981-02-02 | 1982-10-21 | Siemens AG, 1000 Berlin und 8000 München | Vertikal-mis-feldeffekttransistor mit kleinem durchlasswiderstand |
DE3200660A1 (de) * | 1982-01-12 | 1983-07-21 | Siemens AG, 1000 Berlin und 8000 München | Mis-feldeffekttransistor mit ladungstraegerinjektion |
DE3224642A1 (de) * | 1982-07-01 | 1984-01-05 | Siemens AG, 1000 Berlin und 8000 München | Igfet mit injektorzone |
GB2128018A (en) * | 1982-09-22 | 1984-04-18 | Philips Electronic Associated | Insulated-gate field-effect transistors |
US4523111A (en) * | 1983-03-07 | 1985-06-11 | General Electric Company | Normally-off, gate-controlled electrical circuit with low on-resistance |
-
1983
- 1983-04-04 US US06/482,075 patent/US4743952A/en not_active Expired - Lifetime
-
1984
- 1984-03-24 DE DE19843411020 patent/DE3411020A1/de active Granted
- 1984-04-02 JP JP59063452A patent/JPS59215767A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
DE3411020C2 (US06252093-20010626-C00008.png) | 1989-03-23 |
DE3411020A1 (de) | 1984-10-11 |
US4743952A (en) | 1988-05-10 |
JPS59215767A (ja) | 1984-12-05 |
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