WO2013088544A1 - 半導体装置および電力変換装置 - Google Patents
半導体装置および電力変換装置 Download PDFInfo
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
Definitions
- the present invention relates to a semiconductor device, for example, a technique effective when applied to a semiconductor device used in a power conversion device for motor control or the like.
- inverter circuits and converter circuits are used in power converters for high-power equipment used in railways and steelworks from low-power equipment such as air conditioners and microwave ovens.
- an IGBT Insulated Gate Bipolar Transistor
- diode which is a kind of power semiconductor
- Patent Document 1 discloses a semiconductor device 1 in which an IGBT 101 and a PiN diode 102 are integrally formed.
- Non-Patent Documents 1 and 2 below also disclose a semiconductor device in which an IGBT and a diode are built in the same semiconductor substrate.
- collector electrode 500, p layer 100 in low resistance contact with collector electrode 500, n layer 112 having a carrier concentration lower than p layer 100, and drift n ⁇ layer 110 having a carrier concentration lower than n layer 112 are disclosed.
- An IGBT having the following is disclosed.
- Non-Patent Document 3 below also discloses an IGBT having a p layer and an n layer on a collector electrode.
- Non-Patent Document 4 discloses Ge pn junction and tunneling phenomenon
- Non-Patent Document 5 discloses vertical IGBT
- Non-Patent Document 6 discloses diode element recovery. A technique for softening the software is disclosed.
- an object of the present invention is to provide a technique capable of improving the characteristics of a semiconductor device. Specifically, it is to provide a technique for improving the characteristics of a semiconductor device in which an IGBT and a diode are built in the same semiconductor substrate.
- a semiconductor device shown in a representative embodiment is arranged in contact with a semiconductor layer of a first conductivity type and a first surface side of the semiconductor layer in contact with the semiconductor layer.
- a first semiconductor region of a second conductivity type opposite to the first conductivity type, and a groove provided so as to penetrate the first semiconductor region and reach the semiconductor layer via a gate insulating film A gate electrode provided; a second semiconductor region of the first conductivity type provided in contact with the groove on the first surface side of the first semiconductor region; and the first surface side of the semiconductor layer.
- a second high-concentration semiconductor region of two conductivity types, and the first high-concentration semiconductor region Bonding the serial second high-concentration semiconductor region is a tunnel junction.
- a semiconductor device described in a typical embodiment is provided with a semiconductor layer of a first conductivity type, and a part of the first surface side of the semiconductor layer in contact with the semiconductor layer.
- a first semiconductor region of a second conductivity type that is opposite to the first conductivity type, and a portion of the first semiconductor region on the first surface side that is in contact with the first semiconductor region.
- a second high concentration semiconductor region provided in contact with the first high concentration semiconductor, Bonding between band and the second high-concentration semiconductor region is a tunnel junction.
- a semiconductor device shown in a typical embodiment includes a first conductivity type semiconductor layer and the semiconductor layer disposed on the first surface side of the semiconductor layer in contact with the semiconductor layer.
- the first conductivity type disposed in contact with the first semiconductor region of the second conductivity type opposite to the first conductivity type, and the second surface side opposite to the first surface side of the semiconductor layer.
- a first high-concentration semiconductor region, and a second high-concentration semiconductor region of the second conductivity type disposed in contact with the second surface side of the first high-concentration semiconductor region.
- the junction between the concentration semiconductor region and the second high concentration semiconductor region is a tunnel junction.
- the semiconductor device is incorporated as the IGBT and the diode of the power converter having the parallel circuit in which the IGBT and the diode are connected in parallel and connected in the reverse direction in the forward direction, or as the diode. Can do.
- the power conversion device is, for example, connected between a pair of DC terminals, an AC terminal having the same number of AC phases, and the pair of DC terminals, and a switching element and a diode of opposite polarity in parallel. It has a configuration in which two circuits are connected in series, and includes the same number of power conversion units as the number of AC phases connected to AC terminals having different interconnection points of parallel circuits.
- the characteristics of the semiconductor device can be improved.
- FIG. 3 is a main-portion cross-sectional view showing the semiconductor device of First Embodiment; It is a figure which shows the output characteristic of the diode which consists of a high concentration pn junction.
- (A) And (B) is a band figure for demonstrating the conduction mechanism of the electric current which flows between high concentration pn junctions.
- (A) and (B) are band diagrams for explaining the conduction mechanism of current flowing through the pn junction when the impurity concentration of the high-concentration pn junction is greater than 3 ⁇ 10 20 cm ⁇ 3 .
- 7 is a fragmentary cross-sectional view showing the manufacturing process of the semiconductor device of First Embodiment; FIG.
- FIG. 7 is a fragmentary cross-sectional view showing the manufacturing process of the semiconductor device of First Embodiment;
- FIG. 7 is a fragmentary cross-sectional view showing the manufacturing process of the semiconductor device of First Embodiment;
- FIG. 7 is a fragmentary cross-sectional view showing the manufacturing process of the semiconductor device of First Embodiment;
- FIG. 7 is a fragmentary cross-sectional view showing the manufacturing process of the semiconductor device of First Embodiment;
- FIG. 7 is a fragmentary cross-sectional view showing the manufacturing process of the semiconductor device of First Embodiment;
- FIG. 10 is a main-portion cross-sectional view showing the manufacturing process of the semiconductor device of Embodiment 2;
- FIG. 10 is a main-portion cross-sectional view showing the manufacturing process of the semiconductor device of Embodiment 2;
- FIG. 10 is a main-portion cross-sectional view showing the manufacturing process of the semiconductor device of Embodiment 2;
- FIG. 10 is a main-portion cross-sectional view showing the semiconductor device of Embodiment 3;
- FIG. 10 is a main-portion cross-sectional view showing the semiconductor device of Embodiment 4;
- FIG. 10 is a main-portion cross-sectional view showing the semiconductor device of Embodiment 5;
- (A) And (B) is principal part sectional drawing which shows the semiconductor device of Embodiment 6.
- FIG. FIG. 16 is a main-portion cross-sectional view showing the semiconductor device of the seventh embodiment.
- FIG. 22 is a main-portion cross-sectional view showing the semiconductor device of the eighth embodiment. It is a figure which shows the circuit diagram of a three-phase motor.
- FIG. 10 is a main-portion cross-sectional view showing the semiconductor device of Comparative Example 1 of Embodiment 1;
- FIG. 10 is a main-portion cross-sectional view showing the semiconductor device of Comparative Example 2 of Embodiment 1;
- FIG. 10 is a main-portion cross-sectional view showing the semiconductor device of Comparative Example 3 of Embodiment 1; 10 is a graph showing forward output characteristics of the semiconductor devices of Comparative Example 1 and Comparative Example 3.
- the constituent elements are not necessarily indispensable unless otherwise specified or apparently indispensable in principle.
- the shapes when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numbers and the like (including the number, numerical value, quantity, range, etc.).
- hatching may be omitted even in a cross-sectional view in order to make the drawings easy to see. Further, even a plan view may be hatched to make the drawing easy to see.
- FIG. 1 is a cross-sectional view of the main part showing the semiconductor device of the present embodiment.
- the semiconductor device of the present embodiment includes an IGBT (IGBT portion) and a diode (diode portion, high-concentration pn junction portion). It can be said that the semiconductor device is a diode built-in IGBT (reverse conducting IGBT).
- This IGBT has a so-called “trench gate type” structure.
- the IGBT is a kind of power MISFET, and there is a so-called vertical type or horizontal type, which is further classified into a “trench (groove) gate type” or “planar gate type” structure according to the structure of the gate electrode portion. .
- the IGBT of this embodiment is a so-called “vertical type” MISFET and has a structure called “trench gate type”.
- the IGBT is disposed on the surface (first surface, upper surface) side of the substrate (n ⁇ type drift layer 1).
- This IGBT is an n ⁇ -type drift layer 1 serving as a drain region, an n-type source region (n-type semiconductor region, emitter region) 4 serving as a source region, and a p-type serving as a channel region.
- the gate insulating film 3 and the gate electrode 5 are disposed in the trench T.
- the IGBT passes through the n ⁇ -type drift layer 1, the p-type channel region 2 disposed in contact with the first surface side, the p-type channel region 2, and the n ⁇ -type.
- a gate electrode 5 provided in the trench T provided to reach the drift layer 1 via the gate insulating film 3 and an n provided to be in contact with the trench T on the first surface side of the p-type channel region 2
- a mold source region 4 4.
- the diode is disposed on the back surface (second surface, bottom surface) side of the substrate (n ⁇ type drift layer 1).
- This diode has a high concentration n-type region 6 and a high concentration p-type region 7.
- the high-concentration n-type region 6 is disposed in contact with the back surface side of the n ⁇ -type drift layer 1
- the high-concentration p-type region 7 is disposed on the back surface side of the high-concentration n-type region 6.
- the high concentration p-type region 7 is disposed in contact with the back surface side of the high concentration n-type region 6.
- the junction between the high-concentration n-type region 6 and the high-concentration p-type region 7 is a tunnel junction as will be described later.
- the substrate - the surface side of the (n type drift layer 1), n-type source region 4 and the emitter electrode 8 which is electrically connected is disposed, the substrate - high on the back side of the (n type drift layer 1)
- a collector electrode 9 is arranged on the concentration p-type region 7.
- the high-concentration n-type region 6 has, for example, a higher n-type impurity concentration than the n-type source region 4, and the high-concentration p-type region 7 has, for example, a p-type impurity concentration higher than that of the p-type channel region 2. high.
- These impurity concentrations are 1 ⁇ 10 19 cm ⁇ 3 or more at the interface of the pn junction.
- the impurity concentration of the high concentration n-type region 6 is preferably 3 ⁇ 10 20 cm ⁇ 3 or less.
- the multi-function of the semiconductor device can be achieved.
- an IGBT and a diode connected in antiparallel to the IGBT can be configured with one chip [Effect 1].
- Such a chip is suitable for use in a circuit (inverter circuit, power conversion circuit) described in detail in Embodiment 9 (FIG. 21).
- flywheel diodes 601a to 603a and 601b to 603b are associated with the diodes
- IGBTs 701a to 703a and 701b to 703b are associated with the IGBTs.
- a flywheel diode 601b is connected to the IGBT 701b in antiparallel with the IGBT 701b.
- the flywheel diode 601b converts the current flowing in the IGBT 701a to the flywheel diode 601b in antiparallel with the IGBT 701b (lower arm IGBT) whose emitter is connected to the negative power supply terminal 901. By flowing, the energy stored in the coil of the motor 950 is released.
- the flywheel diode 601b of the lower arm When the IGBT 701a of the upper arm is turned on again, the flywheel diode 601b of the lower arm is turned off, and power is supplied to the motor 950 through the IGBT 701a of the upper arm. As described above, the flywheel diode 601b repeats non-conduction and conduction according to whether the IGBT 701a is on or off.
- FIG. 22 is a fragmentary cross-sectional view showing the semiconductor device of Comparative Example 1 of the present embodiment. Also in the semiconductor device of FIG. 22, an IGBT having an n ⁇ type drift layer 1, an n type source region 4, a p type channel region 2 therebetween, a gate insulating film 3, and a gate electrode 5 is formed on a substrate ( It is arranged on the surface side of the n ⁇ -type drift layer 1). However, in this case, only the n-type buffer layer B is provided between the n ⁇ -type drift layer 1 and the collector electrode 9 and does not have a diode function. Therefore, for example, when applied to the inverter shown in FIG. 21, it is necessary to incorporate flywheel diodes (601a to 603a, 601b to 603b) as separate chips.
- flywheel diodes (601a to 603a, 601b to 603b) as separate chips.
- the flywheel is connected in reverse parallel when the IGBT is non-conducting (when off).
- a positive voltage for example, about 1 to 2 V
- the pn junction composed of the p-type channel region 2 and the n ⁇ -type drift layer 1 is reverse-biased. , No current flows through the IGBT. That is, it does not conduct reversely and cannot function as a diode.
- FIG. 23 is a main-portion cross-sectional view showing the semiconductor device of Comparative Example 2 of the present embodiment.
- an n-type buffer layer B and a p-type collector layer C are provided between the n ⁇ -type drift layer 1 and the collector electrode 9.
- the junction between the layer B and the p-type collector layer C also does not function as a diode. That is, the IGBT does not reversely conduct when it is non-conducting (off) and cannot function as a diode.
- a current flows when a positive voltage (for example, about 1 to 2 V) is applied to the emitter electrode 8. That is, reverse conduction is established.
- a positive voltage for example, about 1 to 2 V
- Fig. 2 shows the output characteristics of a diode composed of a high-concentration pn junction.
- a positive potential is present between the anode (high-concentration p-type region 7) and the cathode (high-concentration n-type region 6).
- the current increases again through a region where the current decreases (negative resistance) as the voltage increases (first quadrant I).
- a diode exhibiting such output characteristics is called a tunnel diode or an Esaki diode in the name of the discoverer.
- the IGBT when the IGBT is operating (on), the IGBT is operated using the characteristics shown in the shaded portion of the first quadrant I. Specifically, after a positive voltage (for example, a voltage of about several tens to several thousand volts) is applied between the emitter electrode 8 and the collector electrode 9, several tens of volts are provided between the gate electrode 5 and the emitter electrode 8. Apply a voltage of volts (for example, a voltage of about 15V).
- a positive voltage for example, a voltage of about several tens to several thousand volts
- a channel is formed at the boundary between the p-type channel region 2 and the gate insulating film 3 by the voltage applied to the gate electrode 5.
- n ⁇ type drift layer 1 and n type source region 4 are electrically connected, and electrons are injected from n type source region 4 into n ⁇ type drift layer 1.
- This flow of electrons acts as a base current of the bipolar transistor composed of the n ⁇ type drift layer 1, the p-type channel region 2 and the n-type source region 4, and the bipolar transistor becomes conductive.
- the electrons promote the injection of holes from the collector electrode 9 side, and the holes injected from the collector electrode 9 side pass through the n ⁇ -type drift layer 1 and further pass through the p-type channel region 2 to the emitter electrode 8. Flow into. Thus, collector current flows (IGBT is turned on). At this time, n - -type drift layer 1, since the electrons and holes are supplied, n - excessive electrons and holes are accumulated in the type drift layer 1. This is a phenomenon called conductivity modulation, and greatly reduces the resistance when the IGBT is on (on).
- the IGBT when not operating as an IGBT (when off), it operates as a diode using the characteristics shown in the shaded portion of the third quadrant III. Specifically, the diode is made conductive by utilizing a tunnel phenomenon. In other words, the IGBT is reversely conducted.
- FIG. 3 is a band diagram for explaining the conduction mechanism of the current flowing between the high-concentration pn junctions.
- FIG. 3A is a band diagram when the diode of this embodiment is conductive, and corresponds to the shaded portion of the third quadrant III of FIG.
- a positive voltage for example, about 1 to 2 V
- electrons are transferred from the p ++ layer (high-concentration p-type region 7) to n in the diode. It flows toward the ++ layer (high-concentration n-type region 6) by a tunnel phenomenon. That is, a tunnel current flows from the high concentration n-type region 6 to the high concentration p-type region 7.
- FIG. 3B is a band diagram when the IGBT of the present embodiment is on (on), and corresponds to the shaded portion of the first quadrant I of FIG.
- holes flow by diffusion from the p ++ layer (high-concentration p-type region 7) toward the n ++ layer (high-concentration n-type region 6). Therefore, the diode (the high-concentration pn junction, here the high-concentration n-type region 6 and the high-concentration p-type region 7) does not inhibit the IGBT conduction.
- the tunnel phenomenon can be caused by providing the high-concentration pn junction (6, 9).
- the impurity concentration of the high-concentration n-type region 6 and the high-concentration p-type region 7 for effectively generating a tunnel phenomenon is preferably 1 ⁇ 10 19 cm ⁇ 3 or more as described above. Further, when the present inventor examined the upper limit of the impurity concentration, the inventors have found that if the impurity concentration is too high, the on-resistance during IGBT conduction (on) is increased.
- FIG. 4 is a band diagram for explaining the conduction mechanism of current flowing through the pn junction when the impurity concentration of the high-concentration pn junction is greater than 3 ⁇ 10 20 cm ⁇ 3 .
- FIG. 4A when the diode conducts, current flows due to a tunnel phenomenon as in FIG.
- FIG. 4B when conducting as an IGBT, as shown in FIG. 4B, electrons flow from the high-concentration n-type region 6 (n ++ layer) to the high-concentration p-type region 7 (p ++ layer) due to a tunnel phenomenon.
- the IGBT can be operated as a built-in diode, and the on-voltage of the IGBT can be reduced. The increase can be suppressed.
- the thickness of the high-concentration n-type region 6 (n ++ layer) and the thickness of the high-concentration p-type region 7 (p ++ layer) were further increased. We have found that there is a suitable range.
- the thickness of the high concentration n-type region 6 (n ++ layer) is preferably 50 nm or less.
- the thickness of the high concentration p-type region 7 (p ++ layer) is preferably 50 nm or less.
- the IGBT with a built-in diode may be configured as a semiconductor device shown in FIG.
- FIG. 24 is a main-portion cross-sectional view showing the semiconductor device of Comparative Example 3 of the present embodiment.
- an IGBT having an n ⁇ type drift layer 1, an n type source region 4, a p type channel region 2 between them, a gate insulating film 3, and a gate electrode 5 is formed on a substrate (n ⁇ type). It is arranged on the surface side of the drift layer 1).
- n-type buffer layer B and a p-type collector layer C are provided between the n ⁇ -type drift layer 1 and the collector electrode 9, and an n-type layer D is provided so as to divide the p-type collector layer C. It has been.
- the n-type layer D, the p-type channel region 2 and the n ⁇ -type drift layer 1 constitute a pin-type diode.
- a semiconductor device having such a configuration may be referred to as a “collector short-structure reverse conducting IGBT”.
- FIG. 25 is a graph showing the forward output characteristics of the semiconductor devices of Comparative Example 1 and Comparative Example 3.
- the horizontal axis is the collector voltage Vce [V]
- the vertical axis is the collector current Ic [A].
- the collector voltage is the pn junction diffusion voltage (for example, about 0.7 V). Then, the collector current rises and increases exponentially.
- the collector current-collector voltage characteristics (dotted line) of the semiconductor device of Comparative Example 3 that is, the reverse conducting IGBT having the collector short structure
- the collector voltage becomes the diffusion voltage (for example, about 0.7 V)
- the collector voltage After the current does not rise and a voltage equal to or higher than the diffusion voltage is applied, the collector voltage once drops sharply and then the collector current increases. This phenomenon is called “snapback”.
- the semiconductor device of Comparative Example 3 (IGBT with a built-in diode) has a problem of “current concentration” in addition to the above “snapback”. For example, when the semiconductor device is operating as a diode, the diode current flows in a concentrated manner in the collector short n-type layer D. For this reason, the forward voltage drop of the diode increases, leading to deterioration of the device characteristics.
- the current does not flow locally in the n-type layer D as in the comparative example 3, and the region in contact with the collector electrode 9 (high concentration pn Since current flows in the entire surface of the joints 6 and 7), the above-mentioned problems of “snapback” and “current concentration” can be avoided [Effect 2].
- FIGS. 5 to 10 are cross-sectional views of relevant parts showing the manufacturing steps of the semiconductor device of the present embodiment.
- a p-type channel region (p-type semiconductor region) 2 is formed on the upper surface.
- the p-type channel region 2 is formed by ion implantation of p-type (second conductivity type) impurities (for example, boron (B)).
- the substrate made of n ⁇ -type single crystal silicon is an n ⁇ -type drift layer (n-type semiconductor region) 1.
- n ⁇ type drift layer 1 a substrate having an n ⁇ type silicon layer (n ⁇ type drift layer 1) epitaxially grown on a support substrate made of n + type single crystal silicon containing an n type impurity is used, and a p type is formed on the surface thereof.
- the channel region 2 may be formed.
- a trench-type gate electrode (conductive film) 5 is formed.
- the p-type channel region 2 and the n ⁇ -type drift layer 1 are dry-etched using a photoresist film (not shown) exposed and developed by photolithography as a mask to form a trench (trench) T.
- the trench T penetrates the p-type channel region 2 and reaches the n ⁇ -type drift layer 1.
- the gate insulating film 3 is formed on the sidewall and bottom of the trench T.
- the gate insulating film 3 made of a silicon oxide film is formed on the side wall and the bottom of the trench T by performing a thermal oxidation process on the substrate.
- a conductive film for example, a polycrystalline silicon film doped with an n-type impurity (for example, phosphorus (P)) is formed on the substrate including the trench T by CVD (Chemical Vapor Deposition). ) Method or the like is used to deposit the film so as to fill the trench T. Next, for example, the entire surface of the polycrystalline silicon film is etched back, and the polycrystalline silicon film is left in the trench T, whereby the gate electrode 5 is formed.
- CVD Chemical Vapor Deposition
- an n-type source region (n-type semiconductor region) 4 is formed so as to be in contact with the trench T on the surface of the p-type channel region 2 near the gate electrode 5 by photolithography.
- the n-type source region 4 ion-implants n-type (first conductivity type) impurities (for example, phosphorus (P)) using a photoresist film (not shown) exposed and developed by photolithography as a mask. Form by injecting.
- a p-type semiconductor region (p-type channel region 2) in which the n-type source region 4 is not formed is called a p-type well 10.
- the n ⁇ type drift layer 1 serves as the drain region
- the n type source region (n type semiconductor region) 4 serves as the source region
- the p type channel region (p type semiconductor region) 2 therebetween.
- As a channel region it is possible to form an IGBT in which the gate electrode 5 is disposed through the gate insulating film 3 in contact with the channel region.
- an emitter electrode 8 electrically connected to the n-type source region 4 is formed.
- an aluminum (Al) film for example, is deposited on the substrate as a conductive film by a sputtering method or the like.
- a tungsten nitride (TiW) film may be formed as a barrier conductor film between the substrate and the Al film.
- the emitter film 8 is formed by etching (dry etching or wet etching) the Al film using a photoresist film patterned by photolithography as a mask.
- the n ⁇ -type drift layer 1 is thinned from the back surface side (surface opposite to the first surface, second surface, bottom surface) side, that is, the n ⁇ -type drift layer 1.
- the back surface of the n ⁇ -type drift layer 1 is ground with the protective surface on the lower side.
- a high-concentration n-type region 6 and a high-concentration p-type region 7 constituting a diode are formed on the back surface side (polished surface) of the n ⁇ -type drift layer 1.
- the high-concentration n-type region 6 is formed by ion-implanting n-type impurities (for example, phosphorus (P)) from the back surface side of the n ⁇ -type drift layer 1.
- a high-concentration p-type region 7 is formed by ion implantation of a p-type impurity (for example, boron (B)) from the back surface side of the n ⁇ -type drift layer 1.
- a p-type impurity for example, boron (B)
- heat treatment is performed to activate the implanted impurities.
- the order of forming the high concentration n-type region 6 and the high concentration p-type region 7 may be reversed.
- the high concentration p-type region 7 is formed on the back surface side of the n ⁇ type drift layer 1, and the high concentration n type region 6 is viewed from the back surface side of the n ⁇ type drift layer 1.
- ion implantation conditions such as ion implantation energy are adjusted so as to extend deeper than the high-concentration p-type region 7.
- the heat treatment (annealing) temperature is set to 600 ° C.
- the temperature is preferably 800 ° C. or higher.
- the temperature is preferably 800 ° C. or higher.
- laser annealing local heat treatment is possible, and a temperature rise in the vicinity of the emitter electrode 8 is suppressed while sufficiently high in the vicinity of the high concentration n-type region 6 and the high concentration p-type region 7. It is effective as a heat treatment means.
- a titanium (Ti) film as a conductive film on the back surface of the substrate, that is, the back surface of the n ⁇ -type drift layer 1 (here, the high-concentration p-type region 7),
- a stacked film of a nickel (Ni) film and a gold (Au) film is deposited by sputtering or the like, and a collector electrode 9 made of these stacked films is formed.
- each chip is mounted on, for example, a mounting board having external terminals and sealed (mounted) with a resin or the like. Thereby, the semiconductor device of the present embodiment is substantially completed.
- FIG. 1 In the semiconductor device of the present embodiment (FIG. 1), one IGBT and a diode are shown and described. However, in a power semiconductor, the above parts (IGBT and diode) are used to obtain large power. A structure in which a plurality of elements are repeatedly arranged is employed.
- the high-concentration n-type region 6 and the high-concentration p-type region 7 are each formed by ion implantation. However, these regions may be formed by epitaxial growth. Note that the configuration of the semiconductor device of this embodiment is the same as the configuration (including operation) described in Embodiment 1 with reference to FIG.
- FIG. 11 to 13 are cross-sectional views showing the main parts of the manufacturing process of the semiconductor device according to the present embodiment.
- the manufacturing process of the semiconductor device of the present embodiment will be described with reference to the drawings.
- an IGBT is formed on the main surface of the substrate.
- the IGBT formation process is the same as that in the first embodiment described with reference to FIGS. 5 to 7, and thus detailed description thereof is omitted. That is, after forming the p-type channel region 2 on the surface of the substrate (n ⁇ -type drift layer) made of n ⁇ -type single crystal silicon, the p-type channel region 2 is penetrated to reach the n ⁇ -type drift layer 1. A groove T is formed. Next, the gate insulating film 3 and the gate electrode 5 are formed in the trench T, and the n-type source region 4 is formed on the surface of the p-type channel region 2 in the vicinity of the gate electrode 5.
- the n ⁇ type drift layer 1 serves as the drain region
- the n type source region 4 serves as the source region
- the p type channel region 2 between them serves as the channel region
- the gate insulating film 3 in contact with the channel region is interposed therebetween.
- An IGBT in which the gate electrode 5 is disposed can be formed.
- the n ⁇ type drift layer 1 is thinned from the back surface side (surface opposite to the first surface, second surface, bottom surface) side, that is, the n ⁇ -type drift layer 1.
- the back surface of the n ⁇ -type drift layer 1 is ground with the protective surface on the lower side.
- a high-concentration n-type region 6 and a high-concentration p-type region 7 constituting a diode are formed on the back surface side (polished surface) of the n ⁇ -type drift layer 1.
- a high-concentration n-type region 6 is formed by epitaxially growing a single crystal silicon layer on the back surface of the n ⁇ -type drift layer 1 while doping an n-type impurity (for example, phosphorus (P)).
- a high-concentration p-type region 7 is formed on the high-concentration n-type region 6 by epitaxially growing a single crystal silicon layer while doping a p-type impurity (for example, boron (B) or the like).
- the emitter electrode 8 is formed on the surface of the substrate, and the collector electrode 9 is formed on the back surface of the substrate.
- the order of these forming steps is not limited. For example, by peeling the tape on the surface of the substrate and depositing, for example, an Al film as a conductive film on the substrate by sputtering or the like, etching into a desired shape is performed.
- the emitter electrode 8 is formed.
- a conductive film for example, a titanium (Ti) film, a nickel (Ni) film, and a gold film are formed on the back surface of the substrate, that is, the back surface of the n ⁇ type drift layer 1 (here, the high concentration p-type region 7).
- a stacked film of (Au) film is deposited by sputtering or the like, and a collector electrode 9 made of these stacked films is formed.
- the substrate in the wafer state is diced along the divided regions to form a plurality of chips. Further, each chip is mounted on, for example, a mounting board having external terminals and sealed (mounted) with a resin or the like. Thereby, the semiconductor device of the present embodiment is substantially completed.
- the emitter electrode 8 is formed so that the epitaxial growth temperature is higher than the melting point of Al (for example, 900 ° C. or higher). It is possible to form an epitaxial layer with good characteristics. Further, by forming the emitter electrode 8 after that, Al having high versatility can be used as the electrode.
- an n-type buffer layer 11 is provided between n ⁇ -type drift layer 1 and high-concentration n-type region 6 in the first embodiment.
- FIG. 14 is a fragmentary cross-sectional view showing the semiconductor device of the present embodiment. Similar to the first embodiment (FIG. 1), the semiconductor device of the present embodiment includes an IGBT and a diode, and is an IGBT with a built-in diode.
- an IGBT having an n ⁇ -type drift layer 1, an n-type source region 4, a p-type channel region 2 between them, a gate insulating film 3, and a gate electrode 5 is formed.
- n ⁇ type drift layer 1 Arranged on the surface side of the substrate (n ⁇ type drift layer 1). Further, a diode having a high-concentration n-type region 6 and a high-concentration p-type region 7 is disposed on the back side of the substrate (n ⁇ type drift layer 1).
- the substrate - the surface side of the (n type drift layer 1), n-type source region 4 and the emitter electrode 8 which is electrically connected is disposed, the substrate - high on the back surface side of the (n type drift layer 1)
- a collector electrode 9 is arranged on the concentration p-type region 7.
- the difference from the first embodiment (FIG. 1) is that an n-type buffer layer 11 is provided between the n ⁇ -type drift layer 1 and the high concentration n-type region 6.
- the impurity concentration of the n-type buffer layer 11 is lower than the impurity concentration of the high-concentration n-type region 6 and higher than the impurity concentration of the n ⁇ -type drift layer 1.
- the n-type buffer layer B plays a role of suppressing the depletion layer from reaching the p-type channel region 2.
- the n-type buffer layer 11 is provided to suppress the depletion layer from extending and to ensure the withstand voltage. be able to. Further, if the breakdown voltage design of the semiconductor device of Comparative Example 2 (FIG. 23) is followed, an IGBT incorporating a diode can be easily designed.
- the semiconductor device of this embodiment can be formed in a manner similar to that of Embodiment 1.
- the n-type buffer layer 11 is similarly formed on the back surface of the substrate (n ⁇ type drift layer 1). From the side, an n-type impurity (for example, phosphorus (P)) may be ion-implanted.
- the p-type channel region 2 is disposed on one side of the gate electrode 5 and the p-type well (p-type semiconductor region) 10 is disposed on the other side of the gate electrode 5.
- the mold well 10 may be omitted, and the gate electrode 5 and the p-type channel region 2 may be arranged densely.
- FIG. 15 is a fragmentary cross-sectional view showing the semiconductor device of the present embodiment. Similar to the first embodiment (FIG. 1), the semiconductor device of the present embodiment includes an IGBT and a diode, and is an IGBT with a built-in diode.
- an IGBT having an n ⁇ -type drift layer 1, an n-type source region 4, a p-type channel region 2 between them, a gate insulating film 3, and a gate electrode 5 is formed.
- n ⁇ type drift layer 1 Arranged on the surface side of the substrate (n ⁇ type drift layer 1). Further, a diode having a high-concentration n-type region 6 and a high-concentration p-type region 7 is disposed on the back side of the substrate (n ⁇ type drift layer 1).
- the substrate - the surface side of the (n type drift layer 1), n-type source region 4 and the emitter electrode 8 which is electrically connected is disposed, the substrate - high on the back side of the (n type drift layer 1)
- a collector electrode 9 is arranged on the concentration p-type region 7.
- the difference from the first embodiment (FIG. 1) is that the p-type well 10 is omitted and the gate electrode 5 and the p-type channel region 2 are repeatedly and densely provided.
- the p-type well 10 of the first embodiment is not connected to any of the gate electrode 5, the emitter electrode 8, and the collector electrode 9, and is in a floating state.
- a p-type well 10 in a floating state it is possible to reduce element breakdown due to overcurrent of the IGBT, reduce conduction loss, and reduce on-voltage.
- the p-type well 10 is in an electrically floating state, when the IGBT is turned on, the potential of the p-type well 10 rises, and the gate is connected via the parasitic capacitance between the p-type well 10 and the gate electrode 5. The potential of the electrode 5 rises and the IGBT turn-on is accelerated. For this reason, the change rate (di / dt) of the collector current is increased, and EMI (Electromagnetic Interference) noise may be increased.
- EMI Electromagnetic Interference
- the configuration in which the p-type well 10 is omitted suppresses the EMI noise. be able to.
- the semiconductor device of this embodiment can be formed in a manner similar to that of Embodiment 1.
- the n-type source region 4 and the emitter electrode 8 may be formed in the region corresponding to the p-type well 10 of the first embodiment, and the gate electrode 5 may be formed in the niche.
- an n-type hole barrier layer 12 is provided between the p-type channel region 2 and the n ⁇ -type drift layer 1 of the fourth embodiment.
- FIG. 16 is a fragmentary cross-sectional view showing the semiconductor device of the present embodiment. Similar to the fourth embodiment (FIG. 15), the semiconductor device of the present embodiment has an IGBT and a diode, and is an IGBT with a built-in diode.
- an IGBT having an n ⁇ -type drift layer 1, an n-type source region 4, a p-type channel region 2 between them, a gate insulating film 3, and a gate electrode 5 is formed.
- a diode having a high-concentration n-type region 6 and a high-concentration p-type region 7 is disposed on the back side of the substrate (n ⁇ type drift layer 1).
- the substrate - the surface side of the (n type drift layer 1), n-type source region 4 and the emitter electrode 8 which is electrically connected is disposed, the substrate - high on the back side of the (n type drift layer 1)
- a collector electrode 9 is arranged on the concentration p-type region 7.
- an n-type hole barrier layer (n-type semiconductor region) 12 is provided between the p-type channel region 2 and the n ⁇ -type drift layer 1. is there.
- the trench T in which the gate electrode 5 and the gate insulating film 3 are disposed penetrates the p-type channel region 2 and the n-type hole barrier layer 12 and reaches the n ⁇ -type drift layer 1.
- the impurity concentration of the n-type hole barrier layer 12 is higher than the impurity concentration of the n ⁇ -type drift layer 1 and lower than the impurity concentration of the high-concentration n-type region 6.
- the n-type hole barrier layer 12 plays a role of a weir with respect to the holes during the IGBT conduction, so that the holes are likely to stay in the n ⁇ -type drift layer 1 and the on-voltage is reduced. it can.
- the configuration in which the n-type hole barrier layer 12 is provided makes it possible to turn on at the time of IGBT conduction.
- the voltage can be reduced.
- the semiconductor device of this embodiment can be formed in a manner similar to that of Embodiment 1.
- the n-type source region 4 and the emitter electrode 8 may be formed in the region corresponding to the p-type well 10 of the first embodiment, and the gate electrode 5 may be formed in the niche.
- the p-type channel region (p-type semiconductor region) 2 is formed on the surface of a substrate (semiconductor substrate) made of n ⁇ -type single crystal silicon, an n-type hole barrier layer 12 is formed below the n-type (barrier layer 12). It is formed by ion implantation of impurities (for example, phosphorus (P)) of the first conductivity type.
- impurities for example, phosphorus (P)
- the gate insulating film 3 and the like are formed therein, as in the first embodiment.
- the gate electrode 5 may be formed.
- FIG. 6 In the first embodiment (FIG. 1), a so-called “vertical” MISFET is described as an example of a “trench gate type” IGBT.
- the structure of the IGBT has a “vertical” type.
- horizontal type and there are structures of “trench gate type” and “planar gate type” depending on the structure of the gate electrode portion. Therefore, it is good also as IGBT which employ
- “vertical” MISFETs, “planar gate type” IGBTs, and “lateral” MISFETs, “planar gate type” IGBTs will be described as examples.
- FIG. 17 is a cross-sectional view of a principal part showing the semiconductor device of this embodiment, and FIG. 17A shows a configuration of a “planar gate type” IGBT, which is a “vertical type” MISFET. Similar to the first embodiment (FIG. 1), the semiconductor device of the present embodiment includes an IGBT and a diode, and is an IGBT with a built-in diode.
- the gate electrode 5 of the IGBT has a “planar gate type” configuration. Specifically, as shown in FIG. 17A, a p-type channel region (p-type semiconductor region) 2 serving as a channel region is disposed on the main surface of n ⁇ -type drift layer 1 serving as a drain region, Inside this p-type channel region 2, an n-type source region (n-type semiconductor region) 4 serving as a source region is arranged. In this case, the gate electrode 5 is disposed on the n ⁇ -type drift layer 1, the n-type source region 4 and the p-type channel region 2 via the gate insulating film 3.
- the high-concentration n-type region 6 constituting the diode is arranged on the back side of the substrate (n ⁇ -type drift layer 1), and the high-concentration p-type region 7 is arranged inside the high-concentration n-type region 6.
- the emitter electrode 8 is disposed on the surface side of the substrate (n ⁇ type drift layer 1) so as to be electrically connected to the n-type source region 4, and the collector electrode 9 is disposed on the surface side of the substrate.
- the n-type region 6 and the high-concentration p-type region 7 are in contact with each other.
- the high concentration n-type region 6 has, for example, an n-type impurity concentration higher than that of the n-type source region 4, and the high concentration p-type region 7 has, for example, a p-type impurity concentration higher than that of the p-type channel region 2. Is expensive. These impurity concentrations are 1 ⁇ 10 19 cm ⁇ 3 or more at the interface of the pn junction. Further, as a result of the study by the present inventor, as described above, when the impurity concentration of the pn junction increases, for example, 3 ⁇ 10 20 cm ⁇ 3 or more, the on-voltage during IGBT conduction increases. ing.
- the impurity concentration of the pn junction is preferably 1 ⁇ 10 19 cm ⁇ 3 or more and 3 ⁇ 10 20 cm ⁇ 3 or less.
- the thickness of the high-concentration n-type region 6 (n ++ layer) is preferably 50 nm or less from the viewpoint of efficiently generating conduction modulation. From the viewpoint of reducing the turn-off loss, the thickness of the high concentration p-type region 7 (p ++ layer) is preferably 50 nm or less.
- the effects described in detail in the first embodiment such as increasing the number of functions of the semiconductor device (see FIG. For example, the above-described effects 1 and 2) can be achieved.
- an ion implantation technique is used to form a p-type channel region 2, an n-type source region 4, a high concentration on a substrate (n ⁇ type drift layer 1).
- the gate insulating film 3 is formed on the substrate by thermal oxidation or the like, and then doped with an n-type impurity (for example, phosphorus (P)).
- P phosphorus
- a crystalline silicon film is deposited and patterned so as to cover the gate electrode 5 from the n ⁇ -type drift layer 1 to the n-type source region 4 via the p-type channel region 2.
- an emitter electrode 8 is formed on the n-type source region 4 by depositing and patterning, for example, an aluminum (Al) film as a conductive film on the substrate. Further, a collector electrode 9 made of a conductive film is formed on the back side of the high concentration p-type region 7.
- FIG. 17 is a fragmentary cross-sectional view showing the semiconductor device of this embodiment, and FIG. 17B shows the configuration of a “planar gate type” IGBT, which is a “lateral” MISFET. Similar to the first embodiment (FIG. 1), the semiconductor device of the present embodiment includes an IGBT and a diode, and is an IGBT with a built-in diode.
- the IGBT has a “horizontal” configuration, and the high-concentration n-type region 6 and the high-concentration p-type region 7 constituting the diode are also arranged in the horizontal direction.
- a p-type channel region (p-type semiconductor region) 2 serving as a channel region is disposed on the main surface of n ⁇ -type drift layer 1 serving as a drain region.
- An n-type source region (n-type semiconductor region) 4 serving as a source region is disposed inside the channel region 2.
- the gate electrode 5 is disposed on the p-type channel region 2 located between the n ⁇ -type drift layer 1 and the n-type source region 4 via the gate insulating film 3.
- the high-concentration n-type region 6 constituting the diode is arranged on the surface side of the substrate (n ⁇ type drift layer 1), and the high-concentration p-type region 7 constituting the diode is arranged inside the high-concentration n-type region 6. ing.
- the emitter electrode 8 is disposed on the surface side of the substrate (n ⁇ type drift layer 1) so as to be electrically connected to the n-type source region 4, and the collector electrode 9 is disposed on the surface side of the substrate.
- the n-type region 6 and the high-concentration p-type region 7 are in contact with each other.
- the high concentration n-type region 6 has, for example, an n-type impurity concentration higher than that of the n-type source region 4, and the high concentration p-type region 7 has, for example, a p-type impurity concentration higher than that of the p-type channel region 2. Is expensive. These impurity concentrations are 1 ⁇ 10 19 cm ⁇ 3 or more at the interface of the pn junction. Further, as a result of the study by the present inventor, as described above, when the impurity concentration of the pn junction increases, for example, 3 ⁇ 10 20 cm ⁇ 3 or more, the on-voltage during IGBT conduction increases. ing.
- the impurity concentration of the pn junction is preferably 1 ⁇ 10 19 cm ⁇ 3 or more and 3 ⁇ 10 20 cm ⁇ 3 or less.
- the thickness (depth) of the high-concentration n-type region 6 (n ++ layer) is preferably 50 nm or less from the viewpoint of efficiently generating conduction modulation.
- the thickness (depth) of the high-concentration p-type region 7 (p ++ layer) is preferably 50 nm or less.
- the effects described in detail in the first embodiment such as increasing the number of functions of the semiconductor device (see FIG. For example, the above-described effects 1 and 2) can be achieved.
- an ion implantation technique is used to form a p-type channel region 2, an n-type source region 4, a high concentration on a substrate (n ⁇ type drift layer 1).
- the gate insulating film 3 is formed on the substrate by thermal oxidation or the like, and then doped with an n-type impurity (for example, phosphorus (P)).
- P phosphorus
- a crystalline silicon film is deposited and patterned so as to cover the gate electrode 5 from the n ⁇ -type drift layer 1 to the n-type source region 4 via the p-type channel region 2.
- an aluminum (Al) film is deposited as a conductive film on the substrate and patterned to form an emitter electrode 8 on the n-type source region 4, and the high-concentration n-type region 6 and the high-concentration p.
- a collector film 9 is formed by depositing a conductive film on the mold region 7 and patterning it.
- the high-concentration pn junction (6, 7) is applied to the IGBT with a built-in diode, but an element to which the high-concentration pn junction (6, 7) is applied is used as a simple diode element. May be.
- FIG. 18 is a cross-sectional view of a principal part showing the semiconductor device (diode element) of the present embodiment.
- the semiconductor device of this embodiment (diode element), the substrate - disposed on the surface side of the (n type drift layer 1), and p-type anode region 20, the substrate - on the back side of the (n type drift layer 1) And a high-concentration pn junction composed of the high-concentration n-type region 6 and the high-concentration p-type region 7.
- the high-concentration n-type region 6 is disposed on the back side of the n ⁇ -type drift layer 1
- the high-concentration p-type region 7 is disposed on the high-concentration n-type region 6.
- the substrate - the surface side of the (n type drift layer 1), p-type cathode region (p-type semiconductor region) 20 and the anode electrode 21 which is electrically connected is disposed, the substrate (n - -type drift layer 1
- the cathode electrode 22 is disposed on the high-concentration p-type region 7 on the back surface side.
- the semiconductor device (diode element) of the present embodiment has a configuration corresponding to a cross section obtained by cutting the central portion of the emitter electrode 8 of FIG. 1 in the vertical direction. That is, in the cross section, the emitter electrode 8 is associated with the anode electrode 21, the collector electrode 9 is replaced with the cathode electrode 22, and the p-type channel region 2 is associated with the p-type anode region 20.
- the high-concentration n-type region 6 has an n-type impurity concentration higher than that of the n ⁇ -type drift layer 1, for example, and the high-concentration p-type region 7 has a p-type impurity concentration higher than that of the p-type anode region 20, for example. Concentration is high.
- the junction between the high-concentration n-type region 6 and the high-concentration p-type region 7 is a tunnel junction as will be described later, and the impurity concentration thereof is 1 ⁇ 10 19 cm ⁇ 3 or more at the interface of the pn junction. is there.
- FIG. 19 shows the output characteristics of the high-concentration pn junction.
- the anode high-concentration p-type region 7
- the cathode When a positive voltage is applied during (high-concentration n-type region 6), after the current rises from 0 V (zero volt), as the voltage increases, the region where the current decreases (negative resistance), The current increases again (first quadrant I).
- a negative voltage when a negative voltage is applied, a current flows in the opposite direction (third quadrant III).
- a current flows from zero volts by a tunnel current using the characteristics shown in the shaded portion of the third quadrant III.
- holes are diffused by diffusion from the high-concentration p-type region 7 through the high-concentration n-type region 6 to n ⁇ . It is injected into the type drift layer 1. By injecting holes, the waveform of recovery current and voltage becomes soft. That is, the rate of change of current and voltage becomes gentle, and EMI noise is reduced.
- the impurity concentration at the pn junction interface between the high-concentration n-type region 6 and the high-concentration p-type region 7 should be 1 ⁇ 10 19 cm ⁇ 3 or more. preferable. Further, when the present inventor examined the upper limit of the impurity concentration, the inventors have found that if the impurity concentration is too high, EMI noise increases during recovery.
- the reason for the increase in EMI noise is that holes are not diffusely injected from the high-concentration p-type region 7 (p ++ layer) into the high-concentration n-type region 6 (n ++ layer), and electrons are not concentrated in the high-concentration n-type region 6 (n This is because it flows from the ++ layer) to the high concentration p-type region 7 (p ++ layer) by a tunnel phenomenon. Therefore, the impurity concentration of the high-concentration n-type region 6 (n ++ layer) and the high-concentration p-type region 7 (p ++ layer) is set to 1 ⁇ 10 19 cm ⁇ 3 or more and 3 ⁇ 10 20 cm ⁇ 3 or less. EMI noise can be reduced, and an increase in the forward voltage drop of the diode can be suppressed.
- the present inventors examined the configuration of the high-concentration pn junction, it was found that the thicknesses of the high-concentration n-type region 6 (n ++ layer) and the high-concentration p-type region 7 (p ++ layer) are more preferable ranges. Found that there is.
- the thickness of the high-concentration n-type region 6 (n ++ layer) is preferably 50 nm or less.
- the thickness of the high-concentration p-type region 7 (p ++ layer) if it is too thick, holes injected from the high-concentration p-type region 7 (p ++ layer) increase at the time of recovery. To increase. From the viewpoint of reducing the recovery loss, the thickness of the high concentration p-type region 7 (p ++ layer) is preferably 50 nm or less.
- the p-type anode region 20 is formed on the surface of the substrate (n ⁇ -type drift layer 1) using an ion implantation technique, and the substrate (n The high concentration n-type region 6 and the high concentration p-type region 7 are formed on the back surface (cathode side) of the ⁇ type drift layer 1). Then, the anode electrode 21 and the cathode electrode 22 are formed by depositing a conductive film on the front surface and the back surface of the substrate.
- the p-type anode region 20 is a substantially single p-type impurity concentration layer.
- the p-type anode region is formed by the p-type region 20A and the p ⁇ -type region 23. It may be configured.
- FIG. 20 is a fragmentary cross-sectional view showing the semiconductor device of the present embodiment.
- the semiconductor device (diode element) of the present embodiment includes a p-type region 20A and a p ⁇ -type region 23 constituting a p-type anode region, disposed on the surface side of a substrate (n ⁇ -type drift layer 1), a substrate
- the n - type drift layer 1 is disposed on the back surface side and has a high-concentration pn junction portion composed of the high-concentration n-type region 6 and the high-concentration p-type region 7.
- the high concentration n-type region 6 is arranged on the back side of the n ⁇ type drift layer 1, and the high concentration p-type region 7 is arranged on the back side of the high concentration n-type region 6.
- the substrate - the surface side of the (n type drift layer 1), p-type cathode region (p-type semiconductor region) 20 and the anode electrode 21 which is electrically connected is disposed, the substrate (n - -type drift layer 1 ) On the back side of the high-concentration p-type region 7 on the back side.
- the p-type anode region has a p-type region 20A and a p ⁇ -type region 23 having a p-type impurity concentration lower than that of the p-type region 20A.
- the recovery can be further softened compared to the case of the seventh embodiment.
- the recovery can be further softened.
- the recovery characteristics can be further improved.
- the p-type region 20A and the p ⁇ -type region 23 are formed on the surface of the substrate (n ⁇ -type drift layer 1) using an ion implantation technique. Then, the high-concentration n-type region 6 and the high-concentration p-type region 7 are formed on the back surface of the substrate (n ⁇ type drift layer 1). Then, the anode electrode 21 and the cathode electrode 22 are formed by depositing a conductive film on the front surface and the back surface of the substrate.
- FIG. 21 is a diagram showing a circuit diagram of the three-phase motor in the present embodiment.
- 601a to 603a and 601b to 603b are flywheel diodes
- 701a to 703a and 701b to 703b are IGBTs
- 801a to 803a and 801b to 803b are gate circuits
- 900 is a P terminal of power terminals
- 901 is a power terminal N terminal
- 910, 911 and 912 are U terminal
- 950 is a motor
- 960 is a power source.
- the motor 950 can be controlled at a variable speed by a so-called “inverter circuit”.
- the electrical energy from the power source 960 is changed to alternating current of a desired frequency by using IGBTs (701a to 703a, 701b to 703b), and the rotational speed of the motor 950 is controlled at a variable speed.
- the motor 950 is a three-phase motor and has inputs of a U-phase 910, a V-phase 911, and a W-phase 912.
- the input power of the U-phase 910 is supplied when the gate circuit 801a of the IGBT 701a (the upper arm IGBT) whose collector is connected to the power terminal 900 on the plus side is turned on.
- the gate circuit 801a may be turned off. By repeating this, electric power having a desired frequency can be supplied to the motor 950.
- a flywheel diode 601b is connected to the IGBT 701b in antiparallel with the IGBT 701b.
- the flywheel diode 601b converts the current flowing in the IGBT 701a to the flywheel diode 601b in antiparallel with the IGBT 701b (lower arm IGBT) whose emitter is connected to the negative power supply terminal 901. By flowing, the energy stored in the coil of the motor 950 is released.
- the flywheel diode 601b of the lower arm When the IGBT 701a of the upper arm is turned on again, the flywheel diode 601b of the lower arm is turned off, and power is supplied to the motor 950 through the IGBT 701a of the upper arm. As described above, the flywheel diode 601b repeats non-conduction and conduction according to whether the IGBT 701a is on or off. Similarly, the flywheel diode 601a repeats non-conduction and conduction according to the on / off state of the IGBT 701b. As described above, a single switching element such as an IGBT does not have a function of allowing this reverse current to flow. Therefore, by connecting a diode in reverse parallel to the switching element such as an IGBT, the reverse current can flow. .
- the semiconductor device described in the first to sixth embodiments (the IGBT with a built-in diode) can be applied to the IGBT of the circuit of the three-phase motor and the parallel circuit unit including the flywheel diode in reverse parallel to the IGBT.
- the semiconductor device (diode element) described in the seventh and eighth embodiments may be incorporated in the circuit of the three-phase motor as a flywheel diode. Also in this case, as described above, since the characteristics of the semiconductor device (diode element) such as reduction of EMI noise are improved, the characteristics of the circuit of the three-phase motor incorporating the same can be improved.
- circuit shown in FIG. 21 is merely an example.
- the circuit unit in which a parallel circuit in which a switching element and a diode are anti-parallel is combined in series is widely applied to an inverter circuit in which the same number of phases as the number of AC output phases are coupled. can do.
- an inverter circuit that converts direct current to alternating current has been described as an example here, it is apparent that the present invention can also be applied to a converter circuit that converts alternating current to direct current.
- n-type hole barrier layer 12 of the fifth embodiment to the semiconductor device of the first embodiment (FIG. 1) and reversing the conductivity types of the IGBT and the diode. .
- the present invention can be widely used in semiconductor devices and industries using the same.
Abstract
Description
以下、図面を参照しながら本実施の形態の半導体装置の構造と製造方法について詳細に説明する。
図1は、本実施の形態の半導体装置を示す要部断面図である。本実施の形態の半導体装置は、IGBT(IGBT部)とダイオード(ダイオード部、高濃度pn接合部)とを有する。当該半導体装置は、ダイオード内蔵のIGBT(逆導通IGBT)とも言える。このIGBTは、いわゆる“トレンチゲート型”と呼ばれる構造である。IGBTは、パワーMISFETの一種であり、いわゆる縦型や横型と呼ばれるものがあり、さらにゲート電極部の構造に応じて“トレンチ(溝)ゲート型”や“プレーナゲート型”といった構造に分類される。本実施の形態のIGBTは、いわゆる“縦型”のMISFETで、“トレンチゲート型”と呼ばれる構造である。
次いで、図5~図10を参照しながら、本実施の形態の半導体装置の製造方法を説明するとともに、当該半導体装置の構成をより明確にする。図5~図10は、本実施の形態の半導体装置の製造工程を示す要部断面図である。
実施の形態1においては、高濃度n型領域6および高濃度p型領域7を、それぞれ、イオン注入によって形成したが、これらの領域をエピタキシャル成長により形成してもよい。なお、本実施の形態の半導体装置の構成は、実施の形態1において図1等を参照しながら説明した構成(動作も含む)と同様であるためその説明を省略する。
本実施の形態においては、実施の形態1のn-型ドリフト層1と高濃度n型領域6との間に、n型バッファ層11が設けられている。
図14は、本実施の形態の半導体装置を示す要部断面図である。本実施の形態の半導体装置は、実施の形態1(図1)と同様に、IGBTとダイオードとを有し、ダイオード内蔵のIGBTである。
本実施の形態の半導体装置は、実施の形態1と同様に形成することができる。例えば、実施の形態1において、ダイオードを構成する高濃度n型領域6および高濃度p型領域7を形成する際、n型バッファ層11も同様に、基板(n-型ドリフト層1)の裏面側から、n型の不純物(例えばリン(P)など)をイオン注入することによって形成すればよい。
実施の形態1(図1)においては、ゲート電極5の一方にp型チャネル領域2を配置し、ゲート電極5の他方にp型ウエル(p型の半導体領域)10を配置したが、このp型ウエル10を省略し、ゲート電極5およびp型チャネル領域2を密に配置してもよい。
図15は、本実施の形態の半導体装置を示す要部断面図である。本実施の形態の半導体装置は、実施の形態1(図1)と同様に、IGBTとダイオードとを有し、ダイオード内蔵のIGBTである。
本実施の形態の半導体装置は、実施の形態1と同様に形成することができる。例えば、実施の形態1のp型ウエル10に対応する領域にも、n型ソース領域4およびエミッタ電極8を形成するとともに、ゲート電極5を蜜に形成すればよい。
本実施の形態においては、実施の形態4のp型チャネル領域2とn-型ドリフト層1との間に、n型ホールバリア層12が設けられている。
図16は、本実施の形態の半導体装置を示す要部断面図である。本実施の形態の半導体装置は、実施の形態4(図15)と同様に、IGBTとダイオードとを有し、ダイオード内蔵のIGBTである。
本実施の形態の半導体装置は、実施の形態1と同様に形成することができる。例えば、実施の形態1のp型ウエル10に対応する領域にも、n型ソース領域4およびエミッタ電極8を形成するとともに、ゲート電極5を蜜に形成すればよい。また、n-型単結晶シリコンよりなる基板(半導体基板)の表面に、p型チャネル領域(p型の半導体領域)2を形成する際、その下層に、n型ホールバリア層12をn型(第1導電型)の不純物(例えばリン(P)など)をイオン注入することによって形成しておく。さらに、p型チャネル領域2およびn型ホールバリア層12を貫通し、n-型ドリフト層1まで到達する溝Tを形成した後、その内部に、実施の形態1と同様にゲート絶縁膜3およびゲート電極5を形成すればよい。
実施の形態1(図1)においては、いわゆる、“縦型”のMISFETで、“トレンチゲート型”のIGBTを例に説明したが、前述したように、IGBTの構造には、“縦型”や“横型”と呼ばれるものがあり、さらにゲート電極部の構造に応じて“トレンチ(溝)ゲート型”や“プレーナゲート型”といった構造のものがある。よって、他の構造を採用したIGBTとしてもよい。ここでは、“縦型”のMISFETで、“プレーナゲート型”のIGBTおよび、“横型”のMISFETで、“プレーナゲート型”のIGBTを例として説明する。
図17は、本実施の形態の半導体装置を示す要部断面図であり、図17(A)は、“縦型”のMISFETで、“プレーナゲート型”のIGBTの構成を示す。本実施の形態の半導体装置は、実施の形態1(図1)と同様に、IGBTとダイオードとを有し、ダイオード内蔵のIGBTである。
本実施の形態の半導体装置の製造方法について制限はないが、例えば、イオン注入技術を用いて、基板(n-型ドリフト層1)に、p型チャネル領域2、n型ソース領域4、高濃度n型領域6および高濃度p型領域7を形成した後、基板上に、熱酸化処理等によりゲート絶縁膜3を形成した後、n型の不純物(例えばリン(P))がドープされた多結晶シリコン膜を堆積し、パターニングすることによりゲート電極5をn-型ドリフト層1からp型チャネル領域2を介してn型ソース領域4まで覆うように形成する。さらに、ゲート電極5上に絶縁膜ILを形成した後、基板上に導電性膜として例えばアルミニウム(Al)膜を堆積し、パターニングすることにより、n型ソース領域4上にエミッタ電極8を形成し、また、高濃度p型領域7の裏面側に導電性膜よりなるコレクタ電極9を形成する。
図17は、本実施の形態の半導体装置を示す要部断面図であり、図17(B)は、“横型”のMISFETで、“プレーナゲート型”のIGBTの構成を示す。本実施の形態の半導体装置は、実施の形態1(図1)と同様に、IGBTとダイオードとを有し、ダイオード内蔵のIGBTである。
本実施の形態の半導体装置の製造方法について制限はないが、例えば、イオン注入技術を用いて、基板(n-型ドリフト層1)に、p型チャネル領域2、n型ソース領域4、高濃度n型領域6および高濃度p型領域7を形成した後、基板上に、熱酸化処理等によりゲート絶縁膜3を形成した後、n型の不純物(例えばリン(P))がドープされた多結晶シリコン膜を堆積し、パターニングすることによりゲート電極5をn-型ドリフト層1からp型チャネル領域2を介してn型ソース領域4まで覆うように形成する。さらに、基板上に導電性膜として例えばアルミニウム(Al)膜を堆積し、パターニングすることにより、n型ソース領域4上にエミッタ電極8を形成し、また、高濃度n型領域6および高濃度p型領域7上に導電性膜を堆積し、パターニングすることによりコレクタ電極9を形成する。
上記実施の形態1~6においては、ダイオード内蔵のIGBTに高濃度pn接合部(6、7)を適用したが、高濃度pn接合部(6、7)を適用した素子を単なるダイオード素子として用いてもよい。
図18は、本実施の形態の半導体装置(ダイオード素子)を示す要部断面図である。本実施の形態の半導体装置(ダイオード素子)は、基板(n-型ドリフト層1)の表面側に配置された、p型アノード領域20と、基板(n-型ドリフト層1)の裏面側に配置され、高濃度n型領域6および高濃度p型領域7よりなる高濃度pn接合部とを有する。高濃度n型領域6は、n-型ドリフト層1の裏面側に配置され、この高濃度n型領域6上には高濃度p型領域7が配置されている。
本実施の形態の半導体装置の製造方法について制限はないが、例えば、イオン注入技術を用いて、基板(n-型ドリフト層1)の表面に、p型アノード領域20を形成し、基板(n-型ドリフト層1)の裏面(カソード側)に、高濃度n型領域6および高濃度p型領域7を形成する。その後、基板の表面および裏面上に導電性膜を堆積することにより、アノード電極21およびカソード電極22を形成する。
実施の形態7(図18)においては、p型アノード領域20を、ほぼ単一のp型の不純物の濃度層としたが、このp型アノード領域をp型領域20Aおよびp-型領域23で構成してもよい。
図20は、本実施の形態の半導体装置を示す要部断面図である。本実施の形態の半導体装置(ダイオード素子)は、基板(n-型ドリフト層1)の表面側に配置された、p型アノード領域を構成するp型領域20Aおよびp-型領域23と、基板(n-型ドリフト層1)の裏面側に配置され、高濃度n型領域6および高濃度p型領域7よりなる高濃度pn接合部とを有する。高濃度n型領域6は、n-型ドリフト層1の裏面側に配置され、この高濃度n型領域6の裏面側には高濃度p型領域7が配置されている。
本実施の形態の半導体装置の製造方法について制限はないが、例えば、イオン注入技術を用いて、基板(n-型ドリフト層1)の表面に、p型領域20Aおよびp-型領域23を形成し、基板(n-型ドリフト層1)の裏面に、高濃度n型領域6および高濃度p型領域7を形成する。その後、基板の表面および裏面上に導電性膜を堆積することにより、アノード電極21およびカソード電極22を形成する。
上記実施の形態1~6で説明した半導体装置(ダイオード内蔵のIGBT)の適用箇所に制限はないが、例えば、ハイブリッド車などに使用される3相モータの駆動回路(インバータ回路、電力変換装置)に使用することができる。図21は、本実施の形態における3相モータの回路図を示す図である。601a~603aおよび601b~603bはフライホイールダイオード、701a~703aおよび701b~703bはIGBT、801a~803aおよび801b~803bはゲート回路、900は電源端子のうちのP端子、901は電源端子のうちのN端子、910、911、912は、それぞれU端子、V端子、W端子、950はモータ、960は、電源である。かかる3相モータにおいては、いわゆる“インバータ回路”によりモータ950を可変速制御することができる。
2 p型チャネル領域
3 ゲート絶縁膜
4 n型ソース領域
5 ゲート電極
6 高濃度n型領域
7 高濃度p型領域
8 エミッタ電極
9 コレクタ電極
10 p型ウエル
11 n型バッファ層
12 n型ホールバリア層
20 p型アノード領域
20A p型領域
21 アノード電極
22 カソード電極
23 p-型領域
601a~603a フライホイールダイオード
601b~603b フライホイールダイオード
701a~703a IGBT
701b~703b IGBT
801a~803a ゲート回路
801b~803b ゲート回路
900 電源端子(P端子)
901 電源端子(N端子)
910 U相(U端子)
911 V相(V端子)
912 W相(W端子)
950 モータ
960 電源
B n型バッファ層
C p型コレクタ層
D n型層、
I 第1象限
III 第3象限
IL 絶縁膜
Ic コレクタ電流
T 溝
Vce コレクタ電圧
Claims (20)
- 第1導電型の半導体層と、
前記半導体層の第1面側に、前記半導体層と接して配置された前記第1導電型と逆導電型である第2導電型の第1半導体領域と、
前記第1半導体領域を貫通し、前記半導体層に達するように設けられた溝内にゲート絶縁膜を介して設けられたゲート電極と、
前記第1半導体領域の前記第1面側に、前記溝に接するように設けられた前記第1導電型の第2半導体領域と、
前記半導体層の前記第1面側と逆側である第2面側に接して配置された前記第1導電型の第1高濃度半導体領域と、
前記第1高濃度半導体領域の前記第2面側に接して配置された前記第2導電型の第2高濃度半導体領域と、
を有し、
前記第1高濃度半導体領域と前記第2高濃度半導体領域との接合は、トンネル接合である半導体装置。 - 前記半導体層の第1面側に配置され、前記第2半導体領域と電気的に接続される第1電極と、
前記半導体層の第2面側に配置され、第2高濃度半導体領域と接するように配置された第2電極と、
を有する請求項1記載の半導体装置。 - 前記第1高濃度半導体領域と前記第2高濃度半導体領域の接合部における不純物濃度は、1×1019cm-3以上である請求項1記載の半導体装置。
- 前記第1高濃度半導体領域と前記第2高濃度半導体領域の接合部における不純物濃度は、3×1020cm-3以下である請求項3記載の半導体装置。
- 前記第1高濃度半導体領域の厚さは50nm以下である請求項1記載の半導体装置。
- 前記第2高濃度半導体領域の厚さは50nm以下である請求項1記載の半導体装置。
- 前記半導体層と第1高濃度半導体領域とのとの間に前記半導体層より不純物濃度が高い前記第1導電型の第3半導体領域を有する請求項1記載の半導体装置。
- 前記半導体層と前記第1半導体領域との間に前記半導体層より不純物濃度が高い前記第1導電型の第4半導体領域を有する請求項1記載の半導体装置。
- 第1導電型の半導体層と、
前記半導体層の第1面側の一部に前記半導体層と接して配置された前記第1導電型と逆導電型である第2導電型の第1半導体領域と、
前記第1半導体領域の前記第1面側の一部に前記第1半導体領域と接して設けられた前記第1導電型の第2半導体領域と、
前記第1半導体領域上にゲート絶縁膜を介して設けられたゲート電極と、
前記半導体層の前記第1面側の一部に前記半導体層と接し、前記第1半導体領域と離間して配置された前記第1導電型の第1高濃度半導体領域と、
前記第1高濃度半導体領域の前記第1面側の一部に第1高濃度半導体領域と接して設けられた第2高濃度半導体領域と、
を有し、
前記第1高濃度半導体領域と前記第2高濃度半導体領域との接合は、トンネル接合である半導体装置。 - 前記半導体層の第1面側に配置され、前記第2半導体領域と電気的に接続される第1電極と、
前記半導体層の第1面側に配置され、第2高濃度半導体領域と接するように配置された第2電極と、
を有する請求項9記載の半導体装置。 - 前記第1高濃度半導体領域と前記第2高濃度半導体領域の接合部における不純物濃度は、1×1019cm-3以上である請求項9記載の半導体装置。
- 前記第1高濃度半導体領域と前記第2高濃度半導体領域の接合部における不純物濃度は、3×1020cm-3以下である請求項11記載の半導体装置。
- 第1導電型の半導体層と、
前記半導体層の第1面側に前記半導体層と接して配置された前記第1導電型と逆導電型である第2導電型の第1半導体領域と、
前記半導体層の前記第1面側と逆側である第2面側に接して配置された前記第1導電型の第1高濃度半導体領域と、
前記第1高濃度半導体領域の前記第2面側に接して配置された前記第2導電型の第2高濃度半導体領域と、
を有し、
前記第1高濃度半導体領域と前記第2高濃度半導体領域との接合は、トンネル接合である半導体装置。 - 前記半導体層の第1面側に配置され、前記第1半導体領域と電気的に接続される第1電極と、
前記半導体層の第2面側に配置され、第2高濃度半導体領域と接するように配置された第2電極と、
を有する請求項13記載の半導体装置。 - 前記第1高濃度半導体領域と前記第2高濃度半導体領域の接合部における不純物濃度は、1×1019cm-3以上である請求項13記載の半導体装置。
- 前記第1高濃度半導体領域と前記第2高濃度半導体領域の接合部における不純物濃度は、3×1020cm-3以下である請求項15記載の半導体装置。
- 前記第2高濃度半導体領域の厚さは50nm以下である請求項13記載の半導体装置。
- 前記第1高濃度半導体領域の厚さは50nm以下である請求項13記載の半導体装置。
- 前記IGBTと前記ダイオードとが、並列であって、順方向が逆向きに接続された並列回路を有する電力変換装置であって、
前記IGBTと前記ダイオードとして、請求項1記載の半導体装置を有する電力変換装置。 - 前記IGBTと前記ダイオードとが、並列であって、順方向が逆向きに接続された並列回路を有する電力変換装置であって、
前記ダイオードとして、請求項13記載の半導体装置を有する電力変換装置。
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JP2015056482A (ja) * | 2013-09-11 | 2015-03-23 | 株式会社東芝 | 半導体装置 |
JPWO2015114787A1 (ja) * | 2014-01-31 | 2017-03-23 | 株式会社日立製作所 | 半導体素子の駆動装置およびそれを用いた電力変換装置 |
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DE112013006664B4 (de) * | 2013-02-13 | 2019-07-04 | Toyota Jidosha Kabushiki Kaisha | Halbleitereinrichtung |
DE102014118664B4 (de) * | 2014-12-15 | 2020-02-13 | Infineon Technologies Ag | Leistungshalbleitervorrichtung mit verbesserter Stabilität und Verfahren zur Herstellung derselben |
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US9349847B2 (en) | 2016-05-24 |
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