JPS61294870A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
JPS61294870A
JPS61294870A JP60135583A JP13558385A JPS61294870A JP S61294870 A JPS61294870 A JP S61294870A JP 60135583 A JP60135583 A JP 60135583A JP 13558385 A JP13558385 A JP 13558385A JP S61294870 A JPS61294870 A JP S61294870A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
oxide film
silicon layer
gate
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60135583A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0418711B2 (enExample
Inventor
Naotaka Sumihiro
住廣　直孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60135583A priority Critical patent/JPS61294870A/ja
Priority to US06/876,897 priority patent/US4812898A/en
Publication of JPS61294870A publication Critical patent/JPS61294870A/ja
Publication of JPH0418711B2 publication Critical patent/JPH0418711B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP60135583A 1985-06-21 1985-06-21 不揮発性半導体記憶装置 Granted JPS61294870A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60135583A JPS61294870A (ja) 1985-06-21 1985-06-21 不揮発性半導体記憶装置
US06/876,897 US4812898A (en) 1985-06-21 1986-06-20 Electronically programmable and erasable memory device having floating gate electrode with a unique distribution of impurity concentration

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60135583A JPS61294870A (ja) 1985-06-21 1985-06-21 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS61294870A true JPS61294870A (ja) 1986-12-25
JPH0418711B2 JPH0418711B2 (enExample) 1992-03-27

Family

ID=15155212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60135583A Granted JPS61294870A (ja) 1985-06-21 1985-06-21 不揮発性半導体記憶装置

Country Status (2)

Country Link
US (1) US4812898A (enExample)
JP (1) JPS61294870A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63248174A (ja) * 1987-04-03 1988-10-14 Mitsubishi Electric Corp 半導体記憶装置の製造方法
JPS63283070A (ja) * 1987-05-14 1988-11-18 Sanyo Electric Co Ltd 不揮発性メモリ素子の製造方法
JPH01117365A (ja) * 1987-10-30 1989-05-10 Matsushita Electron Corp 半導体記憶装置の製造方法
JPH01132169A (ja) * 1987-11-17 1989-05-24 Mitsubishi Electric Corp 半導体装置
JPH01289170A (ja) * 1988-05-16 1989-11-21 Toshiba Corp 不揮発性半導体記憶装置
JPH08264668A (ja) * 1995-03-22 1996-10-11 Nec Corp 不揮発性半導体記憶装置およびその製造方法
JP2015211103A (ja) * 2014-04-25 2015-11-24 株式会社デンソー 半導体装置およびその製造方法
CN116344611A (zh) * 2021-12-22 2023-06-27 高谷信一郎 场效型电晶体装置

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2633541B2 (ja) * 1987-01-07 1997-07-23 株式会社東芝 半導体メモリ装置の製造方法
US5252846A (en) * 1987-03-13 1993-10-12 Kabushiki Kaisha Toshiba Semiconductor memory device with an improved erroneous write characteristic and erasure characteristic
JPS63252481A (ja) * 1987-04-09 1988-10-19 Toshiba Corp 不揮発性半導体メモリ
US4920512A (en) * 1987-06-30 1990-04-24 Mitsubishi Denki Kabushiki Kaisha Non-volatile semiconductor memory capable of readily erasing data
JPH021988A (ja) * 1987-12-03 1990-01-08 Texas Instr Inc <Ti> 電気的にプログラム可能なメモリ・セル
FR2635408B1 (fr) * 1988-08-11 1992-04-10 Sgs Thomson Microelectronics Memoire de type eprom a haute densite d'integration
FR2635409B1 (fr) * 1988-08-11 1991-08-02 Sgs Thomson Microelectronics Memoire de type eprom a haute densite d'integration possedant un facteur de couplage eleve, et son procede de fabrication
US5017979A (en) * 1989-04-28 1991-05-21 Nippondenso Co., Ltd. EEPROM semiconductor memory device
US5063423A (en) * 1989-04-28 1991-11-05 Nippondenso Co., Ltd. Semiconductor memory device of a floating gate tunnel oxide type
US6373093B2 (en) * 1989-04-28 2002-04-16 Nippondenso Corporation Semiconductor memory device and method of manufacturing the same
US5355007A (en) * 1990-11-23 1994-10-11 Texas Instruments Incorporated Devices for non-volatile memory, systems and methods
JPH0777237B2 (ja) * 1993-01-04 1995-08-16 日本電気株式会社 半導体記憶装置及びその製造方法
JPH06260610A (ja) * 1993-03-02 1994-09-16 Toshiba Corp 半導体記憶装置及びその製造方法
JP4377676B2 (ja) * 2003-12-24 2009-12-02 株式会社東芝 半導体装置およびその製造方法
JP2013115329A (ja) * 2011-11-30 2013-06-10 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4328565A (en) * 1980-04-07 1982-05-04 Eliyahou Harari Non-volatile eprom with increased efficiency
US4435786A (en) * 1981-11-23 1984-03-06 Fairchild Camera And Instrument Corporation Self-refreshing memory cell
JPS5921072A (ja) * 1982-07-26 1984-02-02 Mitsubishi Electric Corp 半導体不揮発性記憶装置
JPS5921071A (ja) * 1982-07-26 1984-02-02 Mitsubishi Electric Corp 半導体不揮発性記憶装置
US4688078A (en) * 1982-09-30 1987-08-18 Ning Hseih Partially relaxable composite dielectric structure

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63248174A (ja) * 1987-04-03 1988-10-14 Mitsubishi Electric Corp 半導体記憶装置の製造方法
JPS63283070A (ja) * 1987-05-14 1988-11-18 Sanyo Electric Co Ltd 不揮発性メモリ素子の製造方法
JPH01117365A (ja) * 1987-10-30 1989-05-10 Matsushita Electron Corp 半導体記憶装置の製造方法
JPH01132169A (ja) * 1987-11-17 1989-05-24 Mitsubishi Electric Corp 半導体装置
JPH01289170A (ja) * 1988-05-16 1989-11-21 Toshiba Corp 不揮発性半導体記憶装置
JPH08264668A (ja) * 1995-03-22 1996-10-11 Nec Corp 不揮発性半導体記憶装置およびその製造方法
JP2015211103A (ja) * 2014-04-25 2015-11-24 株式会社デンソー 半導体装置およびその製造方法
CN116344611A (zh) * 2021-12-22 2023-06-27 高谷信一郎 场效型电晶体装置
JP2023093231A (ja) * 2021-12-22 2023-07-04 信一郎 高谷 電界効果型トランジスタ装置

Also Published As

Publication number Publication date
JPH0418711B2 (enExample) 1992-03-27
US4812898A (en) 1989-03-14

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