JPS6127177Y2 - - Google Patents
Info
- Publication number
- JPS6127177Y2 JPS6127177Y2 JP1979132753U JP13275379U JPS6127177Y2 JP S6127177 Y2 JPS6127177 Y2 JP S6127177Y2 JP 1979132753 U JP1979132753 U JP 1979132753U JP 13275379 U JP13275379 U JP 13275379U JP S6127177 Y2 JPS6127177 Y2 JP S6127177Y2
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- moisture
- layer
- psg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000005368 silicate glass Substances 0.000 claims description 3
- 239000005360 phosphosilicate glass Substances 0.000 claims description 2
- 238000002161 passivation Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979132753U JPS6127177Y2 (xx) | 1979-09-26 | 1979-09-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979132753U JPS6127177Y2 (xx) | 1979-09-26 | 1979-09-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5651349U JPS5651349U (xx) | 1981-05-07 |
| JPS6127177Y2 true JPS6127177Y2 (xx) | 1986-08-13 |
Family
ID=29364360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1979132753U Expired JPS6127177Y2 (xx) | 1979-09-26 | 1979-09-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6127177Y2 (xx) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5342391A (en) * | 1976-09-30 | 1978-04-17 | Standex Int Corp | Block for bundled assembly |
-
1979
- 1979-09-26 JP JP1979132753U patent/JPS6127177Y2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5342391A (en) * | 1976-09-30 | 1978-04-17 | Standex Int Corp | Block for bundled assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5651349U (xx) | 1981-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5786638A (en) | Semiconductor device with moisture impervious film | |
| JPH05291343A (ja) | 半導体装置 | |
| JPS6127177Y2 (xx) | ||
| JPS59110122A (ja) | 窒化膜を有する半導体集積回路装置 | |
| JPH03179778A (ja) | 薄膜半導体形成用絶縁基板 | |
| JPH05218015A (ja) | 半導体装置 | |
| JPS61247051A (ja) | 半導体装置の製造方法 | |
| JP3013628B2 (ja) | 半導体装置 | |
| JPH05234991A (ja) | 半導体装置 | |
| JP2537354B2 (ja) | 半導体イオンセンサ | |
| JP2715456B2 (ja) | 半導体装置 | |
| JP2695812B2 (ja) | 半導体装置 | |
| JPH0322567A (ja) | 半導体装置およびその製造方法 | |
| JPS61128546A (ja) | 半導体装置 | |
| JPH05226325A (ja) | 半導体装置 | |
| JP2853793B2 (ja) | メモリ素子の製造方法 | |
| JP2993039B2 (ja) | 能動層積層素子 | |
| JP3087702B2 (ja) | 半導体装置およびその製造方法 | |
| JPH03209823A (ja) | 樹脂封止型半導体装置 | |
| JP3186266B2 (ja) | 半導体装置 | |
| JPS6028247A (ja) | 半導体装置 | |
| JPS59161840A (ja) | 半導体集積回路装置 | |
| JPS62591B2 (xx) | ||
| JPH0565055B2 (xx) | ||
| JPS59211236A (ja) | 半導体装置 |