JPS61140164A - 半導体集積回路の製造方法 - Google Patents

半導体集積回路の製造方法

Info

Publication number
JPS61140164A
JPS61140164A JP59262567A JP26256784A JPS61140164A JP S61140164 A JPS61140164 A JP S61140164A JP 59262567 A JP59262567 A JP 59262567A JP 26256784 A JP26256784 A JP 26256784A JP S61140164 A JPS61140164 A JP S61140164A
Authority
JP
Japan
Prior art keywords
channel
drain
diffusion layer
output
withstand voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59262567A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0369184B2 (cg-RX-API-DMAC7.html
Inventor
Hiroshi Kamijo
上條　洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP59262567A priority Critical patent/JPS61140164A/ja
Publication of JPS61140164A publication Critical patent/JPS61140164A/ja
Publication of JPH0369184B2 publication Critical patent/JPH0369184B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
JP59262567A 1984-12-12 1984-12-12 半導体集積回路の製造方法 Granted JPS61140164A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59262567A JPS61140164A (ja) 1984-12-12 1984-12-12 半導体集積回路の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59262567A JPS61140164A (ja) 1984-12-12 1984-12-12 半導体集積回路の製造方法

Publications (2)

Publication Number Publication Date
JPS61140164A true JPS61140164A (ja) 1986-06-27
JPH0369184B2 JPH0369184B2 (cg-RX-API-DMAC7.html) 1991-10-31

Family

ID=17377592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59262567A Granted JPS61140164A (ja) 1984-12-12 1984-12-12 半導体集積回路の製造方法

Country Status (1)

Country Link
JP (1) JPS61140164A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6394669A (ja) * 1986-10-08 1988-04-25 Mitsubishi Electric Corp 半導体記憶装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6002829A (en) 1992-03-23 1999-12-14 Minnesota Mining And Manufacturing Company Luminaire device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52101984A (en) * 1976-02-23 1977-08-26 Sony Corp Preparation of semiconductor device
JPS5319773A (en) * 1976-08-06 1978-02-23 Rca Corp Ic device
JPS5467780A (en) * 1977-11-09 1979-05-31 Seiko Instr & Electronics Ltd High integration ic
JPS57120371A (en) * 1981-01-19 1982-07-27 Sanyo Electric Co Ltd Manufacture of complementary type mos semiconductor
JPS5947757A (ja) * 1982-09-10 1984-03-17 Hitachi Ltd 半導体集積回路装置とその製造法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52101984A (en) * 1976-02-23 1977-08-26 Sony Corp Preparation of semiconductor device
JPS5319773A (en) * 1976-08-06 1978-02-23 Rca Corp Ic device
JPS5467780A (en) * 1977-11-09 1979-05-31 Seiko Instr & Electronics Ltd High integration ic
JPS57120371A (en) * 1981-01-19 1982-07-27 Sanyo Electric Co Ltd Manufacture of complementary type mos semiconductor
JPS5947757A (ja) * 1982-09-10 1984-03-17 Hitachi Ltd 半導体集積回路装置とその製造法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6394669A (ja) * 1986-10-08 1988-04-25 Mitsubishi Electric Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPH0369184B2 (cg-RX-API-DMAC7.html) 1991-10-31

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