JPH0369184B2 - - Google Patents
Info
- Publication number
- JPH0369184B2 JPH0369184B2 JP59262567A JP26256784A JPH0369184B2 JP H0369184 B2 JPH0369184 B2 JP H0369184B2 JP 59262567 A JP59262567 A JP 59262567A JP 26256784 A JP26256784 A JP 26256784A JP H0369184 B2 JPH0369184 B2 JP H0369184B2
- Authority
- JP
- Japan
- Prior art keywords
- channel type
- channel
- diffusion layer
- drain
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59262567A JPS61140164A (ja) | 1984-12-12 | 1984-12-12 | 半導体集積回路の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59262567A JPS61140164A (ja) | 1984-12-12 | 1984-12-12 | 半導体集積回路の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61140164A JPS61140164A (ja) | 1986-06-27 |
| JPH0369184B2 true JPH0369184B2 (cg-RX-API-DMAC7.html) | 1991-10-31 |
Family
ID=17377592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59262567A Granted JPS61140164A (ja) | 1984-12-12 | 1984-12-12 | 半導体集積回路の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61140164A (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6993242B2 (en) | 1992-03-23 | 2006-01-31 | 3M Innovative Properties Company | Luminaire device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6394669A (ja) * | 1986-10-08 | 1988-04-25 | Mitsubishi Electric Corp | 半導体記憶装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5915189B2 (ja) * | 1976-02-23 | 1984-04-07 | ソニー株式会社 | 半導体装置の製造方法 |
| DE2733787A1 (de) * | 1976-08-06 | 1978-02-09 | Rca Corp | Komplementaersymmetrisches metall- oxid-halbleiterbauelement |
| JPS5467780A (en) * | 1977-11-09 | 1979-05-31 | Seiko Instr & Electronics Ltd | High integration ic |
| JPS57120371A (en) * | 1981-01-19 | 1982-07-27 | Sanyo Electric Co Ltd | Manufacture of complementary type mos semiconductor |
| JPS5947757A (ja) * | 1982-09-10 | 1984-03-17 | Hitachi Ltd | 半導体集積回路装置とその製造法 |
-
1984
- 1984-12-12 JP JP59262567A patent/JPS61140164A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6993242B2 (en) | 1992-03-23 | 2006-01-31 | 3M Innovative Properties Company | Luminaire device |
| US7209628B2 (en) | 1992-03-23 | 2007-04-24 | 3M Innovative Properties Company | Luminaire device |
| US7418188B2 (en) | 1992-03-23 | 2008-08-26 | 3M Innovative Properties Company | Luminaire device |
| US7424197B2 (en) | 1992-03-23 | 2008-09-09 | 3M Innovative Properties Company | Luminaire device |
| US7587117B2 (en) | 1992-03-23 | 2009-09-08 | 3M Innovative Properties Company | Luminaire device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61140164A (ja) | 1986-06-27 |
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